• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1997년도 추계학술대회
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• pp.161-163
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• 1997

In this paper, a two-dimensional electron beam dose calculational algorithm implented for use in a two-dimensional radiation therapy planning system is described. The 2-D electron beam calculations have been in use clinically for a few decades. Our algorithm uses Age-diffusion model based int the Boltzman Transport Equation. Our implementation provides convenient user interface associated with electron beam therapy planning and displays radiation dose distribution according to different electron energy on patient images.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• 한국진공학회지
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• 제5권3호
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• pp.218-222
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• 1996

STrained layers and strain depth profile of high dose As ion implanted (100) si wafer annealed at various temperatures have been investigated by means of X-ray double crystal diffractometry (X-ray DCD). The results obtained by x-ray rocking curve analysis showed a defect layer at the original amorphous /crystalline interface of 1400$\AA$ depth. In addition arsenic ion concentrtion profiles and defect distributions in depth were obtained by the SIMS and TRIM -code simulation . the positive strain depth profile determined from the rocking curve analysis were only presented under 0.14 $\mu$m from the surface for samples ananelaed at $600^{\circ}C$. The results was shown that the thickness of amprphous layer is 0.14 $\mu$m indirectry, and it was good agreement with the TRIM -Code simulation. Additionally, it could be thought that the positive strain have been affected residual intersitial atoms under the amorphous/crystalline interface formed by ion implantation.

• 제어로봇시스템학회논문지
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• 제8권2호
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• pp.136-141
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• 2002

The electrical characteristics of solid state devices such as BJT(Bipolar Junction Transistor) and MOSFET, etc, are altered by impinging nuclear radiation and temperature in the space environment. This phenomenon is well known and has been studied extensively since the early 1960's when satellites were first being designed and used in the United States. However, the studies and the developments of radiation hardening technologies for the electronic components at the industrial fields in our country has not been popular so far. The worst case design technology in the electrical circuit is required for the appropriate operation of solid state devices in the space environment. In this paper, the interface circuit used in KOMPSAT(Korea Multipurpose Satellite), which is now being operated since the one was launched in 1999, is optimally designed to accomodate the worst case design and radiation effect.

• 전기전자학회논문지
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• 제27권3호
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• pp.303-307
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• 2023

본 논문은 Buried Channel Array Transistor(BCAT) 소자의 Oxide 내부에 Total Ionizing Dose(TID) effects으로 인한 Electron-Hole Pair의 생성이 유도되어, Oxide 계면의 Hole Trap Charge의 증가에 따른 누설전류의 증가와 문턱 전압의 변화를 기존에 제안한 Partial Isolation Buried Channel Array Transistor(Pi-BCAT)구조와 비교 시뮬레이션 하여, Pi-BCAT 소자의 증가한 Oxide 면적과 상관없이 변화한 누설전류와 문턱 전압에서의 특성이 비대칭 도핑 BCAT 구조보다 우수함을 보여 준다.

• 대한방사선기술학회지:방사선기술과학
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• 제19권1호
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• pp.81-87
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• 1996

When high energy photon beam is incident upon an air cavity interface the effect of ionization build-up observed. This phenomenon is resulting from the surface layers of the lesions are significant deficiency of electrons reaching the layers because of the replacement of solid scattering material by the air cavity, that is lack of electronic equilibrium. Measurement have been made in an acrylic phantom with a parallel plate chamber and high energy Photon beams, CO-60, 4MV, 6MV and 10MV X-rays have been investigated. The result of our study show that a significant effect was measured and was determined to be very dependent on field size, air cavity dimension and photon energy. The reductions were much larger for 10MV beam, underdosage at the interface was 12, 12.2, 16.9 and 20.6% for the CO-60, 4 MV, 6MV and 10MV, respectively. It was found that this non-equilibrium effect at the interface is more severe for the higher energy beams than that of lower energy beams and the larger cavity dimensions it is, the larger beam reductions we have. This problem is of clinical concern when lesions such as carcinoma beyond air cavities are irradiated, such as larynx, glottic and the patients with maxillectomy and ethmoidectomy and so forth.

• Journal of Magnetics
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• 제21권2호
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• pp.159-163
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• 2016

Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2003년도 제27회 추계학술대회
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• pp.56-56
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• 2003

For the treatment of superficial tumors like squamous cell carcinoma of the head and neck, 6 MV photon beam is not appropriate and a spoiler is widely used to increase dose in the buildup region, while preserving the skin sparing effect. However, commercially available treatment planning systems assume a normal unspoiled beam, thereby cannot predict the buildup dose with spoiler accurately. We aimed to implement a Monte Carlo (MC) based planning system to apply it to the radiation treatment of head and neck. Lucite with thickness of 10-mm was used for the beam spoiler with Siemens Primus 6 MV photon beam. BEAM/DOSXYZ MC system was employed to model the linac and the spoiler. To verify the calculation accuracy of MC simulations, the percent depth doses (PDDs) and profiles with and without spoiler were measured using a parallel-plate chamber. For the MC based planning, we adopted a hybrid interface system between Pinnacle (Philips, USA) and BEAM/DOSXYZ to support treatment parameters of Siemens linac and the spoiler. The measurements of PDDs and profiles agreed with the corresponding MC simulations within 2% (lSD), which demonstrate the reliability of our MC simulations. The spoiler generated electrons make a contribution to the absorbed dose up to depth of 2cm, which shows that the dominant source of increased dose from spoiler system is the contaminating electrons created by the spoiler. The whole procedures necessary for MC based treatment planning were performed seamlessly between Pinnacle and BEAM/DOSXYZ system. This ability helps to increase the clinical efficiency of the spoiler technique. In conclusion, we implemented a MC based treatment planning system for a 6 MV photon beam with a spoiler. We demonstrate sophisticated MC technique makes it possible to predict dose distributions around buildup region accurately.

• Animal Bioscience
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• 제35권4호
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• pp.533-543
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• 2022

Objective: Caspase-mediated apoptosis plays a crucial role in the regulation of endometrial and placental function in females. Caspase activity is tightly controlled by members of the inhibitors of apoptosis proteins (IAPs) family. However, the expression and regulation of IAPs at the maternal-conceptus interface has not been studied in pigs. Therefore, we determined the expression of IAP family members baculovirus IAP repeat-containing 1 (BIRC1) to BIRC6 at the maternal-conceptus interface in pigs. Methods: We obtained endometrial tissues from pigs at various stages of the estrous cycle and pregnancy, conceptus tissues during early pregnancy, and chorioallantoic tissues during mid- to late pregnancy and analyzed the expression of IAPs. Furthermore, we determined the effects of the steroid hormones estradiol-17β (E2) and progesterone on the expression of IAPs in endometrial explant tissue cultures. Results: During the estrous cycle, BIRC2 and BIRC5 expression varied cyclically, and during pregnancy, endometrial BIRC1, BIRC2, BIRC3, BIRC4, and BIRC5 expression varied in a stage-specific manner. Conceptus and chorioallantoic tissues also expressed IAPs during pregnancy. The BIRC2 and BIR3 mRNAs were localized to luminal epithelial cells, and BIRC4 proteins to glandular epithelial cells in the endometrium. Exposure of endometrial tissues to E2 increased the expression of BIRC6, while progesterone increased the expression of BIRC1, BIRC4, and BIRC6 in a dose-dependent manner. Conclusion: These results indicated that IAPs were expressed in the endometrium during the estrous cycle and at the maternal-conceptus interface during pregnancy in a stage-specific manner. In addition, steroid hormones were found to be responsible for the expression of some IAPs in pigs. Together, the results suggested that IAPs may play important roles in endometrial and placental functions by regulating caspase action and apoptosis at the maternal-conceptus interface.

• 대한전자공학회논문지SD
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• 제47권4호
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• pp.13-19
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• 2010

중수소 결합이 존재하는 게이트 산화막을 갖는 MOSFET는 일반 MOSFET에 비해 신뢰성이 개선된다고 알려져 있다. 본 연구에서는 MOS 소자의 게이트 산화막내에 중수소를 분포시키기 위해 새로운 중수소 이온 주입법을 제안하였다. MOS 소자를 구성하는 층간 물질 및 중수소가 분포할 위치에 따라 중수소 이온 주입 에너지는 다양하게 변하게 된다. 이온 주입 후 발생할 수 있는 물질적 손상을 방지하기 위해 후속 열처리 공정이 수반된다. 제조된 일반 MOSFET를 사용하여 제안된 중수소이온 주입을 통해 게이트 산화막내 계면 및 bulk 결함이 감소함을 확인하였다. 그러나 이온 주입으로 인해 실리콘 기판의 불순물 농도가 변화할 수 있으므로 이온 주입 조건의 최적화가 필요하다. 중수소 이온 주입된 MOSFET의 CV 및 IV 특성 조사를 통해 이온 주입으로 인한 트랜지스터의 성능 변화는 발생하지 않았다.