• 제목/요약/키워드: Inert gases

검색결과 82건 처리시간 0.038초

When Methane is decomposed on the CRT Manufacturing Process

  • Lee, Byoung-Joo;Hong, Sang-Pyo;Ko, Byoung-Doo;Hwang, Cheol-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.1051-1052
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    • 2002
  • Vacuum surroundings in Cathode Ray Tubes (CRT) are very important factor for CRT lifetime, especially cathode & getter's. A getter is a very good vacuum pump; unfortunately, it cannot absorb an inert gas and hydrocarbons. There are only argon and helium in CRT after $1^{st}$ emission test because other active gases are absorbed by getter and methane is decomposed during CRT working. It is also very important to know exactly where and when methane is decomposed during the CRT manufacturing process, because methane is known to be harmful to cathode when its amount is high, and getter can't absorb the methane.

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3D 프린팅 공정 관점의 저온분사 기술 (Cold spray technology as a potential additive manufacturing)

  • 김형준;윤상훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.90-90
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    • 2017
  • Cold spray (Cold gas dynamic spray, kinetic spray) is the latest spray coating process that is known as solid state deposition process. In cold spray, inert gases (typically nitrogen and helium) accelerate powder particles prior to impact onto the substrate. Accelerating particles start to deposit onto the substrate after reaching certain critical velocities depending on the coating materials and substrate. Since process gas temperatures are kept below to melting temperature of the coating materials, it is possible to spray temperature sensitive materials such as copper and titanium, nanocrystal materials, and amorphous metals without affecting the phase change and oxide formation. It is also possible to deposit thick coatings because cold spray coatings present compressive residual stresses. This ability to deposit thick coatings is suitable to repair or rebuild parts as an additive manufacturing process. In this presentation, cold spray is introduced and compared to other additive manufacturing processes such as laser and electron beam based processes. It is also presented some applications especially in the view point of additive manufacturing process.

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급속 열처리 장치를 이용한 실리콘 산화막의 Annealing 효과 (Effects of Annealing on Silicon Dioxide using Rapid Thermal Process System)

  • 박현우;장현룡;황호정
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.383-386
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    • 1988
  • In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

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탄소나노튜브 전극으로부터 전계방출을 이용한 가스센서의 응용 (Application to Gas Sensors by Electron Emission from Carbon Nanotube Emitters)

  • 김성진
    • 한국전기전자재료학회논문지
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    • 제19권5호
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    • pp.405-410
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    • 2006
  • We fabricated gas sensors using carbon nanotubes (CNTs) as electron emitters for the purpose of detecting inert gases. By using the silicon-glass anodic bonding and glass patterning technologies with the typical Si process, we improved the compactness of the sensors and the reliability in process. The proposed sensor, based on, an electrical discharge theory known as Paschen's law in principle, works by figuring the variation of the discharge current depending on gas concentration. In the experiment, the initial breakdown characteristics were measured for air and Ar as a function of gas pressure. As the result, even though it should be realized that there are many other factors which have an effect on the breakdown of a gap, the sensors led to similar result as predicted by Paschen's law, and they showed a possibility as gas sensors which enable to detect the gas density ranged to the vacuum pressure from 1 to $10^{-3}$ Torr.

입자 핵연료의 SiC/C 다층 도포층의 미세조직 및 극미세 경도 평가 (Microstructure and Nano-hardness of SiC/C Multi-coated Layers on a Particulate Nuclear Fuel)

  • 최용
    • 한국표면공학회지
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    • 제52권6호
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    • pp.321-325
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    • 2019
  • Triso-type coating layers of silicon carbide and graphite on UO2 paticulate nuclear fuel were prepared by using fluidized bed type chemical vapor deposition and self-propagating high temperature synthesis methods to make a coated nuclear fuel of a power plant for hydrogen mass-production. The source and carrier gases were the mixture of methyltrichlorosilane and propane, and inert argon. Chemical analysis and microstructure observation showed that the coated layers were inner graphite, middle silicon carbide and outer graphite. The elastic modulus and nano-hardness of the silicon carbide layer were 503 [GPa] and 36 [GPa], respectively.

The Influence of Atmostphere on High Temperature Crystal Growth

  • Klimm, D.;Schroder, W.
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.51-67
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    • 1999
  • The growth of crystals with high melting points tfus$\geq$1$600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with tfus》1$600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, any oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure pO2. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and ways to forecast their behavior under growth conditions.r growth conditions.

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불활성 가스의 O2와 CO 불순물 제거를 위한 Ni 촉매의 물성 평가 (Assessment of Ni Catalyst Properties for Removal of O2 and CO Impurity in Inert Gas)

  • 김광배;진새라;김은석;임예솔;이현준;김성훈;노윤영;송오성
    • 한국산학기술학회논문지
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    • 제21권4호
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    • pp.588-595
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    • 2020
  • 반도체 산업용 9N 이상의 초고순도 N2, Ar 등 불활성 가스 제조를 위해 가스 정제공정에 사용되고 있는 Ni 촉매의 물성 평가 및 촉매적 특성을 확인하였다. 조성이 다른 원기둥 형태의 C1, 츄러스 형태의 C2의 두 가지 Ni 촉매에 대해 비교 평가를 진행하였다. Ni 촉매의 형상과 미세구조를 분석하기 위해 광학현미경과 FE-SEM을 이용하였으며, 조성 확인 및 물성을 분석하기 위해 EDS, XRD, 그리고 micro-Raman 분석을 이용하였다. 또한 Ni 촉매의 비표면적 및 촉매적 특성을 확인하기 위해 BET, Pulse Titration 분석을 진행하였다. 조성 분석결과, C1의 경우, 상대적으로 graphite가 불순물로 다량 포함되어 있는 것을 확인하였으며, C2는 C1에 비해 Ni의 함량이 높은 것을 확인하였다. 비표면적 분석 결과, C2의 비표면적이 C1보다 약 1.69배 정도 큰 것을 확인할 수 있었다. 촉매적 특성분석 결과, 상온에서 O2와 CO 불순물 제거 정도가 C2가 우수함을 확인하였다. 따라서 반도체 산업용 초고순도 불활성 기체 제조를 위한 Ni 촉매로는 불순물이 적고, 비표면적이 크며, 상온에서 O2와 CO 제거 성능이 우수한 C2가 적합함을 확인하였다.

추적자 확산 실험에 의한 서울 도심 확산 현상 연구 - 추적기체의 확산특징과 CALPUFF 모델에 의한 모사 (Tracer Experiment for the Investigation of Urban Scale Dispersion of Air Pollutants - Simulation by CALPUFF Dispersion Model and Diffusion Feature of Tracer Gases)

  • 이종범;김재철;이강웅;노철언;김혜경
    • 한국대기환경학회지
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    • 제23권4호
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    • pp.405-419
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    • 2007
  • A series of tracer experiments for the evaluation of atmospheric dispersion was performed over the urban area of Seoul using two inert, non-deposition perfluorocarbon (PMCH and m-PDCH) gases during three years campaign on 2002, 2003 and 2005. 30 sampling sites for collecting these tracers were located along two arcs of 2.5 and 5 kilometers downwind from the release point. About ten measurements which each lasted for 2 hours or 4 hours were made over the two consecutive days during each campaign. CALPUFF and MM5 meteorological model were applied to evaluate the urban dispersion in detail. Size of Modeling domain was $27\;km{\times}23\;km$ and the fine nest in the modeling domain had a grid size of 0.5 km. The results showed that CALPUFF dispersion model had a tendency to estimate tracer concentrations about $2{\sim}5$ times less than those of ambient samples under many conditions. These consistent inaccuracy in urban dispersion was attributed to inherent inaccuracy and lack of details in terrain data at urban area.

겔침전과 화학증착법에 의한 구형 UO2 입자와 TRISO 피복입자 제조 (Spherical UO2 Kernel and TRISO Coated Particle Fabrication by GSP Method and CVD Technique)

  • 정경채;김연구;오승철;조문성
    • 한국세라믹학회지
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    • 제47권6호
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    • pp.590-597
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    • 2010
  • HTGR using a TRISO coated particles as nuclear raw fuel material can be used to produce clean hydrogen gas and process heat for a next-generation energy source. For these purposes, a TRISO coated particle was prepared with 3 pyro-carbon (buffer, IPyC, and OPyC) layers and 1 silicone carbide (SiC) layer using a CVD technique on a spherical $UO_2$ kernel surface as a fissile material. In this study, a spherical $UO_2$ particle was prepared using a modified sol-gel method with a vibrating nozzle system, and TRISO coating fabrication was carried out using a fluidized bed reactor with coating gases, such as acetylene, propylene, and methyltrichlorosilane (MTS). As the results of this study, a spherical $UO_2$ kernel with a sphericity of 1+0.06 was obtained, and the main process parameters in the $UO_2$ kernel preparation were the well-formed nature of the spherical ADU liquid droplets and the suitable temperature control in the thermal treatment of intermediate compounds in the ADU, $UO_3$, and $UO_2$ conversions. Also, the important parameters for the TRISO coating procedure were the coating temperature and feed rate of the feeding gas in the PyC layer coating, the coating temperature, and the volume fraction of the reactant and inert gases in the SiC deposition.

극저온 $CO_2$ 세정공정의 세정인자 최적화 (Optimization of Cleaning Parameters in Cryogenic $CO_2$ Cleaning Process)

  • 이성훈;석종원;김필기;오승희;석종혁;오병준
    • 한국정밀공학회지
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    • 제25권9호
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    • pp.109-115
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    • 2008
  • The cleaning process of contaminant particles adhering to the microchips, integrated circuits (ICs) or the like is essential in modern microelectronics industry. In the cleaning process particularly working with the application of inert gases, the removal of contaminant particles of submicron scale is very difficult because the particles are prone to reside inside the boundary layer of the working fluid, The use of cryogenic $CO_2$ cleaning method is increasing rapidly as an alternative to solve this problem. In contrast to the merits of high efficiency of this process in the removal of minute particles compared to the others, even fundamental parametric studies for the optimal process design in this cleaning process are hardly done up to date, In this study, we attempted to measure the cleaning efficiency with the variations of some principal parameters such as mass flow rate, injection distance and angle, and tried to draw out optimal cleaning conditions by measuring and evaluating an effective cleaning width called $d_{50}$.