• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.6B
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• pp.325-333
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• 2007

An OS requires the device driver to control hardware IPs at application level. Development of a device driver requires specific acknowledge for target hardware and OS. In this paper, we present a system which generates a device driver together with an interface circuit. In the proposed system, an efficient device driver is generated by selecting a basic device driver skeleton, a function module code, and a header file table from the pre-constructed library and an interface circuit is constructed such that the generated device driver operates correctly. The proposed system is evaluated by generating a TFT-LCD device driver on the ARM922T core with 3.5 inch Samsung TFT-LCD in ARM-Linux environment. Experiment result shows that the writing time on the LCD is decreased by 1.12% and the compiled code size is increased by 0.17% compared to the manually generated one. The automatically generated device driver has no performance degradation in the latency of hardware control at the application program level. The system development time can be reduced using the proposed device driver generation system.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.54-60
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• 2008

The bus architecture consists of a master initiating a communication transaction, a slave responding to the transaction, a arbiter selecting a master, a bridge connecting buses and so on. Recently this is more complicated and developed toward multi-bus architecture. In this paper, several cases of multi-shared bus architecture are discussed and in order to decrease the bridge latency, the architecture introducing a memory selector is proposed. Finally, a LCD controller using DMA master is integrated in this bus architecture that is verified due to RTL simulation and FPGA board test. DMA, LCD line buffer and SDRAM controller are normally operated in the timing simulation using ModelSim tool, and the LCD image is confirmed in the real FPGA board containing LCD panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.529-529
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• 2006

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.375-378
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• 2004

In this paper, we fabricated pantacene TFTs using PVP copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and poly (melamine-co-formaldehyde) the performance has been changed. We obtained the best performance with the mobility of 0.12cm2/V sec and the on/off current ratio of $1.19{\times}10^6$ for the case of $10wt\%$ PVP copolymer mixed with $5wt\%$ poly(melamine-co-formaldehyde). Additionally using OTFTs with the above PVP gate insulator, we fabricated the integrated circuit including inverter which produced the gain of 5.56 on the glass substrate and gain of 9.7 on the plastic (PET) substrate. And the threshold voltage was respectively +8V and +14v$ldots$

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1035-1037
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• 2005

2.32-inch $320{\times}350$ TFT-LCD with high resolution (206PPI) for advanced mobile phones could be successfully developed. The compact pixel design based on PMOS SLS technique is used to achieve this high resolution. Gate driver and part of data driver are integrated onto the glass substrate. High brightness (170cd) and contrast ratio (400:1) were obtained with very low flickering and crosstalk levels.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.66.1-66.1
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• 2012

Although all printed cost-less radio frequency identification (RFID) tags have been considered as a core tool for bringing up a ubiquitous society, the difficulties in integrating thin film transistors (TFTs), diodes and capacitors on plastic foils using a single in-line printing method nullify their roles for the realization of the ubiquitous society1,2. To prove the concept of all printed cost-less RFID tag, the practical degree of the integration of those devices on the plastic foils should be successfully printed to demonstrate multi bit RFID tag. The tag contains key device units such as 13.56 MHz modulating TFT, digital logic gates and 13.56 MHz rectifier to generate and transfer multi bit digital codes via a wireless communication (13.56 MHz). However, those key devices have never been integrated on the plastic foils using printing method yet because the electrical fluctuation of fully printed TFTs and diodes on plastic foils could not be controlled to show the function of desired devices. In this work, fully gravure printing process in printing 13.56 MHz operated 32 bit RFID tags on plastic foils has been demonstrated for the first time to prove all printed RFID tags on plastic foils can wirelessly generate and transfer 32 bit digital codes using the radio frequency of 13.56 MHz. This result proved that the electrical fluctuations of printed TFTs and diodes on plastic foils should be controlled in the range of maximum 20% to properly operate 32 bit RFID tags.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.3
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• pp.439-444
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• 2011

In this paper, we implemented the intelligent smart monitor system for next generation which is most commonly viewed information in a vehicle from the instrument cluster, where speed, tachometer, fuel, engine temperature, fuel gauge, turn indicators and warning lights and provide the driver with an array of informations. Designed Smart HUD(Head-Up-Display) monitor system is composed TFT LCD, LCD Back light led, plane mirror, lens and controllers parts and it was assembled to intelligent integrated smart monitor system. Finally, we analyze intelligent integrated smart monitor system for driver safety vehicles and present the possibility to apply to smart intelligent HUD total monitor system for next generation.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1336-1339
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• 2007

Since organic thin film transistor (OTFT) provides simple and low cost processes, its application to the OTFT display has been studied. We developed an RC oscillator using organic thin film transistor and inverters with bootstrapping transistors. Device parameters were optimized by the simulation and OTFT RC oscillators were fabricated. The oscillator frequency and its dependence on resistance and bias voltage were studied. The organic TFT is adequate for low cost and simple process integrated circuits. The frequency of oscillation was simulated and measured. It is acceptable for low-cost microelectronic device and flat panel displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.118-121
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• 1995

Fabrication and a new analytical expression for the capacitance characteristics of hydrogenerated amorphous silicon thin film transistors(a-Si:H TFTs) is presented and experimentally verified. The results show that the experimental capacitance characteristics are easily measeured. Measured transfer and DC output characteristic curves of a-Si:H TFT are similar to those of the standard MOSFET-IC. The capacitances on bias voltages are in good agreement with experimental data. This capacitance characteristics is suitable for incorporation into a circuit simulator and can be used for computer-aided design of a-Si thin film transistor integrated circuits.