• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.8
• /
• pp.846-851
• /
• 2004

Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.12
• /
• pp.1115-1120
• /
• 2003

In this paper, we investigated the position dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge, In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.522-525
• /
• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• The Korean Journal of Ceramics
• /
• v.5 no.1
• /
• pp.40-43
• /
• 1999

In order to investigate Sn substitution sites and interstitial O atoms in tin-doped indium oxide, molecular dynamics (MD) simulations were carried out. There are two kinds of cation sites in $In_2O_3$, namely b-site and d-site. NTP-MD simulations under the condition of 300 K and 0 GPa were performed with two kinds of cells substituted by Sn atoms at each site. The excess oxygen atom accompanied with Sn doping was also taken into consideration. According to the calculations of Sn potential energies in each site, it was revealed that Sn atoms were substituted for b-sites rather than for d-sites. It was also revealed that the interstitial excess oxygen atoms tend to be connected with the Sn atoms substituted for the d-sites Sn rather than for the b-site. There MD simulation results well agreed with the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05a
• /
• pp.137-141
• /
• 2004

저항특성이 다른 ITO박막의 구조특성과 표면특성을 XRD와 AFM(atomic force microscopy), SEM(scanning electron microscopy)을 이용하여 관측하였다. 접촉방식인 4단자 법을 사용하여 ITO박막의 표면전기저항을 측정하였다. 관측된 구조 및 표면특성을 바탕으로 비파괴 비접촉방식을 이용한 근접장 마이크로파 현미경을 이용하여 얻은 ITO박막의 표면저항특성과 비교 연구하였다.

• Journal of Sensor Science and Technology
• /
• v.16 no.3
• /
• pp.229-233
• /
• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.342.2-342.2
• /
• 2014

IZO, ITO, ITO 등의 투명전극들 중 Indium Tin Oxide (ITO) 다른 전극에 비해 높은 광투과도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용되고 있다. 본 연구에서는 우수한 투과도의 멀티 layer 단열 창호를 위한 film 개발을 위해 RF magnetron system을 이용하여 Sodalime Glass와 polyethylene terephthalate (PET) substrate에 ITO를 증착함으로써 전기적 광학적 특성을 조사하였다. 실험은 power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. Power는 100 Watt 늘려가며 진행하였고 O2 유량의 변화에 따라 투과도와 면저항, 굴절률 특성이 달라짐을 확인할 수 있었다. O2의 유량에 따라 면저항이 줄어들다가 어느 정도 이상이 되면 급격히 증가함을 확인할 수 있었다. Working Pressure 변화에 따른 전기적 광학적 특성 또한 확인 하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.714-716
• /
• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.554-557
• /
• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$(90mol%) and $SnO_{2}$(10mol%). We prepared ITO thin films with substrate temperature 200 to $400^{\circ}C$ and annealing temperature 200 to $500^{\circ}C$. Good polycrystalline-structured ITO films with a low electrical resistivity of $3.4{\times}10^{-4}\Omega{\cdot}cm$ have been obtained. The visible light transmittance of all obtained films was over 80 %.

• Journal of Surface Science and Engineering
• /
• v.38 no.5
• /
• pp.179-182
• /
• 2005

Indium Tin Oxide (ITO) thin films were deposited from various target densities ($98.7\%\~99.6\%$) using RF magnetron sputtering. Effect of the sputtering target densities on the structural, electrical and optical properties of deposited ITO thin films was investigated. The preferable (400) crystalline orientation peak was observed on the films deposited from > $99.0\%$ target density. Higher target density produced films with higher roughness but lower resistivity. All of the deposited films showed optical transmittance more than $85\%$ in the visible wavelength region. It is necessary to use the highest target density for sputtering deposition of ITO thin films.