• 한국항공우주학회지
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• 제41권8호
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• pp.597-604
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• 2013

본 논문에서는 열분해 및 삭마 환경의 복합재 구조물에 대한 열기계적 연계 해석을 수행하였다. 열분해 과정의 재료 밀도 감소, 기공 가스 확산, 흡열 반응 에너지와 삭마 과정에서의 표면 침식 효과 등을 고려하였다. 상용 유한요소 코드에 교차 연계 알고리듬을 적용하여 완전 연계된 열 해석 및 구조 해석 인터페이스를 구성하였다. 수치 실험을 통해서 탄소/페놀릭 복합재료의 기본적인 열분해 및 삭마 특성을 분석하였다. 특히, 화학적 및 기계적 삭마에 영향을 미치는 주요 인자에 따른 표면 침식량 등을 비교하였다. 또한, 열분해 과정의 수축 또는 팽창 변형도가 재료의 열기계적 거동에 미치는 영향도 검토하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.263-263
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• 2013

This work examines the dynamic properties of ice surfaces in vacuum for the temperature range of 140~180 K, which extends over the onset temperatures for ice sublimation and the phase transition from amorphous to crystallization ice. In particular, the study focuses on the transport processes of excess protons and chloride ions in ice and their segregative behavior to the ice surface. These phenomena were studied by conducting experiments with a relatively thick (~100 BL) ice film constructed with a bottom $H_2O$ layer and an upper $D_2O$ layer, with excess hydronium and chloride ions trapped at the $H_2O$/$D_2O$ interface as they were generated by the ionization of hydrogen chloride. The migration of protons, chloride ions, and water molecules to the ice film surface and their H/D exchange reactions were measured as a function of temperature using the methods of low energy sputtering (LES) and Cs+ reactive ion scattering (RIS). Temperature programmed desorption (TPD) experiments monitored the desorption of water and hydrogen chloride from the surface. Our observations indicated that both hydronium and chloride ions migrated from the interfacial layer to segregate to the surface at high temperature. Hydrogen chloride gas desorbs via recombination reaction of hydronium and chloride ions floating on the surface. Surface segregation of these species is driven by thermodynamic potential gradient present near the ice surface, whereas in the bulk, their transport is facilitated by thermal diffusion process. The finding suggests that chlorine activation reactions of hydrogen chloride for polar stratospheric ice particles occur at the surface of ice within a depth of at most a few molecular layers, rather than in the bulk phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.130-131
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• 2013

Nanostructured oxides are widely used in heterogeneous catalysis where their catalytic properties are closely associated with the size and morphology at nanometer level. The effect of particle size has been well decumented in the past two decades, but the shape of the nanoparticles has rarely been concerned. Here we illustrate that the redox and acidic-basic properties of oxides are largely dependent on their shapes by taking $Co_3O_4$, $Fe_2O_3$, $CeO_2$ and $La_2O_3$ nanorods as typical examples. The catalytic activities of these rod-shaped oxides are mainly governed by the nature of the exposed crystal planes. For instance, the predominant presence of {110} planes which are rich in active $Co^{3+}$ on $Co_3O_4$ nanorods led to a much higher activity for CO oxidation than the nanoparticles that mainly exposed the {111} planes. The simultaneous exposure of iron and oxygen ions on the surface of $Fe_2O_3$ nanorods have significantly enhanced the adsorption and activation of NO and thereby promoted the efficiency of DeNOx process. Moreover, the exposed surface planes of these rod-shaped oxides mediated the reaction performance of the integrated metal-oxide catalysts. Au/$CeO_2$ catalysts exhibited outstanding stability under water-gas shift conditions owing to the strong bonding of gold particle on the $CeO_2$ nanorods where the formed gold-ceria interface was resistant towards sintering. Cu nanoparticles dispersed on $La_2O_3$ nanorods efficiently catalyzed transfer dehydrogenation of primary aliphatic alcohols based on the uniue role of the exposed {110} planes on the support. Morphology control at nanometer level allows preferential exposure of the catalytically active sites, providing a new stragegy for the design of highly efficient nanostructured catalysts.

• 한국주조공학회지
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• 제8권3호
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• pp.287-295
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• 1988

The experiment was carried out for the purpose of studying the carburization of pure iron ingot and sintered iron powder by solid carbon in the atmosphere of CO gas. The volocity of carburization was estimaed by the diffusion coefficient D calculated by carburization equation. The results obtained were as follow: 1. The higher the carburization temperature, carburization depth and carbon concentration were increased, and the melting zone which had $2.8{\sim}3.4%C$ at the $3{\sim}4mm$ from interface of carburization was formed at $1300^{\circ}C$. 2. The main carburization mechanism of pure iron ingot and the sintered iron powder were proceeded by CO gas up to $1100^{\circ}C$, solid carbon over than $1300^{\circ}C$, respectively. 3. The main carburization mechanism of pure iron ingot at $1200^{\circ}C$ was proceeded by solid carbon, and sintered iron powder was proceeded bs CO gas, however, in case the reaction time, the carburization was proceeded by solid carbon over than 5hrs. 4. The diffusion coefficient D of carbon were $0.559{\times}10^{-6}cm^2.sec^{-1}$ at $1100^{\circ}C$, $0.237{\times}10^{-6}cm^2.sec^{-1}$ at $1200^{\circ}C$, $0.087{\times}10^{-6}cm^2.sec^{-1}$ at $1300^{\circ}C$, in case of pure iron ingot carburized. 5. The diffusion coefficient D of carbon were $0.124\;cm^2.sec^{-1}$ at $1100^{\circ}C$, $0.102\;cm^2.sec^{-1}$ at $1200^{\circ}C$, $0.480\;{\times}10^{-6}cm^2.sec^{-1}$ at $1300^{\circ}C$, in the case of sintered iron carburized at the pressuring $4ton\;/\;cm^2$.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.478-486
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• 1995

Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

• 한국재료학회지
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• 제13권7호
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• 한국결정성장학회지
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• 제11권3호
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• pp.127-131
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• 2001

산화물계의 액상소결시 액상량을 변수로 하여 입자형성이 입자성장 거동에 미치는 영향을 고찰하였다. 산화물계 모델로 구형입자의 경우는 MgO$CaMgSiO_{4}$계를 선택하였으며, 각진입자의 경우는 $Al_{2}O_{3}$/ $CaAl_{2}Si_{2}O_{8}$계를 선택하였다. 구형입자인 MgO의 경우 액상량 증가에 따라 입자크기가 감소하였으나,각진입자인 $Al_{2}O_{3}$ 입자의 경우는 계면지배과정에 의해 성장하는 반면, 거친 고상/액상계면을 지닐 것으로 예상되는 구형 MgO입자의 경우는 확산지배과정에 의해 성장하였다.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.87-93
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• 2005

Au 층의 두께를 $0.1{\~}0.7{\mu}m$로 변화시킨 $0.1{\mu}m$ Ti/3 ${\mu}m$ Cu/Au UBM 상에서 48Sn-52In 솔더를 $150-250^{\circ}C$의 온도 범위에서 리플로우시 UBM/솔더 반응에 의한 금속간화합물의 형성거동을 분석하였다. 또한 Ti/Cu/Au UBM의 Au 두께 및 리플로우 온도에 따른 볼 전단강도와 전단에너지를 분석하였다. $150^{\circ}C$와 $200^{\circ}C$에서 리플로우 시에는 UBM/솔더 계면에 $Cu_6(Sn,In)_5$와 $AuIn_2$ 금속간 화합물이 형성되어 있으나, $250^{\circ}C$에서 리플로우 시에는 솔더 반응이 크게 증가하여 UBM이 대부분 소모되었다. 볼 전단강도는 UBM/솔더 반응과 일치하지 않는 결과를 나타내었으나, 전단 에너지는 UBM/솔더 반응과 잘 일치하는 변화 거동을 나타내었다.

• 마이크로전자및패키징학회지
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• 제14권4호
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• pp.71-77
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• 2007

본 연구에서는 리플로우 횟수를 달리하여 Sn-37Pb, Sn-3.5Ag와 Sn-3.5Ag-0.75Cu (all wt.%) BGA 솔더 접합부들을 OSP가 코팅된 Cu 패드 상에 형성시킨 후, 기계적 전기적 특성을 연구하였다. 주사전자현미경 분석 결과, 접합 계면에 생성된 $Cu_6Sn_5$ 금속간화합물 층의 두께는 리플로우 횟수가 증가함에 따라 증가하였다. Sn-Pb와 Sn-Ag-Cu 솔더 접합부의 경우, 3회 리플로우 후 최대 전단 강도를 나타내었으며, Sn-Ag 솔더 접합부의 경우 4회 리플로우 후 최대 전단 강도를 나타내었다. 이후 리플로우 횟수가 10회까지 증가함에 따라 전단 강도는 점차 감소하였다. 리플로우 횟수가 증가함에 따라 전기적 특성은 점차 감소하였다.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.