• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.208-208
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• 2010

Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권5호
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• pp.227-231
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• 2005

We have developed a microsystem with a capillary electrophoresis (CE) and an electrochemical detector (ECD). The microfabricated CE-ECD systems are adequate for a disposable type and the characteristics are optimized for an application to the electrochemical detection. The system was realized with polydimethylsiloxane (PDMS)-glass chip and indium tin oxide electrode. The injection and separation channels (80 um wide$\ast$40 um deep) were produced by moulding a PDMS against a microfabricated master with relatively simple and inexpensive methods. A CE-ECD systems were fabricated on the same substrate with the same fabrication procedure. The surface of PDMS layer and ITO-coated glass layer was treated with UV-Ozone to improve bonding strength and to enhance the effect of electroosmotic flow. For comparing the performance of the ITO electrodes with the gold electrodes, gold electrode microchip was fabricated with the same dimension. The running buffer was prepared by 10 mM 2-(N-morpholino)ethanesulfonic acid (MES) titrated to PH 6.5 using 0.1 N NaOH. We measured olectropherograms for the testing analytes consisted of catechol and dopamine with the different concentrations of 1 mM and 0.1 mM, respectively. The measured current peaks of dopamine and catechol are proportional to their concentrations. For comparing the performance of the ITO electrodes with the gold electrodes, electropherograms was measured for CE-ECD device with gold electrodes under the same conditions. Except for the base current level, the performances including sensitivity, stability, and resolution of CE-ECD microchip with ITO electrode are almost the same compared with gold electrode CE-ECD device. The disposable CE/ECD system showed similar results with the previously reported expensive system in the limit of detection and peak skew. When we are using disposable microchips, it is possible to avoid polishing electrode and reconditioning.

• 센서학회지
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• 제6권4호
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• pp.252-257
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• 1997

ITO(indium-tin-oxide)/PPV(poly(p-phenylenevihylene))/음극 전극의 단층구조와 ITO /PVK(poly(N-vinylcarbazole))/PPV/음극전극의 이층구조를 가진 유기 EL(electroluminescence) 소자를 제작하였으며, 전기-광학적 특성을 측정하였다. 실험 결과, 단층구조에서는 PPV막의 열변환 온도를 $140^{\circ}C$에서 $260^{\circ}C$로 증가할수록 최대 휘도가 $118.8\;cd/m^{2}$(20V)에서 $21.14\;cd/m^{2}$(28V)으로 감소하였고, EL 스펙트럼의 최대 피크가 500nm에서 580nm로 이동하였다. 또한, 음극전극의 일함수가 낮을수록 소자의 발광휘도와 주입 전류는 증가되었다. 이층구조에서는 PVK막의 농도가 감소함에 따라 발광휘도가 $70.71\;cd/m^{2}$(32V)에서 $152.7\;cd/m^{2}$(26V)으로 증가하였다.

• 자원리싸이클링
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• 제27권2호
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• pp.24-31
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• 2018

본 연구에서는 폐 ITO 타겟을 염산에 용해시킴으로써 인듐-주석 복합 산 용액을 제조하여 원료용액으로 사용하였다. 이 원료용액으로부터 분무열분해 공정에 의하여 평균입도 30 nm 이하의 ITO 분체를 제조하였다. 또한 본 연구에서는 인듐-주석 산화물(ITO) 형성을 위한 열역학적 수식들을 확립하였다. 반응온도가 $800^{\circ}C$로부터 $900^{\circ}C$로 증가됨에 따라 평균입도 30 nm 이하인 나노입자들이 응집되어 있는 액적 형태의 비율 및 크기는 감소하는 반면 표면 조직은 더욱 치밀해짐을 알 수 있었다. 반응온도가 $800^{\circ}C$인 경우에는 생성된 분체의 평균입도는 약 20 nm이었으며, 현저한 소결 현상은 나타나지 않았다. 한편, 반응온도가 $900^{\circ}C$인 경우에는 노즐에 의하여 미립화되는 액적의 분열 현상은 $800^{\circ}C$의 경우보다 심하게 나타났으며 액적 형태의 비율은 현저하게 감소하였다. 형성된 입자들의 평균 입도는 약 25 nm로서 $800^{\circ}C$의 경우보다 약간 증가하였다. 반응온도에 관계없이 ITO 입자들은 단결정으로 구성되어 있었다. XRD 분석 결과 분무열분해 공정에 의하여 염화물 상은 전혀 존재하지 않았으며 오직 ITO 상만이 형성되었음을 알 수 있었다. 반응온도가 $800^{\circ}C$로부터 $900^{\circ}C$로 증가함에 따라 비표면적은 약 30% 감소하였다.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.747-753
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• 2004

In this paper, nanocrystalline indium tin oxide (ITO) particles were fabricated by using synthesis without harmful elements. The synthetic method is to eliminate the chloridic and nitridic elements which are included in the current wet type synthetic method. Therefore, it is possible to lower synthetic temperature below 600 $^{\circ}C$ to eliminate the harmful elements. Accordingly, fine particle can be achieved by applying the process. Particle size, surface area, crystal structure, and composition ratio of the synthesized nanocrystalline ITO particle by using the method were analyzed with high resolution transmission electron microscopy (HRTEM), BET surface area analyzer, X-ray diffraction (XRD), and energy dispersion spectroscopy (EDS). As a result, its particle size is less than 10 nm, and the surface area exceeds 100 m$^2$/g. The XRD analysis indicates that the cystal structure of the powder is cubic one with orientation of <222>, <400>, <440>. Also, the analysis of the composition demonstrates that the around 8 wt% tin is uniformly included in In$_2$O$_3$ lattice of the nanoparticle.

• 한국표면공학회지
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• 제41권5호
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• 한국표면공학회지
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• 제41권5호
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• pp.199-204
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• 2008

Indium tin oxide (ITO) has been commonly used as an anode for organic light emitting diode (OLED), because of its relatively high work function, high transmittance, and low resistance. The ITO was mostly deposited by capacitive type DC or RF sputtering. In this study we introduced a new facing target sputtering method. On applying this new sputtering method, the effect of fundamental deposition parameters such as substrate heating and post etching were investigated in relation to the resultant I-V-L characteristics of OLED. Three kinds of ITOs deposited at room temperature, at $400^{\circ}C$ and at $400^{\circ}C$ with after surface modification by $O_2$ plasma etching were compared. The OLED on ITO deposited with substrate heating and followed by etching showed better I-V-L characteristics, which starts to emit light at 4 volts and has luminescence of $65\;cd/m^2$ at 9 volts. The better I-V-L characteristics were ascribed to the relevant surface roughness with uniform micro-extrusions and to the equi-axed micromorphology of ITO surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.849-852
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• 2004

Indium tin oxide (ITO) thin films on polymeric substrates such as acryl (AC), Poly carbornate (PC), polypropylene (PP), and polyethlene terephthalate (PET) have been deposited by a do reactive magnetron sputtering without heat treatments. Sputtering parameters is an important factor for high Qualify of ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results the surface roughness of ITO films becomes rough as the oxygen partial pressure Increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 80%.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1542-1545
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• 2009

For the application of flexible substrate to future display and new transparent devices, indium tin oxide (ITO) thin film was formed on polycarbonate(PC) substrate at room temperature by in-line sputter system. During the ITO sputtering, Ar and $O_2$ reaction gas were fixed at a constant value and the process pressure was varied from 3 to 7 mtorr. From the electrical and the optical properties of sputtered ITO films, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances of the ITO films at visible wavelength were maintained above 85%. The results are considered to be due to the saturation of $O_2$ atoms from reaction in ITO film.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.