• Progress in Superconductivity and Cryogenics
• /
• v.14 no.2
• /
• pp.32-35
• /
• 2012

The objective of the present work is to develop a precise instrument for measuring the thermal property of insulating material over a temperature range from 30 K to near room temperature by utilizing a cryocooler. The instrument consists of two thermal links, a test sample, heat sink, heat source and vacuum vessel. The cold head of the cryocooler as a heat sink is thermally anchored to the thermal link and used to bring the apparatus to a desired temperature in a vacuum chamber. An electric heater as a heat source is placed in the middle of test sample for generating uniform heat flux. The entire apparatus is covered by thermal shields and wrapped in multi-layer insulation to minimize thermal radiation in a vacuum chamber. For a supplied heat flux the temperature distribution in the insulating material is measured in steady and transient state. The thermal conductivity of insulating material is measured from temperature difference for a given heat flux. In addition, the specific heat of insulating material is obtained by solving one-dimensional heat diffusion equation.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1240_1241
• /
• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.117-122
• /
• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.211-211
• /
• 2009

YBCO coated conductor can change the stabilization layer for purpose and it leads advantages in Improvement of tape's critical properties and Application. Such properties rise possibility of using YBCO coated conductor for Superconductor Fault Current Limiter, therefore, we investigate changing properties under over current condition and limiting characteristics. In this study, YBCO coated conductor's current limiting characteristic stainless steel stabilization layer under condition of changing conductor's insulating layer. Consequently, the resistance followed insulating layer so we know that limiting characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.83-89
• /
• 1991

The partial discharge properties of interface layer in Mica-Epoxy composite, which has been mainly used for the coil insulating material of high voltage machinery, are different from those of resins due to the abnormal interface layer to be presented between inorganic material and resin. Accordingly, the study on discharge of interface in composite insulting system is strongly requsted for not only an increasing of insulating strength, but also the basical information of diagnosis system for high voltage equipment. As a result, it has been confirmed that the interface is an abnormal resin layer and the contact states at interface is depended upon the density of silane aqueous solution. Pulse frequency at abnormal interface shows a linear increasing with enlargement of discharge quantity. Whereas, in case of normal interface, pulse frequency property represents exponential increasing at the point of saturating. A life model can be diagramed from results of time dependance of skewness, and a survival life time can be quantified from the life model suggested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.85-88
• /
• 1998

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2006.05a
• /
• pp.618-621
• /
• 2006

This paper is to investigate temperature history of cold weather concrete depending on insulation curing sheet kinds. Insulating effect according to curing sheet is shown in order of 5 layer bubble sheet, combination of PE form and 3 layer bubble sheet and 3 layer bubble sheet. It maintained above $10^{\circ}C$ of minimum temperature until the completion of initial curing period when bubble curing sheet was supplied regardless of curing sheet kinds. Five layer bubble curing sheet secure higher curing temperature than any other curing sheet applied in this experiment by as much as $2{\sim}3^{\circ}C$, which performed remarkable insulation effect. Concrete applied with curing sheet secured above $65^{\circ}D{\cdot}D$ of maturity, at which concrete had 5MPa of compressive strength at 3 days.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.12 no.4
• /
• pp.35-40
• /
• 1975

The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

• Journal of Electrical Engineering and Technology
• /
• v.13 no.1
• /
• pp.387-392
• /
• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.1
• /
• pp.20-23
• /
• 2013

When applying superconducting wire to power machines, an investigation needs to be carried out on the characteristics of wire phase changes in connection with the insulating layer. This study examined trends in the increase of the wire's resistance and the characteristics of its recovery from quenching by a current-applied cycle at temperatures of 90 K, 180 K, and 250 K. The procedure was conducted based on the thickness and presence (or absence) of the insulating wire layers. To achieve this, YBCO thin-film wires with the same critical temperatures were prepared with copper and stainless steel stabilizing layers. At levels (-one, three, and five-), with superior performance, polyimide pressure-sensitive adhesive tape was attached to the wires at a very low temperature. The eight prepared test samples were wound around the linear frames. The wire's voltage and current created from the phase change characteristics were measured at the wire's prescribed temperature, using the four-point probe method. The wire's resistance and recovery characteristics were examined for each cycle at temperatures of 90 K, 180 K, and 250 K.