• Journal of Information Display
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• 제10권1호
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• 대한전자공학회논문지SD
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• 제37권3호
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• pp.34-38
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• 2000

본 논문에서는 AlGaAs/lnGaAs/GaAs P-HEMT 소자를 이용한 10 Gb/s 광수신기용 MMIC 초고속 저잡음 전치증폭기를 설계, 제작하고 특성을 분석 하였다. T 형태의 0.15㎛ 게이트 길이를 갖는 P-HEMT 소자를 이용하여 3단 트랜스임피던스 구조로 회로를 설계하였으며 광대역 특성을 얻기 위하여 피킹인덕터를 사용하였고, 저잡음특성을 위하여 게이트폭을 최적화하였다. 제작된 전치증폭기는 트랜스임피던스 이득 60㏈Ω, 대역폭 9.15 ㎓, 잡음지수가 3.9 ㏈ 이하인 특성을 보였다.

• 전자공학회논문지D
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• 제36D권11호
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• pp.27-32
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• 1999

고온 열처리 시킨 $LiNbO_3/Si$(100) 구조를 이용한 MFS 디바이스를 제작하여 비휘발성 메모리 동작을 확인하였다. 제작한 트랜지스터의 선형영역에서 산출한 전계효과 이동도와 상호 컨덕턴스는 각각 약 $600cm^2/Vs$ 및 0.16mS/mm 이었다. 0.5V의 게이트 전압(즉, read 전압)에서 측정한 드레인 전류의 온/오프 비는 $10^4$배 이상이었다. 분극반전에 사용한 전압은 ${\pm}3V$ 이하로 매우 낮아 이는 저소비전력용 집적회로에 적용시키기에 기대가 된다. 세게 도핑시킨 반도체위에 제작한 MFS 커패시터는 500kHz의 바이폴라 전압펄스(peak-to-peak 6V, 50% duty cycle) 측정으로 $10^{10}$ cycle 까지도 분극의 열화현상이 없는 양호한 특성을 얻었다.

• 한국기계가공학회지
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• 제14권3호
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• pp.15-20
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• 2015

After the US government declared 3D printing technology a next-generation manufacturing technology, there have been many practical studies conducted to expand 3D printing technology to manufacturing technologies, called AMERICA MAKES. In particular, the Keck Center, located at the University of Texas at El Paso, has studied techniques for easily combing the 3D stacking process with space mobility and expanded these techniques to simultaneous staking techniques for multiple materials. Additionally, it developed convergence manufacturing techniques, such as direct inking techniques, in order to produce a module structure that combines electronic circuits and components, such as CUBESET. However, in these studies, it is impossible to develop a unified system using traditional independent through simple sequencing connections. This is because there are many problems in the integration between the stacking modeling of 3D printers and post-machining, such as thermal deformations, the precision accuracy of 3D printers, and independently driven coordinate problems among process systems. Therefore, in this paper, the integration method is suggested, which combines these 3D printers and subsequent machining process systems through an Internet-based cloud. Additionally, the sequential integrated system of a 3D printer, an NC milling machine, machine vision, and direct inking are realized.

• 문화기술의 융합
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• 제6권3호
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• pp.167-174
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• 2020

본 연구는 실외 동작활동을 연계한 수학활동이 유아의 운동능력에 어떠한 영향을 미치는지 알아보는 데 목적이 있다. 경기도에 위치한 S유치원 만 5세 유아를 대상으로 총 15주간의 프로그램을 실시하였다. 본 연구의 유아 운동능력 검사에서는 지성애(2007)의 유아 운동능력 검사 척도를 사용하였다. 각 영역은 모두 5점 평정척도로 구성되어 있다. 검사 문항의 수는 총 33개 문항이다. 유아의 운동능력에 대한 사전검사와 사후검사를 실시하였다. t 검증을 사용하였다. 본 연구 결과, 실외 동작활동을 연계한 수학활동이 유아의 전체 운동능력, 비이동 운동 능력, 이동 운동 능력의 증진에 긍정적인 효과가 있는 것으로 나타났다. 본 연구의 결과를 바탕으로 한, 실외 동작활동과 통합한 다양한 프로그램이 개발되어 현장에 적용될 것으로 기대한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• 대한전자공학회논문지SD
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• 제46권10호
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• pp.1-8
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• 2009

본 논문에서는 아날로그 및 디지털 집적시스템에서 사용될 수 있는 온도변화에 무관한 파워-업 검출기 회로를 제안하였다. 제안된 파워-업 검출기는 트랜지스터의 문턱전압과 이동도의 상호 온도보상 기술을 이용하여 nMOS 분압기와 pMOS 분압기의 출력 전압이 온도에 무관한 특성을 갖도록 하여 온도 변화에 따른 파워-업 전압의 변화량을 최소화하였다. 68-nm CMOS 공정을 이용한 시뮬레이션 결과, 제안된 파워-업 검출기는 파워-업 전압 1.0V 기준으로 $-30^{\circ}C$에서 $90^{\circ}C$의 온도변화 조건에서 4 mV의 매우 작은 파워-업 감지 전압 변화량을 갖는 출력 특성을 보였고, 기존 회로에 비해 92.6%의 파워-업 감지 전압 변화량 감소를 확인하였다.

• Korean Membrane Journal
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• 제7권1호
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• pp.28-33
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• 2005

The feasibility of producing sulfuric acid and ammonia water from ammonium sulfate was investigated by an integrated process including ammonia stripping (AS) and electrodialysis with bipolar membrane (EDBM). It was suggested that the production of sulfuric acid using ammonia stripping-electrodialysis with bipolar membrane (ASEDBM) was effective in obtaining high concentration of sulfuric acid compared with EDBM alone. AS was carried out over pH 11 and within the range of temperatures, $20^{\circ}C{\~}60^{\circ}C$. Sodium sulfate obtained using AS was used as the feed solution of EDBM. The recovery of ammonia increased from $40\%$ to $80\%$ at $60^{\circ}C$ due to the increased mobility of ammonium ion. A pilot-scale EDBM system, which is composed of two compartments and 10 cell pairs with an effective membrane area of $200 cm^2$ per cell, was used for the recovery of sulfuric acid. The performance was examined in the range of 0.1 M${\~}$1.0 M concentration of concentrate compartment and of $25 mA/cm^2{\~}62.5 mA/cm^2$ of current density. The maximum current efficiency of $64.9\%$ was obtained at 0.1 M sulfuric acid because the diffusion rate at the anion exchange membrane decreased as the sulfuric acid of the concentrate compartment decreased. It was possible to obtain the 2.5 M of sulfuric acid in the $62.5 mA/cm^2$ with a power consumption of 13.0 kWh/ton, while the concentration of sulfuric acid was proportional to the current density below the limiting current density (LCD). Thus, the integrating process of AS-EDBM enables to recover sulfuric acid from the wastewaters containing ammonium sulfate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.286-286
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• 2011

최근 폴리머를 기판으로 하는 Flexible TFT (thin film transistor)나 3D-ULSI (three dimensional ultra large-scale integrated circuit)에서 높은 에너지 소비효율과, 빠른 반응 속도를 실현 시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)를 가지는 다결정 반도체 박막(poly-crystalline thin film)을 만들고자 하고 있다. 이를 실현 시키기 위해서는 높은 온도에서 장시간의 열처리가 필요하며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮춰주는 metal (Al, Ni, Co, Cu, Ag, Pd etc.,)을 이용하여 결정화 시키는 방법이 많이 연구 되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔여 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도를 감소시키는 단점이 있다. 이에 본 실험은 HiPIMS (High power impulse magnetron sputtering)와 PIII and D (plasma immersion ion implantation and deposition) 공정을 복합시킨 프로세스로 적은양의 금속이온주입을 통하여 재결정화 온도를 낮췄을 뿐 아니라, 잔여 하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GAXRD (glancing angle X-ray diffractometer)를 사용하였고, 잔여 하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS를 통해 분석을 하였다. 마지막으로 홀 속도와 비저항을 측정하기 위해 Hall measurement와 Four-point prove를 사용하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.