• 대한금속재료학회지
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• 제48권1호
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• pp.90-100
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• 2010

Micro-conductive patterns were microfabricated on an insulating substrate ($SiO_2$) surface by a selective electroless nickel plating process in order to investigate the formation of seed layers. To fabricate micro-conductive patterns, a thin layer of metal (Cu.Cr) was deposited in the desired micropattern using laser-induced forward transfer (LIFT). and above this layer, a second layer was plated by selective electroless plating. The LIFT process. which was carried out in multi-scan mode, was used to fabricate micro-conductive patterns via electroless nickel plating. This method helps to improve the deposition process for forming seed patterns on the insulating substrate surface and the electrical conductivity of the resulting patterns. This study analyzes the effect of seed pattern formation by LIFT and key parameters in electroless nickel plating during micro-conductive pattern fabrication. The effects of the process variables on the cross-sectional shape and surface quality of the deposited patterns are examined using field emission scanning electron microscopy (FE-SEM) and an optical microscope.

• 한국분말재료학회지
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• 제28권3호
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• pp.233-238
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• 2021

Iron-based amorphous powder attracts increasing attention because of its excellent soft magnetic properties and low iron loss at high frequencies. The development of an insulating layer on the surface of the amorphous soft magnetic powder is important for minimizing the eddy current loss and enhancing the energy efficiency of high-frequency devices by further increasing the electrical resistivity of the cores. In this study, a hybrid insulating coating layer is investigated to compensate for the limitations of monolithic organic or inorganic coating layers. Fe₂O₃ nanoparticles are added to the flexible silicon-based epoxy layer to prevent magnetic dilution; in addition TiO₂ nanoparticles are added to enhance the mechanical durability of the coating layer. In the hybrid coating layer with optimal composition, the decrease in magnetic permeability and saturation magnetization is suppressed.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.538-544
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• 2000

The laser patterning of sputter-deposited CoNdZr/Cu/CoNbZr multi-layered films had been tried using Nd:YAG laser. However generally it is very difficult to remove metal films because of their high reflectance of the laser on the surfaces. As a counterproposal for this problem authors for the first time tried to deposit energy-absorbing layers on the metal films and then irradiated the laser on the surfaces of energy-absorbing layers. Here the energy-absorbing layers consisted of laser energy-absorbing fine powders and binding polymers. Three kinds of powders for the energy-absorbing layers had been used to see the difference in the pattern formation with the degree of laser energy absorption. They were electrically conductive silver powders insulating BaTiO$_3$powder and semiconducting carbon powder. Remarkable difference in width of the formed pattern and the roughness of pattern edge were observed with the characteristic of the powder for the energy-absorbing layer. The pattern width using carbon paste was about three times larger than that using BaTiO$_3$paste. It was observed that the energy-absorbing layer with carbon was the most effective on this micro-patterning.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1707-1709
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• 1999

Insulating thin films for strain gauge application, such as $SiO_2$ single layers and $SiO_2/Si_3N_4$ multilayers, are deposited by using both PECVD and RF magnetron sputtering techniques. Micro-structural analysis and electrical characterization are carried out on those films. It has been observed that PECVD films have a smoother surface and a denser micro-structure than sputter films. It should be also found out that the electrical insulation property of $SiO_2$ film can be significantly improved by adding the $Si_3N_4$ layer.

• 한국세라믹학회지
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• 제24권3호
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.312-315
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• 2004

The monolayer of oxygen atoms sandwiched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multilayer Si-O structure forms a new type of superlattice, semiconductor-atomic superlattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (Ⅰ-Ⅴ) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.913-919
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• 2000

We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V]. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.147-149
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• 2002

Recently, the study on development of electrical and electronic device is done to set miniature, high degrees of integration and efficiency by using inorganic materials the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.136-138
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• 1990

In developing, microscopic scale electrical and electronic devices, molecular level Insulators and functional electric conductors are fundamental. The properties of the electrical-insulating thin film materials are very much dependent on defects and electron transfer rate. There are number of companies which try to reduce defects and control electrical conductivity. Functional electrical conductors are more demanding subject in electrical fields. Reorganization energy around the sites that generate the electrons and holes are very important for the electron transfer in the organic thin layers.

• Journal of Korean Vacuum Science & Technology
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• 제5권1호
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• pp.7-10
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• 2001

Ion induced secondary electron emission coefficients γ of protecting layers of an AC plasma display panel(AC-PDP) have been measured. In order to solve the surface charging effect during the measurement at insulating samples like MgO, a new method with the patterned gold line charge neutralization has been introduced. The measurement was performed at the samples, MgO and MgO+MgF$_2$, which showed a great difference in the firing voltage between the two protecting layers. The γ value has been compared with the firing voltage Vf of the AC-PDP with the same protecting layer. Correct relationship between γ and Vf has been observed. Thus, the patterned gold line method has been proven to be successful for the measurement of the secondary electron emission yield at insulator sample surfaces.