• Journal of Technologic Dentistry
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• v.29 no.1
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• pp.121-131
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• 2007

A preparation process's conditions of aqueous sol which contains anatase-type nano titania particles with photocatalyic properties was established by using Yoldas process, so called, DCS(Destabilization of Colloidal Solution) process in this study. And crystal size change and phase transformation of titania particles in aqueous titania sol depending on reaction conditions was investigated by a light scattering method and XRD analysis of frozen dried powders, respectively. This sol with photo catalytic nano titania particles was used to the following hydrophilic hybrid coating film's fabrication and its properties was evaluated. Subsequently, for coating film using the above mentioned aqueous titania sol, non-aqueous titania sol was prepared without any chemical additives and its time stability according to aging time was investigate. By using the above mentioned aqueous titania sol and non-aqueous sol, a complex oxide coating sol for metal and ceramic substrate and a organic-inorganic hybrid coating sol for polymer substrate was prepared and it's hydrophilicity depending on UV irradiation conditions was evaluated. As a conclusions, the following results were obtained. (1)Aqueous titania sol The average particle size of titania in formed aqueous titania sol was distributed between 20$\sim$90nm range depending on reaction conditions. And the crystal phase of titania powders obtained by frozen drying method was changed from amorphous state to anatase and subsequently transformed to rutile crystal phase and it is attributed to concentration gradient in aqueous sol. (2)Non-aqueous titania sol Non-aqueous titania sol was prepared using methanol as a solvent and a little distilled water for hydrolysis and nitric acid as a catalyst were used. The obtained non-aqueous titania sol was stable at room temperature for 20 days. Additionally, non-aqueous titania sol with addition of chealating reagent such as acethylaceton and ethylene glycol prolonged the stability of sol by six months. (3)Complex sol and hybrid sol with super hydrophilicity The above mentioned aqueous titania sol as a main photocataylic component and non-aqueous titania sol as a binder for coating process was used to prepare a complex sol used for metal, ceramic and wood material substrate and also to prepare the organic-inorganic hybrid sol for polymer substrate such as polycarbonate and polyethylene, in which process APMS(3-Aminopropyltrimethoxysilane), GPTS(3-Glycidoxypropyl-trimethoxysilane) as a hydrophilic silane compound and HEMA(2-Hydroxyethyl methacrylate) as a forming network in hybrid coating film were used. The hybrid coating film such as prepared through this process showed a superhydrophilicity below 1$10^{\circ}$ depending on processing conditions and a pencil's hardness over 6 H.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.305-305
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• 2012

The organic-inorganic hybrid polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Titaniumchloride (TiCl4) and 1,4-phenylenediamine (PD) were used as monomers to deposit hybrid polymer. Self-terminating nature of TiCl4 and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of hybrid polymer thin films. Layer by layer growth was showed by increasing UV-VIS absorption peak of hybrid polymer thin films.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.146-154
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• 2019

In this study, alkoxysilane-functionalized amphiphilic polymer (AFAP), which have hydrophilic segment and hydrophobic segment functionalized by alkoxysilane group at the same backbone, was synthesized and used as a dispersant and control agent for reaction rate in the preparation of colloidally stable organic-inorganic (O-I) hybrid sols. After reaction with fluorosilane compounds, fluorinated O-I hybrid sols were prepared and coated onto glass substrate to form hydrophobic O-I hybrid coating films through low-temperature curing process. Surface hardness and hydrophobicity of cured coating films were varied with type of solvent and composition of AFAP and fluorinated alkoxysilane compounds. At appropriate solvent and composition of fluorinated alkoxysilane compounds, O-I hybrid coating film having high transparency and surface hardness could be prepared, which could be applicable to cover window of solar cell and displays.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 한국문화재보존과학회:학술대회논문집
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• 2007.05a
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• pp.67-68
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• 2007

Tetraethyl orthosilicate (TEOS)로 형성된 gel의 film 형성 특성을 증가시키기 위하여 (3-glycidyloxypropyl)trimethoxysilane (GPTMS)와 1,2-bis(triethoxysilyl)ethane (BTEOS)를 추가한 유기-무기 복합 용액을 제조하였다. 화강암과 사암에 적용한 후, 접촉 각 및 고형화 시간, silicate의 함유량, 수분 흡수율 및 석재에 적용되었을 때의 공극률 변화를 측정하여 silicate를 기본으로 하는 복합제의 특성을 분석하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1538-1541
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• 2009

Amphiphobic thin films for touched panel application was prepared by $SiO_2$ nanoparticles self-assembled nanostructure. Silicon dioxide nano spheres were prepared by sol-gel method and well dispersed in a solution with surfacants of low surface energy. Nanostrcture thin films were obtained by spin coating technologies.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.162-166
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• 2012

V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).

• Polymer(Korea)
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• v.33 no.6
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• pp.569-574
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• 2009

Organic- inorganic hybrid waterborne polyurethane (PUD) is synthesized by using hybrid polyol consist of carbonate (PCD), ester (PCL), and siloxane (PDSBP) in order to enhance anti-scratch property of PUD film. The diameter of graft type PUD emulsion is bigger than that of linear type PUD due to the graft structure of hydrophobic siloxane chain. The glass transition temperature of linear type PUD increase and the decomposition temperature of linear type PUD decrease with the content of PCD polyol. While, the decomposition temperature of graft type PUD almost same with increasing PDSBP content. The anti-scratch property and pencil hardness of graft type PUD improves as adding PDSBP polyol in the hybrid polyol system. When 9 wt% of PDSBP polyol is mixed, PUD films shows excellent anti-scratch property (~3.3 N), and pencil hardness (> 9 H).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.