• 제목/요약/키워드: Integration Devices

검색결과 499건 처리시간 0.022초

Aerosol Deposition Method에 의한 수동소자와 능동소자의 동시 직접화를 위한 다양한 유전체 후막 (Various Dielectric Thick Films for Co-Integration of Passive and Active Devices by Aerosol Deposition Method)

  • 남송민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.348-348
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    • 2008
  • In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

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실리콘-화합물 융합 반도체 소자 기술동향 (Technical Trend of Fusion Semiconductor Devices Composed of Silicon and Compound Materials)

  • 이상흥;장성재;임종원;백용순
    • 전자통신동향분석
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    • 제32권6호
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    • pp.8-16
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    • 2017
  • In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

  • 이강욱
    • 마이크로전자및패키징학회지
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    • 제22권2호
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    • pp.11-19
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    • 2015
  • Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.

3D 칩 적층을 위한 하이브리드 본딩의 최근 기술 동향 (Recent Progress of Hybrid Bonding and Packaging Technology for 3D Chip Integration)

  • 정철화;정재필
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.38-47
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    • 2023
  • Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

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MEMS for Heterogeneous Integration of Devices and Functionality

  • Fujita, Hiroyuki
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.133-139
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    • 2007
  • Future MEMS systems will be composed of larger varieties of devices with very different functionality such as electronics, mechanics, optics and bio-chemistry. Integration technology of heterogeneous devices must be developed. This article first deals with the current development trend of new fabrication technologies; those include self-assembling of parts over a large area, wafer-scale encapsulation by wafer-bonding, nano imprinting, and roll-to-roll printing. In the latter half of the article, the concept towards the heterogeneous integration of devices and functionality into micro/nano systems is described. The key idea is to combine the conventional top-down technologies and the novel bottom-up technologies for building nano systems. A simple example is the carbon nano tube interconnection that is grown in the via-hole of a VLSI chip. In the laboratory level, the position-specific self-assembly of nano parts on a DNA template was demonstrated through hybridization of probe DNA segments attached to the parts. Also, bio molecular motors were incorporated in a micro fluidic system and utilized as a nano actuator for transporting objects in the channel.

Skin-interfaced Wearable Biosensors: A Mini-Review

  • Kim, Taehwan;Park, Inkyu
    • 센서학회지
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    • 제31권2호
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    • pp.71-78
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    • 2022
  • Wearable devices have the potential to revolutionize future medical diagnostics and personal healthcare. The integration of biosensors into scalable form factors allow continuous and noninvasive monitoring of key biomarkers and various physiological indicators. However, conventional wearable devices have critical limitations owing to their rigid and obtrusive interfaces. Recent developments in functional biocompatible materials, micro/nanofabrication methods, multimodal sensor mechanisms, and device integration technologies have provided the foundation for novel skin-interfaced bioelectronics for advanced and user-friendly wearable devices. Nonetheless, it is a great challenge to satisfy a wide range of design parameters in fabricating an authentic skin-interfaced device while maintaining its edge over conventional devices. This review highlights recent advances in skin-compatible materials, biosensor performance, and energy-harvesting methods that shed light on the future of wearable devices for digital health and personalized medicine.

질화갈륨 전력반도체와 Si CMOS 소자의 단일기판 집적화를 위한 Si(110) CMOS 공정개발 (Development of Si(110) CMOS process for monolithic integration with GaN power semiconductor)

  • 김형탁
    • 전기전자학회논문지
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    • 제23권1호
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    • pp.326-329
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    • 2019
  • 차세대 전력반도체 소재인 질화갈륨(GaN)이 증착된 GaN-on-Si 기판의 기술성숙도가 높아지면서 Si CMOS 소자와의 단일기판 집적화에 대한 관심이 고조되고 있다. CMOS 특성이 상대적으로 저하되는 (111)Si 보다 (110)Si의 CMOS소자가 집적화 관점에서 유리할 것으로 판단되며, 따라서 향후 전개될 GaN-on-(110)Si 플랫폼을 활용한 GaN 전력반도체 스위치소자와 Si CMOS소자의 단일기판 집적화에 적용될 수 있도록 국내 Si CMOS 파운드리 공정을 (110)Si 기판에 진행하였다. 제작된 CMOS소자의 기본특성 및 인버터체인 회로특성, 그리고 게이트 산화막의 신뢰성 분석을 통해 향후 국내 파운드리공정을 활용한 (110)Si CMOS기술과 GaN의 집적화의 가능성을 검증하였다.

State of The Art in Semiconductor Package for Mobile Devices

  • Kim, Jin Young;Lee, Seung Jae
    • 한국전자파학회지:전자파기술
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    • 제24권2호
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    • pp.23-34
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    • 2013
  • Over the past several decades in the microelectronics industry, devices have gotten smaller, thinner, and lighter, without any accompanying degradation in quality, performance, and reliability. One permanent and deniable trend in packaging as well as wafer fabrication industry is system integration. The proliferating options for system integration, recently, are driving change across the overall semiconductor industry, requiring more investment in developing, ramping and supporting new die-, wafer- and board-level solution. The trend toward 3D system integration and miniaturization in a small form factor has accelerated even more with the introduction of smartphones and tablets. In this paper, the key issues and state of the art for system integration in the packaging process are introduced, especially, focusing on ease transition to next generation packaging technologies like through silicon via (TSV), 3D wafer-level fan-out (WLFO), and chip-on-chip interconnection. In addition, effective solutions like fine pitch copper pillar and MEMS packaing of both advanced and legacy products are described with several examples.

Direct Printable Nanowire p-n Junction device

  • Lee, Tae-Il;Choi, Won-Jin;Kar, Jyoti Prakash;Moon, Kyung-Ju;Lee, Min-Jung;Jun, Joo-Hee;Baik, Hong-Koo;Myoung, Jae-Min
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.30.2-30.2
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    • 2010
  • Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

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Multi-threading 기법을 적용한 선박 전자장치 프로토콜 통합 시스템의 구현 (Development of the Protocol Integration System with Multi-threading Method for the Ship Electronic Device)

  • 김학태;정길도
    • 한국산학기술학회논문지
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    • 제12권3호
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    • pp.1313-1318
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    • 2011
  • 안전하고 정확한 항해를 위해 선박에서는 진북을 나타내는 자이로 콤파스와 자북을 가리키는 마그네틱 콤파스, 그 외에 GPS 등의 다양한 선박 전자장치들이 활용되고 있지만 이러한 장치들의 호환성 문제로 인해 전체 선박 시스템의 효율성 및 유지보수성이 크게 저하되고 있다. 본 논문에서는 이러한 호환성 문제를 해결하기 위해 선박 전자장치의 다양한 출력신호들을 동일한 하나의 표준 형식으로 변환해 주는 프로토콜 통합 시스템을 제안하였다. 시스템 설계 시 다수의 장치들로부터 입력되는 신호들을 동시에 처리하기 위하여 Multi-threading 기법을 적용하였으며, 실험을 통해 이를 통한 데이터 처리 성능 향상을 확인하였다.