• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.115-117
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• 2009

Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.357-357
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• 2010

Using ab initio density functional theory, we study the structural and electronic properties of interface between Cu surface and highly electron withdrawing hexaazatriphenylene-hexanitrile (HAT-CN) known as an efficient hole injection layer for organic light emitting diodes (OLEDs). We calculate the equilibrium geometries of the interface with different HAT-CN coverages. Usually, some of C-N bonds located at the edge of the HAT-CN molecule are deformed toward Cu atoms resulting in the reconstruction of Cu surface. By analyzing the electron charge and the potential distributions over the interface, we observe the formation of surface dipoles, which modify the work function at the interface. Such dipole formation is attributed to two origins, one of which is a geometrical nature and the other is a bond dipole. The former is related to structural deformation mentioned above, whereas the latter is due to charge transfer between organic and metal surface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.77-82
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• 2005

We compare electrical and optical properties of organic light emitting diodes (OLEDs) using rhodium-oxide-coated indium-tin-oxide ($O_2$-Rh/ITO) to that using $O_2$-plasma-treated ITO (ITO) anodes. The turn-on voltage decreased from 7 V to 5 V and luminance value increased when the $O_2$ plasma treated Rh layer was deposited on ITO. Synchrotron radiation photoelectron spectroscopy results showed the dipole energies of both ITO and $O_2$-Rh/ITO were same with each other, - 0.3 eV, meaning the formation of same amount of interface dipole. The secondary electron emission spectra revealed that the work function of $O_2$-Rh/ITO is higher hy 0.2 eV than that of ITO, resulting in the decrease of the tum-on voltage via reduction ofhole injection barrier.

• Proceedings of the IEEK Conference
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• 2002.06e
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• pp.133-136
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• 2002

EEG(Electroencephalography) is generated by electrical activity between neurons in cortical. Waveform of EEG is changed according to body and mental states. Therefore EEG is used to diagnosis of encephalophyma and epilepsy, etc. Also EEG is used to HCI(Human-Computer Interface). This paper describes estimation of orientation and location of dipole sources. The forward model is three-layer spherical head model and current dipole model. Using analytical solution, EEG is generated. Using MNLS(Minimum-Norm Least-Square) method, orientation and location of dipole moment is estimated.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2001.09a
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• pp.92-96
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• 2001

Although the problem of seawater intrusion at the coastal aquifer was recognized before over one hundred years at the coastal aquifer, much groundwater keep on being salinitized by several reasons such as groundwater exhaustion, coastalline change, and human activities. The horizontal and vertical electrical soundings and geostatistical methods were used to define the local characteristics of saltwater intrusion and to estimate the saltwater interface in the southeastern area of the Pusan City. The 24 points of the Schlumberger vertical electrical soundings(VES) to loom depth and the 2 lines of dipole-dipole horizontal soundings are peformed. The resistivity data have lognormal distributions. The horizontal extents of saline water intrusion were estimated from the inversion of horizontal prospecting data. Lognormal ordinary kriging is used in A-A' resistivity profiles on May and July because the data have stationary models in semivariograms. Lognormal IRF-k kriging is used for the isopleth maps using vertical resistivity data. The 10 ohm-m resistivity line on the isopleth maps of 21m, 30m, 50m, and 70m depth using resisitivity data measured in July is sifted to the east, cpomparing that of the isopleth maps measured in May. The kriged vertical and horizontal resistivity isopleth maps suggested that the geostatistical methods can be used to define the variation of earth resistivity distribution at the saltwater interface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1546-1549
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• 2018

We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and 'Zn-O' state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.179-182
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• 1998

The structural changes of molecules on the water surface were measured by displacement currents and $\pi$-A isotherm. By using a theoretical equations we calculated charges($\Delta$Q) and dipole moment( $m_{z}$) of saturated fatty acids( $C_{12}$, $C_{14}$, $C_{16}$). The dynamic behavior of saturated fatty acid monolayers at the air/water interface was investigated using a displacement current-measuring technique coupled with the so called Langmuir film technique and also the dipole moment of the acids was determined.as determined.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.719-722
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• 2002

The Displacement current measurement system used in this experiment because detecting the dynamic behavior of monolayers at the air-water interface is possible. It basically consists of a film balance, a pair of electrodes connected to each other through a sensitive ammeter. Here, one electrode is suspended in air and the other electrode is placed in the water. PBLG phase transformation measured by Maxwell-displacement-current-measurement method in surface of the water. Measured (surface pressure, displacement current and dipole moment) of monolayers of PBLG on the water surface. We measured displacement current that occur when changed temperature. Could know that displacement current is proportional in increase of temperature and great as experiment result.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.243-243
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• 2012

Self-assembled monolayers (SAMs) prepared by aromatic thiols on gold surfaces have much larger potential for electronic device applications due to their electronic properties. In this study, the formation and structures of SAMs prepared by benzenethiol (BT), toluenethiol (TT), 2-fluorobenzenethiol (2-FBT), 3-fluorobenzenethiol (3-FBT), 4-fluorobenzenethiol (4-FBT), 4-chlorobenzenethiol (4-CBT), 4-fluorobenzenemethanethiol (4-FBMT), and 4-chlorobenzenemethanethiol (4-CBMT) on Au(111) were examined using scanning tunneling microscopy (STM) and Kelvin probe (KP) to explore the structure and electronic interface properties of eight differently substituted aromatic thiol SAMs on Au(111). And these values are compared with gas phase dipole moments computed by quantum chemical calculations for individual thiol molecules. It was revealed that all eight thiol-molecules form uniform SAMs on Au(111) at $75^{\circ}C$ compared to lower solution temperature by STM observation. The work function change obtained in the KP measurements and calculated molecular dipole moments have the linear relationship while the 4-FBMT and 4-CBMT deviate from this tendency.