• Journal of the Korean Chemical Society
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• v.43 no.1
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• pp.52-57
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• 1999

The anionic complexes, [ln($C_6F_5)_4$]-, which are thermal and moisture sensitive, have been prepared by the reaction of In($C_6F_5)_3{\cdot}D(D=CH_3CN$, O($C_2H_5)_2$) with the system ($CH_3)_3SiC_6F_5$/CsF, $C_6F_5$MgBr or Cd($C_6F_5)_2$. The stable anionic indium(III) complexes are obtained through cation exchange with PNPCI ([PNP]= bis(triphenylphosphino)ammonium). The pure substance is obtained by column chromatography. These new anionic complexes are unambiguously identifed by NMR-spectroscopy, IR spectroscopy, molecular weight, DTA/TG and elemental analysis.

• Advances in nano research
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• v.2 no.4
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• pp.179-186
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• 2014

Indium-nitrogen co-doped zinc oxide thin films (INZO) were prepared on glass substrates in the atmosphere by ultrasonic spray pyrolysis. The aqueous solution of zinc acetate, ammonium acetate and different indium sources: indium (III) chloride and indium (III) nitrate were used as the precursors. After film deposition, different anneal temperature treatment as 350, 450, $550^{\circ}C$ were applied. Electrical properties as concentration and mobility were characterized by Hall measurement. The surface morphology and crystalline quality were characterized by SEM and XRD. With the activation energy analysis for both films, the concentration variation of the films at different heat treatment temperature was realized. Donors correspond to zinc related states dominate the conduction mechanism for these INZO films after $550^{\circ}C$ high temperature heat treatment process.

• Journal of the Korean Chemical Society
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• v.35 no.5
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• pp.506-511
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• 1991

A sensitive adsorptive stripping voltammetric study was investigated on the complex of indium with morin at a hanging mercury drop electrode in 0.1 M acetate buffer (pH 3.20) solution. The adsorption phenomena were observed by differential-pulse voltammetry. The effects of various analytical conditions were discussed on the reduction peak current of the adsorbed complex on the surface of HMDE. Interferences by other trace metals and surfactant were also discussed. Detection limit was 2.6 nM of indium after 90 second deposition time, and the relative standard deviation (n = 7) at 4TEX>${\mu}g$/l indium was 2.0%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• Current Applied Physics
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• v.18 no.12
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• pp.1558-1563
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• 2018

We demonstrate improved surface pit and phase separation in thick InGaN grown on a GaN/Si (111) substrate, using plasma-assisted molecular beam epitaxy with an indium modulation technique. The formation of surface pit and compositional inhomogeneity in the InGaN epilayer are investigated using atomic force microscopy, scanning electron microscopy and temperature-dependent photoluminescence. Indium elemental mapping directly reveals that poor compositional homogeneity occurs near the pits. The indium-modulation epitaxy of InGaN minimizes the surface indium segregation, leading to the reduction in pit density and size. The phase separation in InGaN with a higher pit density is significantly suppressed, suggesting that the pit formation and the phase separation are correlated. We propose an indium migration model for the correlation between surface pit and phase separation in InGaN.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.711-712
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• 2005

• Resources Recycling
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• v.10 no.5
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• pp.3-7
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• 2001

Indium frequently associated with the semiconductor industry is becoming an important metal element widely used in industry. In this paper, its properties especially in relation to its recovery from scrap are reviewed and discussed. Also presented in this paper is how best indium can be recovered by the hydrometallurgical means.

• Bulletin of the Korean Chemical Society
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• v.23 no.9
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• pp.1285-1290
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• 2002

Various nitrobenzaldehydes were simultaneously allylated and reduced using indium in the presence of HCl in aqueous media to give compounds having both functionality of homoallylic alcohol and aromatic amine. Sequential protection of the amino gro up and oxidation of the anilinyl homoallylic alcohol provided useful precursors of heterocyclic compounds such as dihydroindolones and dihydroquinolones, which could be efficiently synthesized through intramolecular cyclization reaction.