• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.171-175
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• 2002

The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.428-432
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• 2017

Silicon 기반 Metal-oxide-semiconductor field-effect transistor (MOSFET)의 크기가 감소함에 따라 silicon자체의 물성적 한계가 나타나고 있다. 이를 극복하고자 III-V 화합물 반도체가 채널소자로서 각광받고 있다. 본 연구에서는 III-V 화합물반도체 중 $In_xGa_{1-x}As$는 Indium 조성에 따른 전자구조 및 n-type MOSFET의 소자 특성을 본다. Indium의 조성이 증가함에 따라 subband의 개수와 간격이 증가하게 되어 Density of state가 감소하게 된다. 이로 인하여 Indium의 조성이 증가함에 따라 $In_xGa_{1-x}As$ 채널 MOSFET에서 상대적으로 Fermi level을 더 많이 상승시키게 되어 potential barrier를 얇아지게 만들며 또한 에너지에 따른 전류 밀도를 넓게 분포하도록 만든다. 이로 인하여 단채널에서는 In 조성이 증가함에 따라 direct source-to-drain tunnelling current이 증가하게 된다. 이로 인하여 In 조성의 증가에 따라 subthreshold swing과 ON-state current가 저하된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.190-192
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• 2007

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.47-47
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• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.406-407
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• 2007

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

• Archives of Metallurgy and Materials
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• v.64 no.3
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• pp.899-905
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• 2019

In this study, molten salt electrorefining was used to recover indium metal from In-Sn crude metal sourced from indium tin oxide (ITO) scrap. The electrolyte used was a mixture of eutectic LiF-KF salt and InF₃ initiator, melted and operated at 700℃. Voltammetric analysis was performed to optimize InF₃ content in the electrolyte, and cyclic voltammetry (CV) was used to determine the redox potentials of In metal and the electrolyte. The optimum initiator concentration was 7 wt% of InF₃, at which the diffusion coefficients were saturated. The reduction potential was controlled by applying constant current densities of 5, 10, and 15 mA/cm² using chronopotentiometry (CP) techniques. In metal from the In-Sn crude melt was deposited on the cathode surface and was collected in an alumina crucible.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.83-84
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• 1994

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2571-2572
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• 2013

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.40-41
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• 1992