• Title/Summary/Keyword: Interface singularity

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Estimation of Thermal Stresses Induced in Polymeric Thin Film Using Boundary Element Methods

  • Lee, Sang-Soon
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.27-33
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    • 2002
  • The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.

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Boundary element analysis of singular thermal stresses in a unidirectional laminate

  • Lee, Sang Soon;Kim, Beom Shig
    • Structural Engineering and Mechanics
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    • v.5 no.6
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    • pp.705-713
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    • 1997
  • The residual thermal stresses at the interface corner between the elastic fiber and the viscoelastic matrix of a two-dimensional unidirectional laminate due to cooling from cure temperature down to room temperature were studied. The matrix material was assumed to be thermorheologically simple. The time-domain boundary element method was employed to investigate the nature of stresses on the interface. Numerical results show that very large stress gradients are present at the interface corner and this stress singularity might lead to local yielding or fiber-matrix debonding.

Singular Residual Stresses at Interface of Compound Cylinders

  • Lee, S.S.;Kim, T.H.;Kim, J.G.;Park, K.W.;Hwang, J.K.
    • Proceedings of the Korean Nuclear Society Conference
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    • 1996.05c
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    • pp.305-310
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    • 1996
  • This paper concerns the cladding residual stresses in a reactor vessel induced during cooling from the manufacturing temperature down to room temperature Finite element results show that very large stress gradients are present at the interface corner and such stress singularity might lead to local yielding or cladding-base metal debonding.

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Analysis of Thermal Stresses Induced in Polymeric Thin Layer Due to Temperature Change (온도변화로 인해 고분자 박막에 발생하는 열응력 해석)

  • 이상순
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2002.10a
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    • pp.146-152
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    • 2002
  • In this study, the singular thermal stresses induced during cooling down from high temperature to room temperature have been analyzed for the viscoelastic thin layer. The time domain boundary element method has been employed to investigate the behavor of stresses for the whole interface. Within the context of a linear viscoelastic theory, a stress singularity exists at the point where the interface between the elastic substrate and the viscoelastic thin layer intersects the free surface.

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COMPUTATION AND ANALYSIS OF MATHEMATICAL MODEL FOR MOVING FREE BOUNDARY FLOWS

  • Sohn, Sung-Ik
    • Journal of the Korean Mathematical Society
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    • v.37 no.5
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    • pp.779-791
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    • 2000
  • The nonlinear stage of the evolution of free boundary between a light fluid and a heavy fluid driven by an external force is studied by a potential flow model with a source singlarity. The potential flow model is applied to a bubble and spije evolution for constantly accelerated interface (Rayleigh-Taylor instability) and impulsively accelerated interface (Richtmyer-Meshkow instability). The numerical results of the model show that, in constantly accelerated intergace, bubble grows with constant velocity and the spike falls with gravitational acceleration at later times, while the velocity of the bubble in impulsively accelerated interface decay to zero asymp flow model for the bubble and spike for constantly accelerated interface and impulsively accelerated interface.

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Effect Evaluation of Hole Defects in Adhesive on SIF of Interface Crack (접착층내 결함이 계면균열의 응력확대계수에 미치는 영향 평가)

  • Hyun, Cheol-Seung;Heo, Sung-Pil;Yang, Won-Ho;Ryu, Myung-Hae
    • Proceedings of the KSME Conference
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    • 2001.11a
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    • pp.299-303
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    • 2001
  • Adherend-adhesive interface failure will occur on a macroscale when surface preparation or material quality are poor. It is well known that the stress singularity occurs at the edges of interface between the adhernds and the adhesive, and that crack will initiate from these positions. Also if bubbles are created and remained in the adhesive layer during the bonding process, the stress concentrates around these hole defects. In this paper, the effects of the hole defects on the SIF of interface crack were examined. From results, SIF increased with the hole defects near the interface crack and increased with an decreae in the upper adherend thickness, an increase in the center adhesive thickness.

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Estimation of a mixed-mode cohesive law for an interface crack between dissimilar materials

  • Song, Sung-Il;Kim, Kwang-Soo;Kim, Hyun-Gyu
    • Multiscale and Multiphysics Mechanics
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    • v.1 no.1
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    • pp.35-51
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    • 2016
  • In this paper, a mixed-mode cohesive law for an interface crack between epoxy and TR (transparent thermoplastic) resin is inversely estimated by the field projection method using numerical solutions and experimentally measured displacements. Displacements in a region far away from the crack tip are measured by digital image correlation technique. An inverse analysis, the field projection method formulated from the interaction J- and M-integrals with numerical auxiliary fields, is carried out to estimate a mixed-mode cohesive law for an interface crack between dissimilar materials. In the present approach, nonlinear deformations and damage near the crack tip are converted into the relationships of tractions and separations on crack surfaces behind the crack tip. The phase angle of mixed-mode singularities of the interface crack is also obtained from measured displacements in this study.

A STUDY OF SPECTRAL ELEMENT METHOD FOR ELLIPTIC INTERFACE PROBLEMS WITH NONSMOOTH SOLUTIONS IN ℝ2

  • KUMAR, N. KISHORE;BISWAS, PANKAJ;REDDY, B. SESHADRI
    • Journal of applied mathematics & informatics
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    • v.38 no.3_4
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    • pp.311-334
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    • 2020
  • The solution of the elliptic partial differential equation has interface singularity at the points which are either the intersections of interfaces or the intersections of interfaces with the boundary of the domain. The singularities that arises in the elliptic interface problems are very complex. In this article we propose an exponentially accurate nonconforming spectral element method for these problems based on [7, 18]. A geometric mesh is used in the neighbourhood of the singularities and the auxiliary map of the form z = ln ξ is introduced to remove the singularities. The method is essentially a least-squares method and the solution can be obtained by solving the normal equations using the preconditioned conjugate gradient method (PCGM) without computing the mass and stiffness matrices. Numerical examples are presented to show the exponential accuracy of the method.

Boundary Element Analysis for Edge Cracks at the Bonding Interface of Semiconductor Chip (반도체 칩 접착계면의 모서리 균열에 대한 경계요소 해석)

  • 이상순
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.3
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    • pp.25-30
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    • 2001
  • The stress intensity factors for edge cracks located at the bonding interface between the semiconductor chip and the adhesive layer subjected to a uniform transverse tensile strain are investigated. Such cracks might be generated due to a stress singularity in the vicinity of the free surface. The boundary element method (BEM) is employed to investigate the behavior of interface stresses. The amplitude of complex stress intensity factor depends on the crack length, but it has a constant value at large crack lengths. The rapid propagation of interface crack is expected if the transverse tensile strain reaches a critical value.

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Viscoelastic Analysis for Behavior of Edge Cracks at the Bonding Interface of Semiconductor Chip (반도체 칩 접착 계면에 존재하는 모서리 균열 거동에 대한 점탄성 해석)

  • 이상순
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.14 no.3
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    • pp.309-315
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    • 2001
  • The Stress intensity factors for edge cracks located at the bonding interface between the elastic semiconductor chip and the viscoelastic adhesive layer have been investigated. Such cracks might be generated due to stress singularity in the vicinity of the free surface. The domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The overall stress intensity factor for the case of a small interfacial edge crack has been computed. The magnitude of stress intensity factors decrease with time due to viscoelastic relaxation.

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