• The Magazine of the IEIE
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• v.36 no.9
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• pp.29-39
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• 2009

• 한국ITS학회:학술대회논문집
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• v.2007 no.10
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• pp.144-148
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• 2007

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.1056-1067
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• 1987

This paper presents a design procedure for building block integrated circuits that is based on the digraph relaxation model. A set of optimization procedure is prosented for a minimum area and routing-fecsible placement of IC building blocks. Chip area optimization is subject to perimeter and area constraints on the component rectangles in the dissection.

• Journal of Information Display
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• v.2 no.2
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• pp.1-6
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• 2001

A $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with a new integrated 8-bit parallel-serial digital data driver was proposed and designed. For high resolution, the proposed parallel-serial digital driver used serial video data rather than parallel ones. Thus, digital circuits for driving one column line could be integrated within very small width. The parallel-serial digital data driver comprised of shift registers, latches, and serial digital-to-analog converters (DAC's). We designed a $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with integrated 8-bit parallel-serial digital data drivers by a circuit simulator which has physical-based analytical model of poly-Si TFT's. The fabricated shift register well operated at 2 MHz and $V_{DD}$=10V and the fabricated poly-Si TFT serial DAC's, which converts serial digital data to an analog signal, could convert one bit within $2.8{\mu}s$. The driver circuits for one data line occupied $8100{\times}50{\mu}m^2$ with $4{\mu}m$ design rule.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.97-106
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• 1992

In integrated circuits, protection circuits are required to protect the internal nodes from the harmful ESD(Electrostatic discharge). This paper discusses the characteristics of the circuit components in ESD protection circuitry in order to analyze the ESD phenomina, and the design methodalogy of ESD protection circuits, using test pattern with a variation of the number of diode and transistor. The test devices are fabricated using a 0.8$\mu$m CMOS process. SPICE simulation was also carried out to relate output node voltage and measured ESD voltage. With increasing number of diodes and transistors in protection circuit, the ESD voltage also increases. The ESD voltage of the bi-directional circuit for both input and output was 100-300[V], which in higher than that of only output(uni-directional) circuit. In addition, the ESD protection circuit with the diode under the pad region was useful for the reduction of chip size and parasitic resistance. In this case, ESD voltage was improved to a value about 400[V].

• ETRI Journal
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• v.43 no.4
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• pp.728-745
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• 2021

Carbon nanotube field-effect transistors (CNTFETs) have been widely studied as a promising technology to be included in post-complementary metal-oxide-semiconductor integrated circuits. Despite significant advantages in terms of delay and power dissipation, the fabrication process for CNTFETs is plagued by fault occurrences. Therefore, developing a fast and accurate method for estimating the reliability of CNTFET-based digital circuits was the main goal of this study. In the proposed method, effects related to faults that occur in a gate's transistors are first represented as a probability transfer matrix. Next, the target circuit's graph is traversed in topological order and the reliabilities of the circuit's gates are computed. The accuracy of this method (less than 3% reliability estimation error) was verified through various simulations on the ISCAS 85 benchmark circuits. The proposed method outperforms previous methods in terms of both accuracy and computational complexity.

• Progress in Superconductivity
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• v.5 no.1
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• pp.55-60
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• 2003

We designed and constructed integrated 3-channel flux-locked-loop (FLL) electronic system for the control and readout of high-T$_{c}$ SQUIDs. This system consists of low noise preamplifiers, integrators, interface circuits, and software. FLL operation was carried out with biased signals of 19 KHz modulated current and 150 KHz modulated flux, which are reconstructed as detected signals by preamplifier and demodulator. Computer controlled interface circuits regulate FLL circuit and adjust SQUID parameters to the optimum operating condition. The software regulates interface circuits to make an auto-tuning for the control of SQUIDs, and displays readout data from FLL circuit. 3-channel SQUID electronic system was assembled with 3 FLL-interface circuit boards and a power supply board in the aluminum case of 56 mm ${\times}$ 53 mm${\times}$ 150 mm. Overall noise of the system was around 150 fT/(equation omitted)Hz when measured in the shielded room, 200 fT/(equation omitted)Hz in a weakly shielded room, respectively.y.

• The Transactions of the Korea Information Processing Society
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• v.4 no.8
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• pp.2120-2132
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• 1997

A layout automation system for analog integrated circuits is proposed. The implemented system performs full-custom analog layout under the analog layout constraints. In order to overcome the demerits of conventional analog layout systems, parameterized module library is proposed. The system can support complex analog layout modules, resulting in a maximum expandability of the system. Moreover, modified dynamic multi-path algorithm is developed by enhancing the conventional Dijkstra algorithm. Several benchmark circuits such as comparator, op amp, and filter was tested by the system. Layout results compared to OPASYN show well-merging layout and interdigitized layout module.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.515-518
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• 2002

This paper presents the iterative procedure with the concept of expanded waves in the spectral and spatial domains using the fast modal algorithm. We presents its applications to microwave integrated circuits on resistive substrate. The advantage is a reduction in computation time. These calculated results are checked by comparison with the experimental and simulated results by Sonnet and Momentum program.