• Title/Summary/Keyword: Input Mobility

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Optimization Design and Performance Evaluation of Flight Control Computer Architecture for UAV (무인항공기용 비행제어컴퓨터 아키텍처 최적화 설계 및 성능 평가)

  • Woo-ri-ul Kim;Dong-hyun Song;Sang-woong Park;Tae-sik Ahn
    • Journal of Advanced Navigation Technology
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    • v.27 no.6
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    • pp.763-769
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    • 2023
  • Flight control computers for unmanned aerial vehicles are avionics that require high reliability and are generally designed to be multiplexed for margins on failures. The multiplexed flight control computer should include an interface through discrete signals and CCDL for synchronization and fault separation between channels. With the development of unmanned aerial vehicle technology, various types of platforms such as AAM and LPI are being developed in the private and military, which require advanced control performance for high-performance flight control and SWaP optimization of onboard equipment. In this paper, we designed a optimized flight control computer architecture for unmanned aerial vehicles for multiplexing processing and performed a software design for input and output control. In addition, input/output processing performance was evaluated through the implemented flight control computer and input/output software.

A Low-Power Level Shifter Using Low Temperature Poly-Si TFTs (저온 Poly-Si TFT를 이용한 저소비전력 레벨 쉬프터)

  • Ahn, Jeong-Keun;Choi, Byong-Deok;Kwon, Oh-Kyong
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.747-750
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    • 2005
  • In this paper, we propose a new level shifter circuit for reducing power consumption. The concept of the proposed level shifter is to use capacitive coupling effect to reduce short circuit current. The power consumption of the proposed level shifter is reduced up to 50%, compared to the conventional level shifter. Especially the proposed level shifter circuit works well with low temperature poly-Si (LTPS) TFTs. It can operate on low input voltage even with low-mobility, high and widely-varying threshold voltage of LTPS TFT.

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Contamination of Stream and Reservoir Waters with Arsenic from Abandoned Gold Mine

  • Lee, Jin-Yong;Kim, Hee-Joung;Yang, Jai-E.
    • Environmental Engineering Research
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    • v.13 no.1
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    • pp.33-40
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    • 2008
  • Levels of arsenic in stream and reservoir waters affected by an abandoned gold mine were examined. The abandoned mine has been left without proper civil and remedial works preventing potential environmental hazards. Field and laboratory chemical analyses revealed that the stream waters downgradient from the mine area were severely contaminated with arsenic and furthermore the reservoir water, 2-3 km away from the mine, also contained substantial levels of As, far exceeding the Korean stream water standard. Relatively higher pH values (6.5-9.4) enhanced mobility of As and mainly sustained substantial As concentration in waters. Chemistries of the stream water, groundwater and reservoir water were dominated by two main factors including effects of mine effluent and anthropogenic agricultural activities. Considering that there has been a substantial As input to the reservoir and the reservoir water has been used for agricultural and domestic uses, immediate remedial works are essentially required.

Organic Integrated Circuits based on Pentacene TFTs

  • Xu, Yong-Xian;Kong, Sang-Bok;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1680-1682
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    • 2007
  • The integrated circuits such as inverters, ring oscillators, NAND and NOR gates, and rectifiers were fabricated on PEN substrate by using pentacene TFTs. The OTFTs used bottom contact structure and produced the average mobility of $0.26\;cm^2/V.sec$ and on/off current ratio of $10^5$. All circuits worked successfully like the simulation results. Especially, the rectifier was able to operate up to 1 MHz input signals, and ring oscillator exhibited oscillation frequency of 1MHz at-40V.

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Structural analysis of $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$As P-HEMTs reverse engineering (Reverse Engineering을 이용한 $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$As P-HEMTs의 구조적 분석)

  • 김병헌;황광철;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.255-258
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    • 2001
  • In this paper, DC and small signal characteristics with different physical parameters are expected for p-HEMTs (Pseudomorphic High Electron Mobility Transistors) with different temperatures ranging from 300K to 623K which are widely used for a low noise and/or ultra high frequency device. A device of 0.2$\times$200 ${\mu}{\textrm}{m}$$^2$dimension having very low noise has been chosen to extract the experimental data. Theoretical prediction has been obtained using a simulaor(HELENA) which needs experimental input data extracted from reverse engineering process. From the results, relation between structural parameters and temperature dependency of electrical characteristics are qualitatively explained to use in the design of descrete and integrated circuits to guarantee the optimal operation of the system.

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A Rolling Image based Virtual Keyboard Resilient to Spyware on Smartphones (스마트폰 환경에서 스파이웨어에 저항하는 동적 이미지 기반 가상 키보드 기법)

  • Na, Sarang;Kwon, Taekyoung
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.23 no.6
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    • pp.1219-1223
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    • 2013
  • Due to the fundamental features of smartphones, such as openness and mobility, a great deal of malicious software including spyware can be installed more easily. Since spyware can steal user's sensitive information and invade privacy, it is necessary to provide proper security mechanisms like secure virtual keyboards. In this paper, we propose a novel password input system to resist spyware and show how effectively it can reduce the threats.

Development and Implementation of Real Time Multibody Vehicle Dynamics Model (실시간 다물체 차량 동역학 모델 개발 및 구현)

  • O, Yeong-Seok;Kim, Seong-Su
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.5
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    • pp.834-840
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    • 2001
  • A real time multibody vehicle dynamics model has been developed and implemented using a subsystem synthesis method based on recursive formulation. To verify real time simulation capability the developed model has been applied to HMMWV(High Mobility Multipurpose Wheeled Vehicle) with steering system. For the kinematically driven steering system, the coupled front suspension-steering subsystem can be decoupled into two SLA suspension subsystems, which improves the efficiency of simulation. To investigate theoretical efficiency, operational counting method has been also employed to compare the proposed model with the conventional recursive dynamics model. Various simulations such as unsymmetric bump run, step steering(J-turn) and sine steering input test have been carried out to verify the real time feasibility of the proposed model.

High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

  • Chang, Dong-Pil;Yom, In-Bok
    • Journal of electromagnetic engineering and science
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    • v.14 no.4
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    • pp.342-345
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    • 2014
  • An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

Threshold voltage control in dual gate ZnO-based thin film transistors

  • Park, Chan-Ho;Lee, Ki-Moon;Lee, Kwang-H.;Lee, Byoung-H.;Sung, Myung-M.;Im, Seong-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.527-530
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    • 2009
  • We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20 nm-thick $Al_2O_3$ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at $200^{\circ}C$. Whether top or bottom gate is biased for sweep, our TFT almost symmetrically operates under a low voltage of 5 V showing a field mobility of ~0.4 $cm^2/V{\cdot}s$ along with the on/off ratio of $5{\times}10^4$. The threshold voltage of our DG TFT was systematically controlled from 0.5 to 2.0 V by varying counter gate input from +5 to -2 V.

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A New Organic Thin-Film Transistor based Current-driving Pixel Circuit for Active-Matrix Organic Light-Emitting Displays (유기박막트랜지스터(OFTF)를 이용한 AMOLED 픽셀 보상회로 연구)

  • Shin, A-Ram;Bae, Young-Seok;Hwang, Sang-Jun;Sung, Man-Young
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.22-23
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    • 2006
  • A new current-driving pixel circuit for active-matrix organic light-emitting diodes (AMOLEDs), composed of four organic thin-film transistors (OTFTs) and one capacitor, is proposed using a current scaling method. Designing pixel circuits with OTFTs has many problems due to the instability of the OTFT parameters with still unknown characteristics of the material. Despite the problems in using OTFTs to drive the pixel circuit, our work could be set as a goal for future OTFT development. The simulation results show enhanced linearity between input data and OLEO luminescence at low current levels as well as successfully compensating the variation of the OTFTs, such as the threshold voltage and mobility.

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