• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.68-72
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• 2020

A new method for array testing of TFT-CD panel with the integrated gate driver circuits is presented. As larger size/high resolution TFT-LCD with the peripheral driver circuits has emerged, one of the important problems for manufacturing is array testing on the panel. This paper describes the technology of detecting defective arrays and optimizing the array testing process. For the effective characterization of pixel array, the pixel storage capability is simulated and measured with voltage imaging system. This technology permits full functional testing during the manufacturing process, enabling fabrication of large TFT-LCD panels with the integrated driver circuits.

• Journal of Power Electronics
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• v.18 no.2
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• pp.640-650
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• 2018

A TRIAC dimmable LED driver with a wide tuning range and a two-stage uniform dimming scheme is proposed in this paper. To solve the restricted dimming range problem caused by the limited conduction ratio of TRIAC dimmers, a conduction ratio compensation technique is introduced, which can increase the output current up to the rated output current when the TRIAC dimmer turns to the maximum conduction ratio. For further optimization, a two-stage uniform dimming diagram with a rapid dimming curve and a slow dimming curve is designed to make the LED driver regulated visually uniform in the whole adjustable range of the TRIAC dimmer. The proposed control chip is fabricated in a TSMC $0.35{\mu}m$ 5V/650V CMOS/LDMOS process, and verified on a 21V/500mA circuit prototype. The test results show that, in the 90V/60Hz~132V/60Hz ac input range, the voltage linear regulation is 2.6%, the power factor is 99.5% and the efficiency is 83%. Moreover, in the dimming mode, the dimming rate is less than 1% when the maximum dimming current is 516mA and the minimum dimming current is only about 5mA.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.2
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• pp.1-11
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• 1997

We developed a base station modulator ASIC for CDMA digital cellular system. In CDMA digital cellular system, the modulation is performed by convolutional encoding and QPSK with spread spectrum. The function blocks of base station modulator are CRC, convolutional encoder, interleaver pseudo-moise scrambler, power control bit puncturing, walsh cover, QPSK, gain controller, combiner and multiplexer. Each function block was designed by the logic synthesis of VHDL codes. The VHDL code was described at register transfer level and the size of code is about 8,000 lines. The circuit simulation and logic simulation were performed by COMPASS tools. The chip (ES-C2212B CMB) contains 25,205 gates and 3 Kbit SRAM, and its chip size is 5.25 mm * 5,45 mm in 0.8 mm CMOS cell-based design technology. It is packaged in 68 pin PLCC and the power dissipation at 10MHz is 300 mW at 5V. The ASIC has been fully tested and successfully working on the CDMA base station system.

• Journal of Power Electronics
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• v.15 no.2
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• pp.346-355
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• 2015

On the basis of the conventional PID control algorithm, a modified adaptive PID (MA-PID) control algorithm is presented to improve the steady-state and dynamic performance of closed-loop systems. The proposed method has a straightforward structure without excessively increasing the complexity and cost. It can adaptively adjust the values of the control parameters ($K_p$, $K_i$ and $K_d$) by following a new control law. Simulation results show that the line transient response of the MA-PID is better than that of the adaptive digital PID because the differential coefficient $K_d$ is introduced to changes. In addition, experimental results based on a FPGA indicate that the MA-PID control algorithm reduces the recovery time by 62.5% in response to a 1V line transient, 50% in response to a 500mA load transient, and 23.6% in response to a steady-state deviation, when compared with the conventional PID control algorithm.

• Journal of Power Electronics
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• v.17 no.3
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• pp.686-694
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• 2017

Due to the wide use of electronic products, digitally controlled DC-DC converters are attracting more and more attention in recent years. However, digital control strategies may introduce undesirable Limit Cycle Oscillation (LCO) due to quantization effects in the Analog-to-Digital Converter (ADC) and Digital Pulse Width Modulator (DPWM). This results in decreases in the quality of the output voltage and the efficiency of the system. Meanwhile, even if the resolution of the DPWM is finer than that of the ADC, LCO may still exist due to improper parameters of the digital compensator. In order to discover how LCO is generated, the state space averaging model is applied to derive equilibrium equations of a digital PID controlled DC-DC converter in this paper. Furthermore, the influences of the parameters of the digital PID compensator, and the resolutions of the ADC and DPWM on LCO are studied in detail. The amplitude together with the period of LCO as well as the corresponding PID parameters are obtained. Finally, MATLAB/Simulink simulations and FPGA verifications are carried out and no-LCO conditions are obtained.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• Journal of information and communication convergence engineering
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• v.11 no.1
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• pp.56-61
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• 2013

Modern integrated circuits (ICs) are becoming an integrated parts of analog, digital, and radio frequency (RF) circuits. Testing these RF circuits on a chip is an important task, not only for fabrication quality control but also for tuning RF circuit elements to fit multi-standard wireless systems. In this paper, RF test circuits suitable for embedded testing are introduced: RF power detectors, power control circuits, directional couplers, and six-port reflectometers. Various types of embedded RF power detectors are reviewed. The conventional approach and our approach for the RF power control circuits are compared. Also, embedded tunable active directional couplers are presented. Then, six-port reflectometers for embedded RF testing are introduced including a 77-GHz six-port reflectometer circuit in a 130 nm process. This circuit demonstrates successful calibrated reflection coefficient simulation results for 37 well distributed samples in a Smith chart. The details including the theory, calibration, circuit design techniques, and simulations of the 77-GHz six-port reflectometer are presented in this paper.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.652-657
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• 1987

This paper describes an application of CMOS Gate Array Integrated Cricuits to the implementation of three functional units: A Multiplexer, Time Switch, and Demultiplexer in the Switching Network and Digital Line Concentrator of TDX-1 system, which is a fully digital time division electronic switching system in Korea. The application of CMOS Gate Array Integrated Circuits significantly improves the overall system performance in terms of power consumption, cost, size, reliability, and timing margin, etc.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.441-445
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• 2007

In this paper we demonstrated the applications of OTFTs (organic thin film transistors) to flexible displays such as AM-EPD (active matrix electrophoretic display) and AM-OLED (active matrix organic light emitting diode), and also to integrated circuits. The OTFTs using pentacene semiconductor layer and PVP gate dielectric and Au S/D electrodes exhibited good performance for AM-EPD with the mobility of $0.59\;cm^{2}/V.sec,$ and with also good uniformity over 2.5" diagonal area. However, it is nor enough for AM-OLED requiring the mobility larger than $1\;cm^{2}/V.sec$ for large area displays. The integrated circuits also worked, producing the operating frequency of 1MHz. We need to develop a fabrication process to reduce parasitic capacitance for high frequency operation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.273-279
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• 2002

This paper presents a fabrication technology for the integration of single crystal Si microstructures with on-chip circuitry. It is a dissolved wafer technique that combines an electro-chemical etch-stop for the protection of circuitry with an impurity-based etch-stop for the microstructures, both of which are defined in an n-epi layer on a p-type Si wafer. A CMOS op. amp. has been integrated with $p^{++}$ Si accelerometers using this process. It has a gain of 68 dB and an output swing within 0.2 V of its power supplies, unaffected by the wafer dissolution. The accelerometers have $3{\;}\mu\textrm{m}$ thick suspension beams and $15{\;}\mu\textrm{m}$ thick proof masses. The structural and electrical integrity of the fabricated devices demonstrates the success of the fabrication process. A variety of lead transfer methods are shown, and process details are discussed.