• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.399-403
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• 2002

The complex of iron(II) tris(3-Br-phen) (3-Br-phen; 3-bromo-1,10-phenanthroline) was prepared as a precursor of electropolymerization and the crystal structure of [Fe(3-Br-phen)3]($PF_6$)2${\cdot}$CH3CN with a distorted octahedral geometry has been investigated. The reductive electropolymerization of $>[Fe(3-Br-phen)3]^{2+}$ complex onto the surface of a glassy carbon electrode and indium tin oxide (ITO) optically transparent electrode were performed in acetonitrile at room temperature. Thin film of poly-$>[Fe(3-Br-phen)3]^{2+}$ formed was adherent, electroactive and stably deposited on a glassy carbon disk electrode. The thin metallopolymeric film formed was also confirmed by absorption spectroscopy.

• Rapid Communication in Photoscience
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• v.2 no.3
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• pp.79-81
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• 2013

A novel method of fabricating polythiophene-gold nanoparticle composite film electrodes for photoelectric conversion is demonstrated. The method includes electrodeposition of gold and electropolymerization of 2,2'-bithiophene onto an indium-tin-oxide (ITO) electrode. First, electrodeposition of gold onto the ITO electrode was carried out with various repetition times of pulsed applied potential (0.25 s at -2.0 V vs. Ag/AgCl) in an aqueous solution of $HAuCl_4$. Significant progress of the number density of deposited gold nanoparticles was confirmed from scanning electron micrographs, from 4 (1 time) to 25% (15 times). Next, electropolymerization of 2,2'-bithiophene onto the above ITO electrode was performed under controlled charge condition (+1.4 V vs. Ag wire, 15 $mC/cm^2$). Structural characterization of as-fabricated films were carried out by spectroscopic and electron micrographic methods. Photocurrent responses from the sample film electrodes were investigated in the presence of electron acceptors (methyl viologen and oxygen). Photocurrent intensities increased with increasing the density of deposited gold nanoparticles up to ~10%, and tended to decrease above it. It suggests that the surplus gold nanoparticles exhibit quenching effects rather than enhancement effects based on localized electric fields induced by surface plasmon resonance of the deposited gold nanoparticles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.10-10
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• 2009

We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.1
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• pp.8-17
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• 2023

In conventional liquid crystal display(LCD) manufacturing process, Indium Tin Oxide(ITO) as transparent electrode and rubbing process of polyimide as alignment layer are essential process to apply electric field and align liquid crystal molecules. However, there are some limits that deposition of ITO requires high vacuum state, and rubbing process might damage the device with tribolectric discharge. In this paper, we made nanocomposite with PEDOT:PSS and MWNT to replace ITO and constructed alignment layer by nano imprint lithography with nano wrinkle pattern, to replace rubbing process. These replacement made that only one PEDOT:PSS/MWNT film can function as two layers of ITO and polyimide alignment layer, which means simplification of process. Transferred nano wrinkle patterns functioned well as alignment layer, and we found out lowered threshold voltage and shortened response time as MWNT content increase, which is related to increment of electric conductivity of the film. Through this study, it may able to contribute to process simplification, reducing process cost, and suggesting a solution to disadvantage of rubbing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.1-490.1
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• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1386-1387
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• 2006

PDMS와 ITO 유리를 이용하여 continuous-flow PCR chip을 제작하였다. PDMS를 이용하여 microchannel을 형성하여 주었고, ITO electrode를 heater와 sensor로 사용하기 위하여 반도체 공정을 통해 패턴을 형성하였다. microchannel내에 흐르는 시료의 온도를 제어하기 위하여 heater와 sensor를 calibration을 하였다. ITO heater는 인가된 전압에 대해 매우 선형적인 발열을 하였으며, ITO sensor는 온도에 대해 선형적인 저항 변화를 나타낸 바, 그 결과 continuous-flow PCR chip의 정확한 온도 제어가 가능하였다.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.225-230
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• 2011

CIGS solar cells are kind of thin film solar cells, which are studied several years. CdS buffer layer that makes heterojunction between window layer and absorbing layer was one of issue in the CIGS solar cell study. New types of buffer layer consisted of indium sulfide are being studied these days owing to high price and environmental harmful of CdS. In this study, we demonstrated electrochemical synthesis of indium sulfide film as a buffer layer, which is cheaper and faster than other methods. A uniform indium sulfide film was obtained by applying two different alternating potentials. The band gap of the film was optimized by controlling temperature during the electrochemical synthesis. Using x-ray photoelectron spectroscopy and diffraction method we confirmed that ${\beta}$-indium sulfide was formed on ITO electrode surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.239.2-239.2
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• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.244-244
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• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.