• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2105-2107
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• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.89-93
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• 2002

In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.389-393
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• 2003

This paper presents circuit modeling and characterization of silicon-based on-chip integrated inductors in Giga Hertz range for wireless communication products. We compare several different designs of on-chip inductors for self-resonant frequency and quality factor. The measurement data could be used as a design guide for manufacturing practical spiral inductors for wireless applications. We provide the equivalent inductor circuit parameters from the actual measurement data.

• 대한전자공학회논문지SD
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• 제37권10호
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• pp.17-24
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• 2000

면적 효율이 높은 대칭 구조를 갖는 이중층 나선형 인덕터를 제시하였으며 그 특성을 일반적인 단일층 나선형 인덕터와 비교하여 분석하였다. 일반적인 예측과 달리 이중층 인덕터의 상하층 유도 계수가 인덕터의 권선수와 함께 증가하는 것을 확인하였고 이로 인하여 동일한 면적에 대하여 이중층 인덕터은 권선수에 따라 단일층에 비해 2.5-4배 정도 높은 인덕턴스값을 나타내었다. 또한 같은 인덕턴스 값에 대하여 이중층 구조로 단일층 구조 보다 높은 충실도를 가짐을 확인하였다. 본 논문에서는 이중층 나선형 인덕터가 단일층 나선형 인덕터보다 면적 효율과 충실도 측면에서 우수하여 RF집적회로에 활용되기에 적절한 보다 구조임을 제시하고자 한다. 제시된 이중층 나선형 인덕터는 완벽한 대칭 구조를 갖도록 설계되었으며 측정 결과에서 이와 같은 특성을 확인할 수 있었으며, 고주파용 초크로서 활용가능성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.83-87
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• 2003

In the present paper we suggested a parallel branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on p-type silicon wafer (5∼15Ω-cm) under the standard CMOS process and it showed a enhanced qualify(Q) factor by more than 10 % with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with conventional spital inductors

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.912-915
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• 2004

Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.203-207
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• 1999

In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권4호
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.109-111
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• 2006

This paper presents characterization and analysis of integrated ferromagnetic inductors in RF regime. Two different materials (CoFe/NiFe) are used as ferromagnetic material. Systematic studies of the inductance (L), the Q-factor (Q) and the structure of the inductor have been performed.

• 반도체디스플레이기술학회지
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• 제2권1호
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• pp.11-14
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• 2003

The high Q(quality factor) suspended spiral inductors were fabricated on the silicon substrate by 3D surface micromachined process. The integration of 2.4GHz VCO has been performed by fabricating suspended spiral inductor of the top of CMOS VCO circuit. The phase noise of VCO integrated MEMS inductor is 93.5 dBc/Hz at 100kHz of offset frequency.