• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.159-163
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• 2003

In this study, the DC dielectric breakdown of epoxy composites used for PCB material was experimented and then its data were simulated by Weibull distribution equation. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. From the analysis of Weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5[kV/mm].

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.112-115
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• 2002

The effects of processing aids(P.A.) in semicoductive compounds(S.C.) with highly loaded carbon black for extra high voltage cables were investigated. The processability of S.C. is improved as the contents of P.A. increased, however, the electrical, mechanical properties and smoothness of S.C. grew worse, especially for the S.C. which contains 5wt% of P.A., the volume resistivity after heat cycle which shows long term reliability increased about three times after 15cycles compared to the S.C. which contains no P.A. We inferred that it is caused by the action of P.A. as the insulating sites, thermal expansion of polymer matrix which leads the length between carbon blacks to shorten, and the decrease of degree of crosslinking. The change of ion contents which means cleanliness of S.C. is not occured regardless of the addition of P.A.

• 전기학회논문지P
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• 제58권3호
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• pp.357-361
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• 2009

This study performed analysis on the thermal pattern and current characteristics of an LED ((Light Emitting Diode) street lamp. It did this using a TVS (Thermal Video System) to analyze the LED street lamp's thermal pattern, and measured its characteristics using an oscilloscope. The ambient temperature and humidity during the experiment were maintained at $24{\pm}2[^{\circ}C]$ and 50~60[%]. The capacity of the LED street lamp was 120[W] and nine sets of modules were arranged at uniform intervals. On one module, 24 LED lamps were arranged in a radial pattern. The analysis of the thermal diffusion pattern at the front of the LED lamp showed that the maximum surface temperature was approximately $34[^{\circ}C]$. In addition, there was almost no change in the temperature of the upper cover, and the temperature at the side showed a uniform thermal diffusion pattern. The surface temperature of the converter converting AC to DC increased to approximately $46[^{\circ}C]$. The analysis results of the thermal characteristics of one LED indicated uniform thermal characteristics for an initial eight minutes. However, the temperature at the center of the LED increased to approximately $82[^{\circ}C]$ after 12 minutes had elapsed. It can be seen from this that the temperature at the center of the LED was higher than the allowable temperature, $70[^{\circ}C]$ of the insulating material for general electrical devices. Therefore, it is necessary to design a lamp in such a way that the plastic insulating material does not come into contact with or get close to the LED lamp. The voltage of the LED lamp converted by the AC/DC converter was measured at DC 27[V] and the current was DC 13[A]. Consequently, it can be seen that in order to secure an adequate light source, it is important to supply a stable current that was greater than the current of other light sources. Therefore, appropriate radiation of heat is required to secure the stability and reliability of the system.

• 한국초전도ㆍ저온공학회논문지
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• 제17권1호
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• pp.44-47
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• 2015

High voltage superconducting apparatuses have been developed presently around the world under AC and DC sources. In order to improve electrical reliability of superconducting apparatuses with AC and DC networks, a study on the DC as well as the AC electrical breakdown characteristics of cryogenic insulations should be conducted for developing a high voltage superconducting apparatus. Recently, a sub-cooled liquid nitrogen cooling system is known to be promising method for developing a high voltage superconducting apparatus. A sub-cooled liquid nitrogen cooling system uses gaseous nitrogen to control the pressure and enhance the dielectric characteristics. However, the dielectric characteristics of gaseous nitrogen are not enough to satisfy the grade of insulation for a high voltage superconducting apparatus. In this case, the application of solid insulating barriers is regarded as an effective method to reinforce the dielectric characteristics of a high voltage superconducting apparatus. In this paper, it is dealt with a barrier effect on the DC and AC dielectric characteristics of gaseous nitrogen with respect to the position and number of solid insulating barriers. As results, the DC and AC electrical breakdown characteristics by various barrier effects is verified.

• 조명전기설비학회논문지
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• 제24권7호
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• pp.41-46
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• 2010

With the improvement of industrial society, high quality electrical energy, simplification of operation and maintenance, and ensuring reliability are being required. Also we request an urgent change from $SF_6$ gas to an environment-friendly gas insulation material. In this paper, the experiments of breakdown characteristics by pressure and gap change of $N_2/O_2$ mixture gas through a GIS (Gas Insulated Switchgear) model were described. This paper reviews basic data of the surface discharge characteristics for Teflon resin in not only pure $N_2$, $N_2:O_2$ mixture gas as being focused on environmentally-friendly insulating gas, but also $SF_6$. Also, insulation characteristics by breakdown voltage and surface discharge voltage of $N_2:O_2$ mixture gas in the experimental chamber were studied.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.379-383
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• 2015

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as $SiO_2$ instead of $Al_2O_3$ properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.626-628
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• 1992

GCB(Gas Circuit Breaker) and GIS(Gas Insulated Switchgear) using $SF_6$ are worldwidely applied over 72.5KV classes. It Is known that $SF_6$ gas has the most superior characteristics among the extingushing and insulating media. Our Company has produced GCB and GIS from early 1980's and at present, we are producing 362KV 40KA class which is the highest voltage in our country. According to change KEPCO's standards (ESB standards), our company has redeveloped and tested for all productions type from 1989. During redeveloping, we largely contribute raise reliability of power system, through all the more improvement for performance and quality of manufactures. One of them, we developed 170KV 50KA GCB with common three-pole operating mechanism and sucessfully completed test of KERI under KEPCO presence, at first in our country. Thus, we announce the outline of it.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.33-37
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• 1999

We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25$\times$25 pixels in which polycrystalline silicon fie이 emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolityically intergrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-stage currents even though at high drain voltages. The intergrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25V. With the prototype AMFED we have displayed character patterns by low-boltage pertipheral circuits of 15 V in a high vacuum chamber.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.49-53
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• 2010

Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.