• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05b
• /
• pp.41-45
• /
• 2005

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma(ICP). In results at several dependences of 20~100 mTorr Xenon pressure, 50~200W RF power and horizontal distribution were especially mentioned. When Xe pressure was 20mTorr and RF power was 200W, the electron temperature and density were respectively 3.58eV and $3.56{\times}10^{12}cm^{-3}$. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.768-771
• /
• 2007

Carbon nanotubes (CNTs) were synthesized by inductively coupled plasma CVD at $450^{\circ}C$. CNTs were grown on the 1-nm-thick Fe-Ni-Co with $C_2H_2$ and $H_2$ at different pressures and plasma powers. CNTs were grown longer in height as the $H_{\alpha}/CH$ ratios became lower by decreasing plasma powers and increasing growth pressures.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.2
• /
• pp.83-89
• /
• 2011

In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.12a
• /
• pp.43-47
• /
• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• The Korean Journal of Food And Nutrition
• /
• v.12 no.4
• /
• pp.344-349
• /
• 1999

The mineral contents were analyzed for apple juices by Inductively Coupled Plasma. The Mg contents of tested commercial apple juices ranged 6.27∼32.91ppm, Ca 15,95∼3.11.76ppm K231∼1148.02ppm Na 39.82∼115.68ppm and P 19.27∼304.02ppm. The mineal contents of model apple juice were Mg 29.83∼45.65ppm Ca 16.98∼30.98ppm K 814.28∼1,256.70ppm Na 19.88∼26.85ppm and P 25.88∼54.71ppm. respectively. Comparing mineral contents of model apple juices and commercial apple juice, Na, Ca and P contents of commercial apple juices were higher but Mg, K contents were lower than that of model apple juices. Among the mineral content of apple juices. K was the major element.

• Journal of the Korean institute of surface engineering
• /
• v.45 no.4
• /
• pp.174-180
• /
• 2012

Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.09a
• /
• pp.197-202
• /
• 2005

Due to high permeability of the ferrite core, the characteristics of the ICP are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in ike ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysterisis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency (${\~}$100kHz) will be greatly improved since the losses at the low frequency can be negligible.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.2
• /
• pp.159-163
• /
• 2001

Si3N4 powder has been analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The sample was dissolved by high-pressure acid digestion with HF, H2SO4 (1+1), and HNO3 mix ture. This technique is well suited for the impurity analysis of Si3N4 because the matrix interference is eliminated. A round-robin samples trace elements, such as Ca, W, Co, Al, Fe, Mg, and Na, were determined. For the direct analysis, slurry nebulization of 0.96 mm Si3N4 powder also has been studied by ICP-AES. Emission intensities of Fe were measured as ICP operational conditions were changed. Significant signal difference between slurry particles and aqueous solution was observed in the present experiment. Analytical results of slurry injection and high-pressure acid digestion were compared. For the use of aqueous standard solution for calibration, k-factor was determined to be 1.71 for further application.

• Journal of the Korean Physical Society
• /
• v.73 no.9
• /
• pp.1399-1404
• /
• 2018

This study used an inductively coupled plasma (ICP) dry etching process with a metal amplitude mask to fabricate a double-side notched long-period fiber grating (DNLPFG) for loading sensing. The DNLPFG exhibited increasing resonance attenuation loss for a particular wavelength when subjected to loading. When the DNLPFG was subjected to force loading, the transmission spectra were changed, showing a with wavelength shift and resonance attenuation loss. The experimental results showed that the resonant dip of the DNLPFG increased with increasing loading. The maximum resonant dip of the $40-{\mu}m$ DNLPFG sensor was -26.522 dB under 0.049-N loading, and the largest force sensitivity was -436.664 dB/N. The results demonstrate that the proposed DNLPFG has potential for force sensing applications.

• Journal of the Korean institute of surface engineering
• /
• v.55 no.2
• /
• pp.77-83
• /
• 2022

Nanocrystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) changing the plasma power from 0 W to 200 W. The properties of the coatings were analyzed by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, nanoindentation tester and semiconductor characterization system. As the ICP power increases, the crystal structure of the MoN coatings changed from a mixed phase of γ-Mo₂N and α-Mo to a single phase γ-Mo₂N. MoN coatings deposited by ICPMS at 200 W showed the most compact microstructure with the highest nanoindentation hardness of 27.1 GPa. The electrical resistivity of the coatings decreased from 691.6 μΩ cm to 325.9 μΩ cm as the ICP power increased.