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http://dx.doi.org/10.4191/KCERS.2005.42.9.637

Introduction of a Buffering Layer for the Interfacial Stability of LSGM-Based SOFCs  

Kim, Kwang-Nyeon (Materials Division, Korea Institute of Science and Technology, School of Advanced Materials Engineering, Yonsei University)
Moon, Jooho (School of Advanced Materials Engineering, Yonsei University)
Son, Ji-Won (Materials Division, Korea Institute of Science and Technology)
Kim, Joosun (Materials Division, Korea Institute of Science and Technology)
Lee, Hae-Weon (Materials Division, Korea Institute of Science and Technology)
Lee, Jong-Ho (Materials Division, Korea Institute of Science and Technology)
Kim, Byung-Kook (Materials Division, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.42, no.9, 2005 , pp. 637-644 More about this Journal
Abstract
In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive $LaSrGa_3O_7$ phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as $La_2Zr_2O_7,\;Sr_2ZrO_4,\;LaSrGaO_4\;and\;LaSrGa_3O_7$. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.
Keywords
SOFC; LSGM; GDC; ScSZ; Buffering layer; Interfacial reaction;
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Times Cited By KSCI : 1  (Citation Analysis)
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