• Journal of Adhesion and Interface
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• v.9 no.4
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• pp.30-33
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• 2008

Two polymeric interfaces with single component homo-polymers were prepared to control the orientation of block copolymer thin-film nanostructures. Poly(4-acetoxy styrene) (OH-PAS) and poly(4-methoxy styrene) (OH-PMS) which have the average chemical composition of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) were precisely synthesized through nitroxide-mediated radical polymerization. After dehydration reactions between above polymers and SiOx layers of silicon wafers, the polymer-modified interface induced partial (30%) vertical orientation of PS-b-PMMA thin film in the case of OH-PMS and wholly parallel orientation in the case of OH-PAS. Chemical compositions of polymeric interface layers are regarded as the key parameter to control the orientation of nanostructures of block copolymer thin film.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.57-77
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• 1998

Heteroepitaxial $Y_2O_3$ films were grown on a Si(111) substrate by ionized cluster beam deposition(ICBD) in ultra high vacuum, and its qualities such as crystllitnity, film stress, and morphological characteristics were investigated using the various measurement methods. The crystallinity was investigated by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Interface crystallinity was also examined by Rutherford backscattering spectroscopy(RBS) channeling, transmission electron microscopy(TEM). The stress of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were investigated by atomic force microscopy (AFM) and x-ray scattering method. Comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface reaction between the yttrium metal and SiO2 layer and by ion beam characteristic such as shallow implantation, so that they influenced the film qualities. The film quality was dominantly depended on the characteristic temperature range. In the temperature range from $500^{\circ}C$ to $600^{\circ}C$, the crystallinity was mainly improved and the surface roughness was drastically decreased. On the other hand, in the temperature range from $600^{\circ}C$ to $700^{\circ}C$, the compressive stress and film density were dominantly increased, and the island size was more decreased. Also the surface morphological shape was transformed from elliptical shape to triangular. The film stress existed dominantly at the interface region due to the defects generation.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.637-644
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• 2005

In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive $LaSrGa_3O_7$ phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as $La_2Zr_2O_7,\;Sr_2ZrO_4,\;LaSrGaO_4\;and\;LaSrGa_3O_7$. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.172-177
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• 1999

Graphite and carbonaceous materials showed an excellent capability as a negative electrode in Li-ion batteries because Li-ion can be intercalated and de-intercalated reversibly within most carbonaceous materials of layered structure. Also, the electrochemical potential of Li-intercalated carbon anode is almost identical with that of Li metal. In the present study, mesocarbon microbeads(MCMB) were used as anode electrode and its properties of charge/discharge and interfacial reaction with electrolyte were studied by Potentiostat/Galvanostat test, FT-IR analysis, XRD and SEM. The passivation film of solid-state was formed as the interface between electrode and electrolyte as the cell reaction began and, once formed, became thicker with repeated charge/discharge process. Also, the relationship between the passivation film formed at the electrode interface and storage capacity was discussed.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.324-330
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• 1999

$Si_3N_4$-$TiB_2$ with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ additives was hot pressed in a flowing $N_2$ environment with varying $TiB_2$ content from 10 to 50 vol%. Variations of mechanical (hardness, fracture toughness, and flexual strength), and tribological properties as a function of $TiB_2$ content were investigated. As the content of $TiB_2$ increased, relative density decreased due to the chemical reaction of $TiB_2$in $N_2$ environment. The reduction of density causes mechanical properties to be degraded with an increase of $TiB_2$ in $Si_3N_4$. Tribological properties were dependent of microstructure as well as mechanical properties, however, they were degraded strongly by the chemical reaction of $Si_3N_4$-$TiB_2$ during hot pressing in $N_2$ environment. SEM and TEM observations, and X-ray diffraction analysis that the chemical reaction products at the interface are TiCN, Si, and $SiO_2$. Also, the comparison of XRD patterns of the $Si_3N_4$-40 vol% $TiB_2$ composites hot pressed at $1,750^{\circ}C$ for 1 hour between in $N_2$ and in Ar gas was made. The XRD peaks of Si and $SiO_2$ were not found in Ar, but still a weak peak of TiCN was presented.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.47 no.1
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• pp.116-122
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• 2010

As the importance of HCI(Human-Computer Interface) caused by dramatically developed computer technology is getting high, the requirement for the design of human friendly systems is also getting high. First of all, the personality and Emotional factor should be considered for implementing more human friendly systems. Many studies on Knowledge, Emotion and personality have been made, but the combined methods connecting these three factors is not so many investigated yet. It is known that memorizing process includes not only knowledge but also the emotion and the emotion state has much effects on the process of reasoning and decision making step. Accordingly, for implementing more human friendly efficient sophisticated intelligent system, the system considering these three factors should be modeled and designed. In this paper, knowledge-emotion reaction model was designed. Five types are defined for representing the personality and emotion reaction mechanism calculating emotion vector based on the extracted Thought threads by Type matching selection was proposed. This system is applied to the virtual memory and its emotional reactions are simulated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Journal of Adhesion and Interface
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• v.15 no.2
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• pp.69-76
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• 2014

Two kinds of epoxy-functionalized alkoxysilane (EAS) compounds (EAS-MS and EAS-ES) were successfully synthesized through the reaction between epoxy resin (YD-128) and aminopropyl trimethoxysilane (APTMS) or aminopropyl triethoxysilane (APTES). By the hydrolysis-polycondensation reaction of EAS compounds with 3-Glycidyloxypropyl trimethoxysilane (GPTMS) and Tetraethyl orthosilicate (TEOS), silica/epoxy nanohybrids could be prepared at various compositions of EAS to GPTMS/TEOS. Prepared nanohybrids were yellow transparent and miscible with various organic solvents. By the reaction silica/epoxy nanohybrids with curing agents (TETA or acrylic acid), cured hybrids films could be obtained. These cured films showed higher thermal stability and mechanical property compared to cured neat epoxy resin. TEM and AFM images showed formation of nano-sized silica nanoparticles within cured hybrid films.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.465-473
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• 1998

The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.

• Aerospace Engineering and Technology
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• v.5 no.2
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• pp.188-194
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• 2006

This paper deals with the development of Engineering Model for the TCU( Thruster Control Unit) and simulation system of the reaction control system using cold gas. TCU communicates with TLM(Telemetry) and ground control console so that it transmits monitoring data of pressures and temperatures for reaction control system. The cpu/communication board performs MIL-STD-1553B communication, RS-422 communication, data input/output processing and program loading to EEPROM. We applied Intel 80386DX Microprocessor, 256Kbytes EEPROM and 256Kbytes SRAM for program storage and execution. Also, we developed the direct access interface circuit to EEPROM and simulation system for TCU.