• Nuclear Engineering and Technology
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• v.44 no.5
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• pp.523-534
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• 2012

The objective of this study was to experimentally investigate the effect of heat curing methods on the temperature history and strength development of slab concrete exposed to $-10^{\circ}C$. The goal was to determine proper heat curing methods for the protection of nuclear power plant structures against early-age frost damage under adverse (cold) conditions. Two types of methods were studied: heat insulation alone and in combination with a heating cable. For heat curing with heat insulation alone, either sawdust or a double layer bubble sheet (2-BS) was applied. For curing with a combination of heat insulation and a heating cable, an embedded heating cable was used with either a sawdust cover, a 2-BS cover, or a quadruple layer bubble sheet (4-BS) cover. Seven different slab specimens with dimensions of $1200{\times}600{\times}200$ mm and a design strength of 27 MPa were fabricated and cured at $-10^{\circ}C$ for 7 d. The application of sawdust and 2-BS allowed the concrete temperature to fall below $0^{\circ}C$ within 40 h after exposure to $-10^{\circ}C$, and then, the temperature dropped to $-10^{\circ}C$ and remained there for 7 d owing to insufficient thermal resistance. However, the combination of a heating cable plus sawdust or 2-BS maintained the concrete temperature around $5^{\circ}C$ for 7 d. Moreover, the combination of the heating cable and 4-BS maintained the concrete temperature around $10^{\circ}C$ for 7 d. This was due to the continuous heat supply from the heating cable and the prevention of heat loss by the 4-BS. For maturity development, which is an index of early-age frost damage, the application of heat insulation materials alone did not allow the concrete to meet the minimum maturity required to protect against early-age frost damage after 7 d, owing to poor thermal resistance. However, the combination of the heating cable and the heat insulating materials allowed the concrete to attain the minimum maturity level after just 3 d. In the case of strength development, the heat insulation materials alone were insufficient to achieve the minimum 7-d strength required to prevent early-age frost damage. However, the combination of a heating cable and heat insulating materials met both the minimum 7-d strength and the 28-d design strength owing to the heat supply and thermal resistance. Therefore, it is believed that by combining a heating cable and 4-BS, concrete exposed to $-10^{\circ}C$ can be effectively protected from early-age frost damage and can attain the required 28-d compressive strength.

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.127-131
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• 2002

We fabricated MTJ devices that have doubly oxidized tunnel barrier using plasma oxidation method to from oxidized AlO$\sub$x/ tunnel barrier. Doubly oxidation I, which sputtered 10 ${\AA}$-bottom Al layer and oxidized it with oxidation time of 10 s. Subsequent sputtering of 13 ${\AA}$-Al was performed and the metallic layer was oxidized for 50, 80 and 120 s., respectively. Doubly oxidation II, which sputtered 10 ${\AA}$-bottom Al layer and oxidized it varying oxidation time for 30∼120 s. Subsequent sputtering of 13 ${\AA}$-Al was performed and the metallic layer was oxidized for 210 sec. Double oxidation process specimen showed MR ratio of above 27％ in all experiment range. Singly oxidation process. 13 ${\AA}$-Al layer and oxidized up to 210 s, showed less MR ratio and more narrow process window than those of doubly oxidation. Cross-sectional TEM images would that doubly oxidized barrowers were thinner and denser than singly oxidized ones. XPS characterization confirmed that doubly oxidation of Fe with bottom insulating layer. As a result, doubly oxidation could have superior MR ratio in process extent during long oxidation time because of preventing oxidation of bottom magnetic layer than singly oxidation.

• Computers and Concrete
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• v.15 no.6
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• pp.951-972
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• 2015

The focus of the present study is to investigate both local and global behaviour of a precast concrete sandwich panel. The selected prototype consists of two reinforced concrete layers coupled by a system of cold-drawn steel profiles and one intermediate layer of insulating material. High-definition nonlinear finite element (FE) models, based on 3D brick and 2D interface elements, are used to assess the capacity of this technology under shear, tension and compression. Geometrical nonlinearities are accounted via large displacement-large strain formulation, whilst material nonlinearities are included, in the series of simulations, by means of Von Mises yielding criterion for steel elements and a classical total strain crack model for concrete; a bond-slip constitutive law is additionally adopted to reproduce steel profile-concrete layer interaction. First, constitutive models are calibrated on the basis of preliminary pull and pull-out tests for steel and concrete, respectively. Geometrically and materially nonlinear FE simulations are performed, in compliance with experimental tests, to validate the proposed modeling approach and characterize shear, compressive and tensile response of this system, in terms of global capacity curves and local stress/strain distributions. Based on these experimental and numerical data, the structural performance is then quantified under various loading conditions, aimed to reproduce the behaviour of this solution during production, transport, construction and service conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.187-187
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• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.6
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• pp.642-650
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• 2016

One of the most feasible solution for reducing the excessive energy consumption and carbon dioxide emission is usage of more efficient fuel such as hydrogen. As is well known, there are three viable technologies for storing hydrogen fuel: compressed gas, metal hydride absorption, and cryogenic liquid. In these technologies, the storage for liquid hydrogen has better energy density by weight than other storage methods. However, the cryogenic liquid storage has a significant disadvantage of boiling losses. That is, high performance of thermal insulation systems must be studied for reducing the boiling losses. This paper presents an experimental study on the effective thermal conductivities of the composite layered insulation with aerogel blankets($Cryogel^{(R)}$ Z and $Pyrogel^{(R)}$ XT-E) and Multi-layer insulation(MLI). The aerogel blankets are known as high porous materials and the good insulators within a soft vacuum range($10^{-3}{\sim}1$ Torr). Also, MLI is known as the best insulator within a high vacuum range(<$10^{-6}{\sim}10^{-3}$ Torr). A vertical axial cryogenic experimental apparatus was designed to investigate the thermal performance of the composite layered insulators under cryogenic conditions as well as consist of a cold mass tank, a heat absorber, annular vacuum space, and an insulators space. The composite insulators were laminated in the insulator space that height was 50 mm. In this study, the effective thermal conductivities of the materials were evaluated by measuring boil-off rate of liquid nitrogen and liquid argon in the cold mass tank.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.296-300
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• 1999

Cross-shape structures of spin tunneling junctions were fabricated using DC magnetron sputtering and metal masks. The film structures were $substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al_2O_3/CoFe/NiFe$ and $substrate/Ta/NiFe/CoFe/ Al_2O_3/CoFe/NiFe/FeMn/NiFe$. Fabrication conditions of insulating layer ($Al_2O_3$) and thickness and sputtering power of each film layer were varied, and maximum magnetoresistance ratio of 24.3 % was obtained. Magnetic characteristic variations in the above mentioned two structures and two types of substrates (Corning glass 7059 and Si(111)) were compared. Annealing of the junctions was performed to find out magnetic characteristic variations expected from the device fabrication. Magneoresistance Ratio were observed to maintain as-deposited value up to 150 $^{\circ}C$ annealing and then to drop rapidly after 180 $^{\circ}C$ annealing.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.1
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• pp.53-59
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• 1999

The ceramic capacitor was fabricated by $(Ba_{0.85}Ca_(0.15)TiO_3+ZnO$ + ZnO(from 0.1 to 0.4 mol ratio). The electrical and structural properties of ceramic capacitor for high voltage application was studied in this study. The relative rensity of ceramics capacitor has shown high in all specimen. The grain was a small size from $1.0[\mum]$ to $1.22[\mum]$ and it was increased with ZnO at 0.3 mol ratio. It was stabilized that the temperature coefficient of ceramic capacitor to change temperature had below 100[ppm] at 0.12~10[kHz]. The dielectric reIaxation time was decreased by interface polarization over $110[^{\circ}C]$ and it was increased by space polarization of paraelectric layer below $110[^{\circ}C]$. The insulating layer was increased with ZnO and dielectric constant to voltage was stabilized by 0.1[%].0.1[%].