• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1070-1074
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.85-88
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on chalcogenide $Ag/As_{40}Se_{15}S_{35}Ge_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by +1st order intensity and formed grating structure was investigated using atomic force microscopy.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1042-1045
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on amorphous $MgF_2$/As-Ge-Se-S multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm). under different polarization combinations. The diffraction efficiency was obtained by +1st order intensity. The maximum diffraction efficiency of As-Ge-Se-S single layer and $MgF_2$/As-Ge-Se-S multi-layer were 0.8% and 1.4%

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.197-197
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• 2009

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.275-276
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• 2011

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide As2Se3 thin films with Ag layer. The basic optical parameter which is a refractive index and extinction coefficent was taken by n&k analyzer. The source of laser was selected based on these parameter. Holographic gratings have been formed using He-Ne laser (wavelength: 632.8 nm) Diode Pumped Solid State laser (DPSS, wavelength: 532.0 nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.107-107
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• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.275-276
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• 2007

A multiplex recording and reading technique in photopolymer are presented In order to record the polarization gratings, polarization-sensitive materials, in which linear birefringence is induced by irradiating the polarized light, are necessary. We checked orthogonal and independence of laser. The value of the photoinduced linear polarization had effect on diffraction properties in the holographic gratings. The grating strengths of two polarization are investigated and the relevant parameters for equal diffraction intensity readout are optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.134-134
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• 2010

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.127-130
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• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver, $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ muliti-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under different polarization state(intensity, phase polarization holography). The diffraction efficiency was obtained by first order intensity. The maximum diffraction efficiency of $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver was 0.8% and The maximum diffraction efficiency of $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer(multi-layer I, multi-layer II) were 1.4% and 3.1%.