• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.2013-2014
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• 2011

Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1560-1563
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• 2005

In this study, we introduce indium tin oxide (ITO) thin films grown by using a low-frequency magnetron sputtering method (LFMSM). Characteristics of the ITO thin films deposited on polyethersulfone (PES) and polyethylene terephthalate (PET) substrates are investigated. Experiments were carried out as a function of deposition time. ITO thin films on polymer substrates revealed amorphous structure. The optical, the electrical and structural properties of the films on PES substrate are better than those on PET substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$(90mol%) and $SnO_{2}$(10mol%). We prepared ITO thin films with substrate temperature 200 to $400^{\circ}C$ and annealing temperature 200 to $500^{\circ}C$. Good polycrystalline-structured ITO films with a low electrical resistivity of $3.4{\times}10^{-4}\Omega{\cdot}cm$ have been obtained. The visible light transmittance of all obtained films was over 80 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture In$_2$O$_3$(90mo1%) and SnO$_2$(10mo1%). We prepared ITO thin films with substrate temperature 200 to 400$^{\circ}C$ and annealing temperature 200 to 500$^{\circ}C$ food polycrystalline-structured ITO films with a low electrical resistivity of 3.4${\times}$10$\^$-4/ Ω$.$cm have been obtained. The visible light transmittance of all obtained films was over 80 %.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.700-705
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• 1997

Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.846-851
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• 2004

Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.152-157
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• 2000

Post-deposition vacuum annealing effects in electron-bearn-evaporated indium tin oxide (ITO) films have been investigated by the change of transmittance, sheet resistance and crystalline structure with annealing temperature ( $200-335^{\circ}C$) and oxygen partial pressure ($1\times^10^{-5}-1$\times10^{-4} torr$) in air and vacuum. The sarnples were polycrystalline films with a preferred orientation in the (222) plan. High quality films with sheet resistance as low as 62 Q/O and transmittance over 99% (absentee layer at 500 nm) have been obtained by suitably controlling the vacuum annealing pararneters.neters.