• 대한치과기공학회지
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• 제29권1호
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• pp.121-131
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• 2007

A preparation process's conditions of aqueous sol which contains anatase-type nano titania particles with photocatalyic properties was established by using Yoldas process, so called, DCS(Destabilization of Colloidal Solution) process in this study. And crystal size change and phase transformation of titania particles in aqueous titania sol depending on reaction conditions was investigated by a light scattering method and XRD analysis of frozen dried powders, respectively. This sol with photo catalytic nano titania particles was used to the following hydrophilic hybrid coating film's fabrication and its properties was evaluated. Subsequently, for coating film using the above mentioned aqueous titania sol, non-aqueous titania sol was prepared without any chemical additives and its time stability according to aging time was investigate. By using the above mentioned aqueous titania sol and non-aqueous sol, a complex oxide coating sol for metal and ceramic substrate and a organic-inorganic hybrid coating sol for polymer substrate was prepared and it's hydrophilicity depending on UV irradiation conditions was evaluated. As a conclusions, the following results were obtained. (1)Aqueous titania sol The average particle size of titania in formed aqueous titania sol was distributed between 20$\sim$90nm range depending on reaction conditions. And the crystal phase of titania powders obtained by frozen drying method was changed from amorphous state to anatase and subsequently transformed to rutile crystal phase and it is attributed to concentration gradient in aqueous sol. (2)Non-aqueous titania sol Non-aqueous titania sol was prepared using methanol as a solvent and a little distilled water for hydrolysis and nitric acid as a catalyst were used. The obtained non-aqueous titania sol was stable at room temperature for 20 days. Additionally, non-aqueous titania sol with addition of chealating reagent such as acethylaceton and ethylene glycol prolonged the stability of sol by six months. (3)Complex sol and hybrid sol with super hydrophilicity The above mentioned aqueous titania sol as a main photocataylic component and non-aqueous titania sol as a binder for coating process was used to prepare a complex sol used for metal, ceramic and wood material substrate and also to prepare the organic-inorganic hybrid sol for polymer substrate such as polycarbonate and polyethylene, in which process APMS(3-Aminopropyltrimethoxysilane), GPTS(3-Glycidoxypropyl-trimethoxysilane) as a hydrophilic silane compound and HEMA(2-Hydroxyethyl methacrylate) as a forming network in hybrid coating film were used. The hybrid coating film such as prepared through this process showed a superhydrophilicity below 1$10^{\circ}$ depending on processing conditions and a pencil's hardness over 6 H.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.305-305
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• 2012

The organic-inorganic hybrid polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Titaniumchloride (TiCl4) and 1,4-phenylenediamine (PD) were used as monomers to deposit hybrid polymer. Self-terminating nature of TiCl4 and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of hybrid polymer thin films. Layer by layer growth was showed by increasing UV-VIS absorption peak of hybrid polymer thin films.

• 접착 및 계면
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• 제20권4호
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• pp.146-154
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• 2019

본 연구에서는 소수성 PPO 사슬과 친수성 PEO 사슬들이 동시에 존재하고, 반응성 알콕시 실란기를 가지고 있는 알콕시 실란 기능화 양친성 고분자 전구체 (Alkoxysilane-functionalized Amphiphilic Polymer, AFAP)를 합성하여, 이를 TEOS과의 Hydrolysis- Polycondensation 반응에서 분산안정제 및 반응속도 조절제로 이용하여서 유-무기 하이브리드 나노입자가 안정적으로 분산된 졸 (Sol)을 제조하였다. 제조된 Sol에 불소 함유 실란화합물을 혼합·반응하여서 불소함유 유-무기 하이브리드 Sol을 제조하였고, 이를 유리 기재에 코팅하고 저온 경화를 통해 기재위에 경화필름을 형성하였다. 형성된 경화 필름은 AFAP 및 불소 함유 실란화합물의 첨가량, 용매 종류에 따라서 표면 경도 및 발수 특성이 변화하였다. 최적의 용매 및 불소 함유 실란화합물 첨가량에서 태양전지나 디스플레이에 적용가능한 투명하면서도 견고한 유-무기 하이브리드 형태의 코팅필름 형성이 가능하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 한국문화재보존과학회:학술대회논문집
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• 한국문화재보존과학회 2007년도 제25회 학술대회발표 논문집
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• pp.67-68
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• 2007

Tetraethyl orthosilicate (TEOS)로 형성된 gel의 film 형성 특성을 증가시키기 위하여 (3-glycidyloxypropyl)trimethoxysilane (GPTMS)와 1,2-bis(triethoxysilyl)ethane (BTEOS)를 추가한 유기-무기 복합 용액을 제조하였다. 화강암과 사암에 적용한 후, 접촉 각 및 고형화 시간, silicate의 함유량, 수분 흡수율 및 석재에 적용되었을 때의 공극률 변화를 측정하여 silicate를 기본으로 하는 복합제의 특성을 분석하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1538-1541
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• 2009

Amphiphobic thin films for touched panel application was prepared by $SiO_2$ nanoparticles self-assembled nanostructure. Silicon dioxide nano spheres were prepared by sol-gel method and well dispersed in a solution with surfacants of low surface energy. Nanostrcture thin films were obtained by spin coating technologies.

• 한국자기학회지
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• 제22권5호
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• pp.162-166
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• 2012

Fe(100)/MgO(100)/CuPc/Co 자성터널접합 소자의 온도에 따른 전압-전류 특성 변화를 관찰하였다. 화학적 열적 안정성이 비교적 우수한 Cu-Phthalocyanine(CuPc)의 유기박막을 에피성장된 2 nm MgO(100) 박막 위에 2~10 nm 두께로 적층하여 두 강자성 Fe(100)와 Co 전극 사이의 무기-유기 복합 절연격벽으로 이용하였다. 저온 77 K에서 측정된 거대자기저항현상은 CuPc의 두께가 증가함에 따라 급격히 감소하여 10 nm의 CuPc 두께의 경우 전하축적에 의한 쌍안정 스위칭 거동(bistable switching behavior)이 관찰되었다. 이 스위칭 거동은 약 240 K의 온도에 이르면서 점차 소멸되어 상온에서는 정류기와 유사한 비대칭적 전압-전류 특성을 보였다. 이 연구에서 우리는 MgO/CuPc 층상구조에대해 유기물 스핀소자의 절연격벽뿐만 아니라 Polymer Random Access Memory(PoRAM)를 위한 응용 가능성에 대해 논하였다.

• 폴리머
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• 제33권6호
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• pp.569-574
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• 2009

수분산 PUD 필름의 내스크래치 특성을 개선하기 위해서 카보네이트(PCD), 에스터(PCL), 실옥산(PDSBP)형의 폴리올을 혼성하여 유-무기 하이브리드 수분산 폴리우레탄(PUD)을 합성하였다. 선형구조(Linear type)의 PUD보다 그래프트형(graft type)의 PUD가 유화입경이 커지는 경향이며, 이는 소수성의 실옥산 그래프트 구조에 기인된다고 생각된다. 합성 PUD의 열적성질은 linear type의 PUD는 PCD의 함량이 증가할수록 유리전이온도($T_g$)는 증가하였으며, 열분해온도는 감소하였다. 반면에, graft type PUD는 PDSBP의 양이 증가할수록 $T_g$는 감소하였고, 열분해온도는 거의 유사하였다. Graft type PUD는 PDSBP의 함량이 증가할수록 내스크래치 특성 및 hardness는 향상되는 경향을 보였다. 9 wt%의 PDSBP 폴리올이 혼성된 경우, 3.3 N의 내스크래치 특성과 9 H 이상의 연필경도를 가지는 우수한 PUD 필름을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.