• Title/Summary/Keyword: Interface Bonding

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Studies on the Vibration Controllability of Smart Structure Depending on the Interfacial Adhesion Properties of Composite Materials (복합재료내의 계면 접착 특성에 따른 지능형 구조물의 진동제어에 관한 연구)

  • 한상보;박종만;차진훈
    • Journal of KSNVE
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    • v.8 no.6
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    • pp.1093-1102
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    • 1998
  • The success of controllability of smart structures depends on the quality of the bonding along the interface between the main structure and the attached sensing and acuating elements. Generally, the analysis procedures neglect the effect of the interfacial bond layer or assume that this bond layer behaves like viscoelastic material. Three different bond layers. two modified epoxy adhesives, and one isocyanate adhesive were prepared for their toughness and moduli. Bond layer of the chosen adhesive provides an almost perfect bonding condition between the composite structure and the PZT while bended significantly like arrow-shape. The perfect bonding condition is tested by considering various material properties of the bond layers. and based on this perfect bonding condition, the effects of the interfacial bond layer on the dynamic behavior and controllability of the test structure is experimentally studied. Once the perfect bonding condition is achieved. dynamic effects of the bond layer itself on the dynamic characteristics of the main structure is negligible. but the contribution of the attached PZT elements on the stiffness of the multi-layered structure becomes significant when the thickness of the bond layer increased.

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Low Temperature Bonding of Copper with Interlayers Coated by Sputtering(Part 1) (스퍼터링 코팅층을 중간재로 사용한 동(Cu)의 저온 접합(제1보))

  • Kim, Dae-Hun
    • 연구논문집
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    • s.24
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    • pp.63-79
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    • 1994
  • This article reports a experimental study of the method to achieve a bond joint at lower temperature in a short time. DC magnetron sputtering of Sn, Sn/Pb, Sn/In and Sn/Cu on copper substrate was provided as an interlayer for Cu to Cu bonding under the air environment. Various examination was conducted and investigated on the effect of experimental parameters such as coating materials, coating time(or coating thickness), bonding temperature and bonding time etc. Bonding was performed at the temperature of $210^\circC-320^\circC$ for 0sec and interfacial reaction between the coated layer and copper substrate was examined using optical, scanning electron microscope and x-ray diffractometer. From the obtained results, it was found that intermetallic compounds layer consisted of $\eta-phase(Cu_6Sn_5)$ and $\beta-phase(Cu_3Sn)$ was formed at the joint interface for almost all coating materials. But the dominant phase formed in the preetched Cu substrate coated with Sn was $\beta-phase$. A characteristic morphology looks like a reaction ring, which was believed as the strong interconnecting regions between two substrates, was found to be formed on the reaction surface of copper substrates. The morphologies and compositions of the intermetallics, which depends on the regions of the reaction surface, was appeared as greatly different. Based on above results, the new bonding process to make the joint at lower temperature for short time can be admitted as a feasible process.

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ANODICALLY-BONDED INTERFACE OF GLASS TO ALUMINIUM

  • Takahashi, Makoto;Nishikawa, Satoru;Chen, Zheng;Ikeuchi, Kenji
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.65-69
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    • 2002
  • An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

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Characterization of both adhesion and interfacial interaction between optical fiber coating and structural

  • Brotzu, A.;Felli, F.;Fiori, L.;Caponero, M.A.
    • Smart Structures and Systems
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    • v.4 no.4
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    • pp.439-448
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    • 2008
  • Optical fiber sensors are by now broadly accepted as an innovative and reliable device for structural health monitoring, to be used either embedded into or bonded on structures. The accuracy of the strain measurement achievable by optical fiber sensors is critically dependent on the characteristics of the bonding of the various interface layers involved in the sensor bonding/embedding (structure material and gluing agent, fiber coating and gluing agent, fiber coating and fiber core). In fact, the signal of the bonded/embedded optical fiber sensor must correspond to the strain experienced by the monitored structure, but the quality of each involved interface can affect the strain transfer. This paper faces the characterization, carried on by both mechanical tests and morphological analysis, of the strain transfer function resulting with epoxidic and vinylester gluing agent on polyimide and acrylate coated optical fibers.

Heated Tool Bonding of Plastic Pipes

  • Troughton, Mike;Wermelinger, Joerg;Choi, Sunwoong
    • Journal of Adhesion and Interface
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    • v.21 no.1
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    • pp.1-5
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    • 2020
  • Heated tool joining is a popular method for joining parts made from plastics and composite materials. The method is commonly known as butt fusion in the plastic pipe industry and this paper provides a short introduction to the basics of producing a good butt fusion joint. The function of each of the essential parts of the butt fusion equipment is described followed by a presentation of the important parameters of the bonding process in reference to a well-established interfacial pressure versus time curve. The butt fusion procedure is then outlined with good practices that detail the preparation of equipment and pipes to be joined as well as the fusion joining process.

Consideration on the various phenomena appeared at bonding interface in fusion-bonded silicon wafer pairs (용융접합된 규소 기판쌍에 있어서 접합 계면에 발생하는 제 현상들의 고찰)

  • Bhang, J.H.;Ju, B.K.;Oh, M.H.;Park, J.W.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1057-1059
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    • 1993
  • Some interested phenomena, which were appeared near the bonding interface, were investigated by angle lapping and delineation method, SEM, and TEM observations. Voids, defects, material continuity, and interfacial oxide stability were observed and discussed in the fusion-bonded Bi-Si or Si-$SiO_2$/Si wafer pairs.

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Superfine Flip-Chip Interconnections in 20-$\mu\textrm{m}$-pitch

  • Bonkohara, Manabu
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.09a
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    • pp.183-199
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    • 2002
  • Reliability.The reliability strongly depended on the CTE of underfill resin..The fractured portion was identical with the maximum plastic equivalent strain..1 % or less value of the maximum plastic equivalent strain certified more than 1000 cycle of TCT life. UFB.Bonding accuracy was confirmed within2$2{\mu}{\textrm}{m}$..The fundamental bondability of UFB was confirmed with no damage around aluminum pads. Some dislocations and vacancies were observed at the interface, however, the atomic level bonding was confirmed. CBB.Dry process was applied to UBM removal.

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A study on pre-bonding of Si wafer direct bonding at HF pre-treatment (HF 전처리시 Si기판 직접접합의 초기접합에 관한 연구)

  • Chung, Gwiy-Sang;Kang, Kyung-Doo
    • Journal of Sensor Science and Technology
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    • v.9 no.2
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    • pp.134-140
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    • 2000
  • Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding. (Min : $2.4kgf/cm^2{\sim}$Max : $14.9kgf/cm^2$)

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Bond behaviour at concrete-concrete interface with quantitative roughness tooth

  • Ayinde, Olawale O.;Wu, Erjun;Zhou, Guangdong
    • Advances in concrete construction
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    • v.13 no.3
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    • pp.265-279
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    • 2022
  • The roughness of substrate concrete interfaces before new concrete placement has a major effect on the interface bond behaviour. However, there are challenges associated with the consistency of the final roughness interface prepared using conventional roughness preparation methods which influences the interface bond performance. In this study, five quantitative interface roughness textures with different roughness tooth angles, depths, and tooth distribution were created to ensure consistency of interface roughness and to evaluate the bond behaviour at a precast and new concrete interface using the splitting tensile test, slant shear test, and double-shear test. In addition, smooth interface specimens and two separate the pitting interface roughness were also utilized. Obtained results indicate that the quantitative roughness has a very limited effect on the interface tensile bond strength if no extra micro-roughness or bonding agent is added at the interface. The roughness method however causes enhanced shear bond strength at the interface. Increased tooth depth improved both the tensile and shear bond strength of the interfaces, while the tooth distribution mainly influenced the shear bond strength. Major failure modes of the test specimens include interface failure, splitting cracks, and sliding failure, and are influenced by the tooth depth and tooth distribution. Furthermore, the interface properties were obtained and presented while a comparison between the different testing methods, in terms of bond strength, was performed.

Influence of metal annealing deposited on oxide layer

  • Kim, Eung-Soo;Cho, Won-Ju;Kwon, Hyuk-Choon;Kang, Shin-Won
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.365-368
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    • 2002
  • We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

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