• Plant Journal
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• v.16 no.3
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• pp.47-52
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• 2020

This study investigated the methodologies to enhance the corrosion resistance and the ways to measure for subsea equipment made of aluminum. The methodologies for the anticorrosion were cathodic protection, conversion coating, anodizing and organic coating. The simply analyzed ways to measure the corrosion resistance were Scanning Electron Microscope (SEM), Electrochemical Impedance Spectroscopy (EIS), Glow discharge optical emission spectrum spectroscopy (GD-OES), Fourier Transform Infrared Spectroscopy (FT-IR), Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS), Scanning Vibrating Electrode Technique (SVET), contact angle and interfacial tension. The most widely used tools for increasing the corrosion resistance were the anodizing and the organic coating. Many ways were evenly used to measure corrosion. The methods more frequently utilized were SEM for the surface investigation and the contact angle to evaluate the corrosion resistance.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.40 no.3
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• pp.259-268
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• 2014

Non-invasive technologies in skin research have enabled to use a live image of living skin without a biopsy or histologic processing of tissue. Confocal scanning laser microscope (CSLM) operated at a near-infrared wavelength of 830 nm allows visualization of inner structure of skin as a non-invasive manner. According to previous researches using CSLM, melanin cap and papillary ring were clearly observed in pigmented areas between stratum basale and papillary dermis. In this study, conversional analysis of CSLM digital images into numerical estimation using scanning probe image processor (SPIP) software was attempted for the first time. It is concluded that a quantification of CSLM images can pave way to expand the field of applications of CSLM.

• The Journal of Advanced Prosthodontics
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• v.2 no.4
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• pp.117-121
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• 2010

PURPOSE. The present study was intended to evaluate the effect of soldering techniques with infrared ray and gas torch under different gap distances (0.3 mm and 0.5 mm) on the tensile strength and surface porosity formation in Ni-Cr base metal alloy. MATERIALS AND METHODS. Thirty five dumbbell shaped Ni-Cr alloy specimens were prepared and assigned to 5 groups according to the soldering method and the gap distance. For the soldering methods, gas torch (G group) and infrared ray (IR group) were compared and each group was subdivided by corresponding gap distance (0.3 mm: G3 and IR3, 0.5 mm: G5, IR5). Specimens of the experimental groups were sectioned in the middle with a diamond disk and embedded in solder blocks according to the predetermined distance. As a control group, 7 specimens were prepared without sectioning or soldering. After the soldering procedure, a tensile strength test was performed using universal testing machine at a crosshead speed 1 mm/min. The proportions of porosity on the fractured surface were calculated on the images acquired through the scanning electronic microscope. RESULTS. Every specimen of G3, G5, IR3 and IR5 was fractured on the solder joint area. However, there was no significant difference between the test groups (P > .05). There was a negative correlation between porosity formation and tensile strength in all the specimens in the test groups (P < .05). CONCLUSION. There was no significant difference in ultimate tensile strength of joints and porosity formations between the gas-oxygen torch soldering and infrared ray soldering technique or between the gap distance of 0.3 mm and 0.5 mm.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.31-36
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• 2017

In this paper, designed infrared (IR) emitter device for infrared scene projector (IRSP) which is used for evaluating the performance of IR sensor systems was simulated by using finite element analysis (FEA) tool and fabricated by using MEMS (Micro Electro-Mechanical System) technology. The performance of the fabricated IR emitter unit device was characterized in the vacuum chamber by using IR image microscope for MWIR($3{\sim}5{\mu}m$), which showed 423K apparent temperature (Tapp) and 22msec time constant (${\tau}$).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.171.2-171.2
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• 2015

Nowadays, trivalent rare-earth ($RE^{3+}$) ions activated metal oxides have been proved to be excellent host materials due to their various applications. Facile wet-chemical technique have been considered as the best synthetic route due its intensive interest in the preparation of nanostructures. Europium ion doped lanthanum hydroxide ($La(OH)_3:Eu^{3+}$) phosphors were synthesized by the facile wet chemical method using the hexamethylenetetramine (HMTA) as a mediated surfactant. The thermal behavior for the $La(OH)_3:Eu^{3+}$ phosphors was investigated by thermogravimetric and differential thermal analysis method. The morphological studies were measured by scanning electron microscope and transmission electron microscope measurements, indicating three-dimensional (3D) flower-like $La(OH)_3:Eu^{3+}$ nanorod bundles. After subsequent annealing process, the lanthanum oxide ($La_2O_3:Eu^{3+}$) phosphor exhibited similar kind of morphology. The synthesized $La(OH)_3:Eu^{3+}$ and $La_2O_3:Eu^{3+}$ samples were characterized by X-ray powder diffraction and Fourier transform infrared spectroscopy. Furthermore, photoluminescence and cathodoluminescence properties were studied in details.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.207-207
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• 2013

기존의 그래핀 성장에 관한 연구는 열화학기상증착법(Chemical vapor deposition; CVD)을 이용한다. 그래핀 성장 제어 요소로는 촉매 기판인 전이 금속[Ru, Ir, Co, Re, Pt, Pd, Ni, Cu], 기판 전처리 과정, 수소/메탄 가스 혼합비, 작업 진공 상태, 기판온도[$800{\sim}1,000^{\circ}C$, 냉각 속도 등으로 보고 되고 있다. 그래핀 성장 원리는 Cu 촉매 기판에 메탄 가스를 $1,000^{\circ}C$ 온도에서 분해해서 탄소를 고용 시킨 후 급랭하는 도중에 석출되는 탄소에 의해 그래핀 시트가 형성되는 것으로 알려져 있다. 기존의 CVD를 열원을 이용할 경우 내부 챔버에 생기는 잠열에 의해 cooling profile의 제어가 용이하지 않다. 본 연구에서는 근적외선(Near Infrared; NIR) 열원을 이용한 CVD로 챔버 내부 잠열을 최소화하고, 냉각 공정을 Natural, Linear, Convex cooling type으로 디자인해서 cooling profile 제어가 그래핀 성장에 미치는 영향을 연구 하였다. 이렇게 성장된 그래핀을 임의의 기판(SiO2, Glass, PET film) 위에 습식방법으로 전이 시킨 후, 전기적 구조적 및 광학적 특성을 면저항(four-point probe), 전계방사 주사전자현미경(Field Emission Scanning Electron Microscope; FE-SEM), 마이크로 라만 분광법(Micro Raman spectroscopy) 및 광학현미경(optical microscope), 투과도(UV/Vis spectrometer)의 측정으로 잠열이 최소화된 NIR-CVD에서 cooling profile에 따른 그래핀 성장을 평가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Journal of the Korean Society of Costume
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• v.58 no.9
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• pp.129-141
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• 2008

Jikgeum(woven with supplementary golden wefts) hyungbae(rank badge) of danryung(official uniform) excavated from Im Backryung'tomb($1498{\sim}1546$) of the Joseon dynasty($1392{\sim}1910$) at Goyang, Gyunggi-Do in 2007, was in a critical condition because of serious collapse of substrate in metal thread. For conservation of hyungbae, metal thread was examined by different scientific methods(Light Microscope, Scanning Electron Microscope and Energy Dispersive X-Rray Spectrometry(SEM-EDS), Fourier Transform Infrared Spectroscopy(FT-IR)). Analytical data showed that metal thread was gilt membrane strip composed of gold leaves and proteinaceous substrate which was probably parchment. To protect collapse of substrate, 1% solution of Paraloid B-72 was infilterated into substrate for consolidation of substrate and it was adhered to warp of fabric in hyungbae, before wet cleaning. After wet cleaning, the most of the gold leaves were restored, which was confirmed by both the examination with the naked eye and the microscopic examination.