• 전기저널
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• 통권280호
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• pp.64-70
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• 2000

파워디바이스는 산업$\cdot$전력$\cdot$교통$\cdot$정보 등 여러 분야에서 사용되고 그 기기들의 성능은 이 파워디바이스의 성능에 의해 크게 좌우된다. 특히 고도 정보화시대가 되는 21세기에는 전력수요가 점점 더 증가될 것이기 때문에 인버터화 등에 의한 생에너지 대책과 클린에너지 등에 의한 신에너지의 창출이 중요한 과제가 되고 있다. 한편, 지구환경 보호면에서 전기자동차 등의 환경고려형 장치의 보급이 활발해질 것이 예상된다. 이와 같은 사회환경 속에서 파워 일렉트로닉스를 지탱하는 소자로서 파워디바이스는 점점 더 그 역할의 중요성이 커지고 있다. 최근의 파워디바이스로서는 디스크리트, 모듈, IPM(Intelligent Power Module)등 여러 가지의 디바이스가 출현하고 있는데 그 성능을 결정하는 중심이 되는 것이 파워디바이스 칩이다. 파워디바이스 칩 자신도 급속히 진화하여 현재는 MOS계 파워디바이스 칩이 주류를 이루고 있다. 그 중에서도 사용하기 쉽다는 면에서 MOSFET와 IGBT(Insulated Gate Bipolar Transistor)가 주로 실용화되고 있으며, 미세가공기술과 라이프타임 제어기술의 진전에 따라 현저한 성능개선이 진행되고 있다. 한편, 공업용 대용량인버터나 전력응용에서 요구되는 고내압$\cdot$대용량 영역에서는 당분간 저손실이라는 의미에서 바이폴라계의 사이리스터형 디바이스가 주류로 사용되고, 이 영역에서는 GTO에 대체하는 소자로서 GCT(Gate Commutated Turn-off)사이리스터가 개발되어 그 응용이 확대될 것이 기대되고 있다. 또한 전압형 인버터장치에서는 IGBT와 GCT등의 스위칭디바이스와 함께 환류용 다이오드(FWD)가 필요하며 이 FWD의 특징 개선도 스위칭디바이스의 개선과 병행하여 추진되고 있다.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.758-763
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.176-179
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication. communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result. the maximum laser output power of 26 [W] is obtained at the resonant frequency of about 13 [kHz].

• Journal of Power Electronics
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• 제12권1호
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• pp.120-127
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• 2012

Fault diagnosis technique of electrical drives is becoming more and more important, since voltage fed converter system has become industrial standard in many applications. Many studies have been conducted an inverter fault diagnosis for induction motors. However, there are few researches about fault diagnosis of 3-phase ac/dc PWM (Pulse Width Modulation) converter compared to the dc/ ac inverter. The ac/dc converter is the opposite of dc/ac inverter at current flow. Also, inverter and converter have different current patterns under the same condition of IGBT (Insulated gate bipolar transistor) open switch fault. Therefore, it is difficult to apply intact diagnosis methods of inverter to the converter. This paper proposes modified fault detection methods for IGBT open switch fault in 3-phase ac/dc PWM converter by modifying established fault diagnostic methods for dc/ac inverters.

• 한국안전학회지
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• 제34권1호
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• pp.21-26
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• 2019

This paper is purposed to develop hardware for controlling abnormal temperature that can occur environment and component itself in PCS. In order to be purpose, the hardware which is four part(sensing, PLC, monitoring and output) keep detecting temperature for critical components of PCS and can control the abnormal temperature. Apply to the hardware, it is selected to PV power generation facilities of 20 kW in Cheong-ju city and measured the data for one year in 2017. Through the temperature data, it is found critical components of four(discharge resistance, DC capacitor, IGBT, DSP board) and entered the setting value for operating the fan. The setting values for operating the fan are up to $130^{\circ}C$ in discharge resistance, $60^{\circ}C$ in DC capacitor, $55^{\circ}C$ in IGBT and DSP board. The hardware is installed at the same PCS(20 kW in Cheong-ju city) in 2018 and the power generation output is analyzed for the five days with the highest atmospheric temperature(Clear day) in July and August in 2017 and 2018 years. Therefore, the power generation output of the PV system with hardware increased up to 4 kWh.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.257-260
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• 2003

We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) $BV_ceo$.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.644-649
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• 2001

This paper proposes a soft-switching current -source inverter for photovoltaic power system, which has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an L-C resonant circuit. The operation of proposed system was analyzed by a theoretical approach with equivalent circuits and verified by computer simulations with SPICE and experimental works with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the power system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.627-630
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• 1991

This study is about vector controlled inverter for high quality elevator drive that is to improve the settling accuracy of elevator car and passenger's comfort in commercial buildings. In this study, an instantaneous space vector control type inverter was used to reduce the torque ripple ant to improve the velocity follow-up. This method calculates Instantaneous actual output torque and flux of induction motor by voltage and current, then compares them with a reference values by a speed regulator. The outputs of comparators select a switching mode, for an optimal voltage vector. Also, this study used IGBT (Insulated Gate Bipolar-Transistor), a high speed switching element, to reduce sound noise level, and DSP (Digital Signal Processor) was used to improve the reliability of the control circuit by fully digitalization.

• Journal of Power Electronics
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• 제8권1호
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• pp.81-90
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• 2008

This paper presents an investigation of a voltage and frequency controller for an isolated asynchronous generator (IAG) driven. by a wind turbine and supplying 3-phase 4-wire loads to the isolated areas where a grid is not accessible. The control strategy is based on the indirect current control of the VSC (voltage source converter) using the frequency PI controller. The proposed controller consists of three single-phase IGBT (Insulated Gate Bipolar Junction Transistor) based VSC, which are connected to each phase of the IAG through three single phase transformers and a battery at their DC link. The controller has the capability of controlling reactive and active powers to regulate the magnitude and frequency of the generated voltage, harmonic elimination, load balancing and neutral current compensation. The proposed isolated system is modeled and simulated in MATLAB using Simulink and PSB (Power System Block-set) toolboxes to verify the performance of the controller.

• 한국초전도ㆍ저온공학회논문지
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• 제3권2호
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• pp.39-43
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• 2001

For several decades researches and development on superconducting magnetic energy storage(SMES) system have been done for efficient electric power management. Korea Electrotechnology Research Institute (KERI) have developed of a 1MJ , 300kVA SMES System for improving power quality in sensitive electric loads. It consists of an IGBT (Insulated Gate Bipolar Transistor) based power conversion module. NbTi mixed matrix conductor superconducting magnet and a cryostat with HTS current leads. We developed the code fro design of a SMES magnet. Which could find the parameters of the SMES magnet having minimum amount of superconductors for the same store denerby. and designed the 1 MJ SMES magnet by using it . And we have design and fabricated cryostat with kA class HTS current leads for a 1 MJ SMES System. This paper describes the design fabrication and test results for a 1MJ SMES System.