• 한국생산제조학회지
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• 제20권3호
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• pp.284-291
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• 2011

Numerical experiments on biological interfacial layer, DEJ by finite element software ABAQUS have been conducted to study its fracture behavior including crack bridging / arresting characteristics in the model. Crack growth simulation has been carried out by numerical tool, XFEM, devoted to study cracks and discontinuities. The fracture toughness of DEJ has been estimated before and after crack bridging. The implications of bridging in numerical study of fracture behavior of DEJ-like biological interface have been discussed. It has been observed that the results provided by the numerical studies without proper accommodation of bridging phenomenon can mislead. This study can be helpful for understanding the DEJ-like biological interface in terms of its fracture toughness, an important material characteristics. This property of the material is an important measure that has to be taken care during design and manufacturing processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.9-12
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• 2000

Insulators for high-voltage and large-power should be endured mechanically the weight of mold bushing itself and the force of pushed from contact with circuit breaker and conductor. But dielectric breakdown could be occurred result from the external circumstances and internal factors such as chemical reaction, partial discharge, change of temperature and the relation of temperature-time in process of casting. Therefore, to get rid of external and internal factors of dielectric breakdown. Furthermore, to prevent the internal cracks, void, cavity which resulted from the contraction originated on the interface between copper and epoxy resin, formed semi-conductive layer with partially carbon painted on copper bar. The PD properties and the insulation qualities of epoxy molded insulators were improved by roles of cushions for the direction of diameter and natural sliding effects as like separated from conductor for the direction of length.

• 한국재료학회지
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• 제22권3호
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• pp.123-129
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• 2012

The microstructures and mechanical properties of friction stir welded lap joints of Inconel 600 and SS 400 were evaluated; friction stir welding was carried out at a tool rotation speed of 200 rpm and welding speed of 100 mm/min. Electron back-scattering diffraction and transmission electron microscopy were introduced to analyze the grain boundary characteristics and the precipitates, respectively. Application of friction stir welding was notably effective at reducing the grain size of the stir zone. As a result, the reduced average grain size of Inconel 600 ranged from $20{\mu}m$ in the base material to $8.5{\mu}m$ in the stir zone. The joint interface between Inconel 600 and SS 400 showed a sound weld without voids and cracks, and MC carbides with a size of around 50 nm were partially formed at the Inconel 600 area of lap joint interface. However, the intermetallic compounds that lead to mechanical property degradation of the welds were not formed at the joint interface. Also, a hook, along the Inconel 600 alloy from SS 400, was formed at the advancing side, which directly brought about an increase in the peel strength. In this study, we systematically discussed the evolution of microstructures and mechanical properties of the friction stir lap joint between Inconel 600 and SS 400.

• 한국추진공학회지
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• 제12권2호
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• pp.40-47
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• 2008

초음파를 이용한 추진기관의 접착 계면 검사는 결함 검출 능력과 경제성이 우수하다고 알려져 있다. 하지만, 추진기관의 접착 구조는 다중 계면이므로 송신 펄스와 수신 펄스의 시간 간격이 짧아서 반사 신호의 분리가 어렵기 때문에 초음파의 신호 분석에는 많은 시간과 노력이 소요된다. 이런 이유로 추진기관의 초음파시험은 연소관과 내열재 사이의 미접착 결함과 같이 극히 제한된 영역에 대해서만 자동화 시스템으로 수행하고 있다. 본 논문에서는 기존의 초음파시험으로 검출이 불가능했던 라이너와 추진제 미접착 결함을 초음파의 공진 현상과 램파 특성을 이용하여 검출하는 새로운 기법에 대해 기술하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권12호
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.859-863
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• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제29회 추계학술대회논문집
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• pp.55-59
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• 2007

초음파를 이용한 추진기관의 접착 계면 검사는 결함 검출 능력과 경제성이 우수하다고 알려져 있다. 하지만, 추진기관의 접착 구조는 다중 계면이므로 송신 펄스와 수신 펄스의 시간 간격이 짧아서 반사 신호의 분리가 어렵기 때문에 초음파의 신호 분석에는 많은 시간과 노력이 소요된다. 이런 이유로 추진기관의 초음파시험은 연소관과 내열재 사이의 미접착 결함과 같이 극히 제한된 영역에 대해서만 자동화 시스템으로 수행하고 있다. 본 논문에서는 기존의 초음파시험으로 검출이 불가능했던 라이너와 추진제 미접착 결함을 초음파의 공진 현상과 램파 특성을 이용하여 검출하는 새로운 기법에 대해 기술하였다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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• pp.197-203
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• 2004

A full finite element (FE)-based approach is presented for the precision analysis of the strip profile in flat rolling. Basic FE models for the analysis of the mechanical behavior of the strip and of the rolls are described in detail. Also described is an iterative strategy for a rigorous treatment of the mechanical contact occurring at the roll-strip interface and at the roll-roll interface. Then, presented is an integrated FE process model for the coupled analysis of the mechanical behavior of the strip, work roll, and backup roll in four-high mill. A series of process simulation are conducted and the results are compared with the measurements made in hot and cold rolling experiments.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1993년도 추계학술강연 및 발표대회강연 및 발표논문 초록집
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• pp.3-3
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• 1993

In mechanical testing of W-Ni-Pe heavy alloys, the cracks nucleate at W/W interface and propagate through W/ Imatrix interface or through matrix phase together with the cleavage of W grains. The mechanical properties can therefore be improved by control of the interfacial strength and area. In this presentation, some experimental result and techniques on this subject will be reviewed and discussed. The hydrogen embrittlement caused by the hydrogen segregation at interfaces during sintering in an hydrogen atmosphere can be removed by an heat-treattnent in vacuum or in an inert atmosphere. The heat-treatment condition can be estimated by using a diffusion equation for a cylindrical shape. The mechanical properties, in particular the impact property, are degraded by the segregation of non-metallic impurities, such as Sand P. The degradation can be prevented by adding a fourth element, such as La or Ca, active with the non-metallic impurities. The cyclic heat-treatment at usual heat-treattnent tempemture causes the penetration of matrix between W/W grain boundaries and results in remarkable increase in impact energy. This is due to an increase in the area of ductile failure during the impact test. The instability of W/matrix interface casued by addition of Mo or Re can be controlled by using W powders of different size. The increase in the interfacial area in found to be related to the presence of non-equilibrium pure W gmins among W(Mo or Re) solid solution gmins.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.