• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.161-166
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• Laser Solutions
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• v.17 no.1
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• pp.13-16
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• 2014

Indium Tin Oxide (ITO) has been used widely for transparent conducting thin films. In this work, the feasibility of a laser sintering process to fabricate ITO thin films on flexible substrates is examined. Nanoparticles of ~10 nm were spin coated on a Si wafer and then sintered by a KrF excimer laser. The sintered structure was characterized by scanning electron microscopy. Polycrystalline structures were fabricated by the process without thermally damaging the substrate. The electrical resistivity of the film was reduced to ~ 1/1000 of the initial value. This work demonstrates that nanosecond laser sintering of ITO particles can be a useful tool to fabricate ITO films on various flexible substrates.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.4
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• pp.325-329
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• 2016

In this study, we investigated the feasibility of using printed Indium Tin Oxide (ITO) film as a remote sensor for Hazardous and Noxious Substances (HNS). To improve the quality of the ITO films, binder mixing ratio, Sn concentration in ITO, thermal treatment temperature, and printing process conditions were optimized. We fabricated an electrical resistance-type liquid sensor, and to confirm the sensor operation, the change in resistance in air and seawater was monitored. The change in resistance of the ITO sensor was explained in terms of reduction reaction on the surface. Further, the sensor was controlled by Arduino, and the remote data acquisition was demonstrated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.449-452
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• 2005

We fabricated an electrochemical detector (ECD) to catalyze redox reaction efficiently by electrodepositing Prussian blue (PB) on the indium tin oxide (ITO) electrode. Capillary electrophoresis (CE) and amperometric method were used. We investigated the PB surface properties by topography from atomic force microscopy (AFM). Also PB film thickness calibration with respect to deposition time and voltage was used to get better PB surFace. The PB thin film of dense and smooth surface could catalyze redox reaction efficiently. Comparing with CE-ECD microchip using bare-lTO electrode, proposed CE-ECD microchip using PB deposited electrode has shown better sensitivity by determining the detected peak current from the electropherograms while the concentration of tested analyzes was maintained the same. It is verified that detection limit can be lowered for 0.01 mM of dopamine and catechol respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.2-47.2
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• 2011

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1115-1120
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• 2003

In this paper, we investigated the position dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge, In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.54-61
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• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.935-938
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• 2010

Indium-tin-oxide (ITO) films show a low electrical resistance and high transmittance in the visible range of an optical spectrum. The transparent electrodes have to get resistivity and sheet resistance less than $1{\times}10^{-3}{\Omega}/cm$ and $10^3{\Omega}/sq$ respectively and transmittance over 80% at wavelength of 380nm~780nm. This study establishes DC magnetron sputtering process condition on ITO thin film by measuring electrical and optical properties of the thin film. As results, we obtained $300\;{\mu}{\Omega}cm$ resistivity of ITO films with good transmittance (above 90 %) under 90:10 wt% composition rate of $In_2O_3:SnO_2$. Also, we understood that the ITO thin film by DC magnetron sputtering depends on the deposition condition, especially substrate temperature, and the composition rate of $In_2O_3:SnO_2$ that is one of the most critical parameters was successfully optimized for high qualified transparent electrodes.