• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1070-1074
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.85-88
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on chalcogenide $Ag/As_{40}Se_{15}S_{35}Ge_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by +1st order intensity and formed grating structure was investigated using atomic force microscopy.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1042-1045
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on amorphous $MgF_2$/As-Ge-Se-S multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm). under different polarization combinations. The diffraction efficiency was obtained by +1st order intensity. The maximum diffraction efficiency of As-Ge-Se-S single layer and $MgF_2$/As-Ge-Se-S multi-layer were 0.8% and 1.4%

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.197-197
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• 2009

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.275-276
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• 2011

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide As2Se3 thin films with Ag layer. The basic optical parameter which is a refractive index and extinction coefficent was taken by n&k analyzer. The source of laser was selected based on these parameter. Holographic gratings have been formed using He-Ne laser (wavelength: 632.8 nm) Diode Pumped Solid State laser (DPSS, wavelength: 532.0 nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.107-107
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• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.275-276
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• 2007

체적형 홀로그래픽 메모리는 고용량의 저장밀도와 빠른 전송속도를 가지는 장점을 가지고있다. 더 높은 저장밀도를 얻기 위해 다양한 다중화 기법들이 연구되고 있다. 일정한 공간에 여러 개의 정보를 한꺼번에 저장할 수 있는 다중화 기법에는 각도에 따른 다중화, 기록 위치에 따른 다중화, 위상 변화에 따른 다중화를 비롯한 여러 가지 방법이 있다. 대부분의 다중화 기법들은 홀로그램을 저장할 때 순차적으로 기록하게 된다. 하지만 포토폴리머에 한번 정보가 저장되면 그 위에 다시 기록이 되지 않는다. 그래서 한번에 여러 개의 데이터를 저장하고 재생하는 시스템의 필요성이 요구된다. 본 논문에서는 이러한 점을 고려하여 빛의 편광성분을 이용해 다중화 하는 방법을 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.134-134
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• 2010

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.127-130
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• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver, $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ muliti-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under different polarization state(intensity, phase polarization holography). The diffraction efficiency was obtained by first order intensity. The maximum diffraction efficiency of $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver was 0.8% and The maximum diffraction efficiency of $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer(multi-layer I, multi-layer II) were 1.4% and 3.1%.