Structural analysis of $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$As P-HEMTs reverse engineering

Reverse Engineering을 이용한 $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$As P-HEMTs의 구조적 분석

In this paper, DC and small signal characteristics with different physical parameters are expected for p-HEMTs (Pseudomorphic High Electron Mobility Transistors) with different temperatures ranging from 300K to 623K which are widely used for a low noise and/or ultra high frequency device. A device of 0.2$\times$200 ${\mu}{\textrm}{m}$$^2$dimension having very low noise has been chosen to extract the experimental data. Theoretical prediction has been obtained using a simulaor(HELENA) which needs experimental input data extracted from reverse engineering process. From the results, relation between structural parameters and temperature dependency of electrical characteristics are qualitatively explained to use in the design of descrete and integrated circuits to guarantee the optimal operation of the system.