• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.397-397
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Current Applied Physics
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• 제18권11호
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• Toxicological Research
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• 제30권1호
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• pp.55-63
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• 2014

Objectives: The use of indium compounds, especially those of small size, for the production of semiconductors, liquid-crystal panels, etc., has increased recently. However, the role of particle size or the chemical composition of indium compounds in their toxicity and distribution in the body has not been sufficiently investigated. Therefore, the aim of this study was to examine the effects of particle size and the chemical composition of indium compounds on their toxicity and distribution. Methods: Male Sprague-Dawley rats were exposed to two different-sized indium oxides (average particle sizes under 4,000 nm [IO_4000] and 100 nm [IO_100]) and one nano-sized indium-tin oxide (ITO; average particle size less than 50 nm) by inhalation for 6 hr daily, 5 days per week, for 4 weeks at approximately $1mg/m^3$ of indium by mass concentration. Results: We observed differences in lung weights and histopathological findings, differential cell counts, and cell damage indicators in the bronchoalveolar lavage fluid between the normal control group and IO- or ITO-exposed groups. However, only ITO affected respiratory functions in exposed rats. Overall, the toxicity of ITO was much higher than that of IOs; the toxicity of IO_4000 was higher than that of IO_100. A 4-week recovery period was not sufficient to alleviate the toxic effects of IO and ITO exposure. Inhaled indium was mainly deposited in the lungs. ITO in the lungs was removed more slowly than IOs; IO_4000 was removed faster than IO_100. IOs were not distributed to other organs (i.e., the brain, liver, and spleen), whereas ITO was. Concentrations of indium in the blood and organ tissues were higher at 4 weeks after exposure. Conclusions: The effect of particle size on the toxicity of indium compounds was not clear, whereas chemical composition clearly affected toxicity; ITO showed much higher toxicity than that of IO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
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• pp.48-48
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• 1998

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.69-69
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• 1999

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.308-308
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• 2008

• EDISON SW 활용 경진대회 논문집
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• 제6회(2017년)
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• pp.428-432
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• 2017

Silicon 기반 Metal-oxide-semiconductor field-effect transistor (MOSFET)의 크기가 감소함에 따라 silicon자체의 물성적 한계가 나타나고 있다. 이를 극복하고자 III-V 화합물 반도체가 채널소자로서 각광받고 있다. 본 연구에서는 III-V 화합물반도체 중 $In_xGa_{1-x}As$는 Indium 조성에 따른 전자구조 및 n-type MOSFET의 소자 특성을 본다. Indium의 조성이 증가함에 따라 subband의 개수와 간격이 증가하게 되어 Density of state가 감소하게 된다. 이로 인하여 Indium의 조성이 증가함에 따라 $In_xGa_{1-x}As$ 채널 MOSFET에서 상대적으로 Fermi level을 더 많이 상승시키게 되어 potential barrier를 얇아지게 만들며 또한 에너지에 따른 전류 밀도를 넓게 분포하도록 만든다. 이로 인하여 단채널에서는 In 조성이 증가함에 따라 direct source-to-drain tunnelling current이 증가하게 된다. 이로 인하여 In 조성의 증가에 따라 subthreshold swing과 ON-state current가 저하된다.

• Current Photovoltaic Research
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• 제2권1호
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• pp.14-17
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• 2014

In this paper, indium reduced materials for transparent conductive electrodes (TCE) were fabricated and their physical properties were evaluated. Two of materials, indium-zinc-tin oxide (IZTO) and aluminum (Al) were selected as TCE materials. In case of IZTO nanoparticles, composition ratios of In, Zn and Sn is 8:1:1 were synthesized. Size of the synthesized IZTO nanoparticles were less than 10 nm, and specific surface areas were about $90m^2/g$ indicating particle sizes are very fine. Also, the IZTO nanoparticles were well crystallized with (222) preferred orientation despite it was synthesized at the lowered temperature of $300^{\circ}C$. Composition ratios of In, Zn and Sn were very uniform in accordance with those as designed. Meanwhile, Al was deposited onto glass by sputtering in a vacuum chamber for mesh architecture. The Al was well deposited onto the glass, and no pore was observed from the Al surface. The sheet resistance of Al on glass was about $0.3{\Omega}/{\square}$ with small deviation of $0.025{\Omega}/{\square}$, and adhesion was good on the glass substrate since no pelt-off part of Al was observed by tape test. If the Al mesh is combined with ink coated layer which is consistent of IZTO nanoparticles, it is expected that the good and reliable metal mesh architecture for TCE will be formed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• 한국산업보건학회지
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• 제23권2호
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• pp.108-113
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• 2013

Objectives: Although several cases of lung diseases caused by indium have been reported in Japan, the United States and China, South Korea, which is estimated to have been the world's largest consumer of indium, has not yet established a criteria for the diagnosis of lung diseases caused by indium exposure. In this study, we tried to determine the applicability of the Krebs von den lungen-6, which has been widely recognized for its use with interstitial lung disease in Japan, as a biological exposure index for indium. Methods: Methods: The analysis of indium in serum was conducted by inductively coupled plasma mass spectrometry and the analysis of KL-6 in serum was carried out using enzyme-linked immunosorbent assay kit. Results: The indium levels in serum were distributed from below the detection limit to a peak of $125.78{\mu}g/L$, and the values of the KL-6 were distributed from 104.5 U/mL to 2162.2 U/mL. The serum indium and KL-6 showed good correlation ($R^2$=0.389,pfortrend=0.000) and smoking did not affect the KL-6. Conclusions: The usefulness of KL-6 as a specific biomarker for interstitial lung disease has been recognized. In addition, it is expected that effective prevention of health problems can be achieved by determining the lung-damage progress at an early stage according to individual susceptibility.