• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.49-54
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• 1998

The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.

• 한국대기환경학회지
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• 제21권1호
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• pp.49-62
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• 2005

Lake Paldang is a main resource of drinking water for 20 million people in the greater Seoul area. Dry deposition amounts of nitrogen and sulfur were estimated for three typical days in each season over the watershed of Lake Paldang. Models- 3/CMAQ (Community Multiscale Air Quality) and MM5 (Mesoscale Model) were used to predict air quality and meteorology, respectively. Aerosols as well as gaseous pollutants were considered. Nitrogen was mainly deposited in the form of HNO, while most of sulfur was deposited in the form of SO$_2$. Contribution of secondary pollutants was the largest in fall since they were transported from the greater Seoul area. However, contribution of secondarily-formed particulate pollutants to the nitrogen deposition was the largest in winter because semi-volatile ammonium nitrate favors lower temperature. Annual deposition amounts of nitrogen and sulfur were 37% and 26% of their emission amounts, respectively, over the watershed of Lake Paldang. Higher value of the nitrogen deposition showed a more influence of pollutants emitted in the greater Seoul area.

• 한국표면공학회지
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• 제44권4호
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• 한국토양비료학회지
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• 제46권6호
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• pp.570-574
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• 2013

This study was conducted to assess $N_2O$ emissions in agricultural soils of Korea under the 1996 IPCC (Intergovernmental Panel on Climate Change) methodology. $N_2O$ emissions in agricultural soils were calculated the sum of direct emission and indirect emission by the N sources and emissions by field burning of crop residues. $N_2O$ emission was highest in animal manure as 1,547 $CO_2$-eq Gg. Indirect emissions by atmospheric deposition and leaching and runoff were 1,463 and 1,753 $CO_2$-eq Gg, respectively. $N_2O$ emission by field burning of crop residues was highest in pepper due to the residue/crop ratio and field burning ratio.

• 한국태양에너지학회 논문집
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• 제39권1호
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• 콘크리트학회논문집
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• 제21권6호
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• pp.689-696
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• 2009

최근 들어 균열 치유 향상도의 가속화 방안으로서 전기 화학적 전착 기법을 활용한 인공 균열 치유방법에 관한 실험연구가 수행되고 있다. 이 연구에서는 고내구성 콘크리트의 설계 및 유지관리를 위한 방안으로서 혼합콘크리트의 사용에 따른 인공 균열 치유방법상의 부식방식 모니터링의 비교 및 균열 치유향상도의 분석을 수행하였다. 이를 위해 철근콘크리트내로의 가압전류의 특성분석, 가용 전해질의 특성분석, 갈바닉 전류 모니터링, 선형분극저항측정 비교, 균열 치유 전/후의 치유향상도의 사진화상분석등을 통해 혼합 콘크리트의 인공 균열 치유기법 적용에 따른 치유 향상도를 실험적 연구로서 수행하였다. 실험결과로부터, 인공균열치유에 의한 가압전류 측면에서 20,000 min의 통전시간에 따라 점차적으로 가압전압값이 증가하면서 2.9 V로 물/시멘트비에 관계없이 수렴하고 있음을 알수 있었고, 갈바닉전류 모니터링에 따른 부식지연성은 W/C의 경우에 0.4 $>$ 0.5 $>$ 0.6의 순서로, 결합재별 비교에 있어서는 OPC $>$ 60%GGBS $>$ 10%SF $>$ 30% PFA의 순서로 나타남을 알 수 있었다. 한편 전기화학적 전착기법에 의한 치유후 기존 균열면적의 76.47%가 치유됨을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1349-1351
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• 2001

Polycrystalline diamond films are deposited by using a microwave plama CVC system, where the bias-enhanced nucleation (BEN) method is employed. Effects of the varying microwave power, the surface treatment by hydrogen plasma, and the cyclic hydrogen etching during deposition on the crystallinity as well as on the surface roughness of deposited films are examined by Raman spectroscopy, SEM, and AFM. A novel method for achieving a smoother diamond surface is also suggested through the indirect wafer bonding and back-side polishing.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.

• 한방비만학회지
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• 제5권1호
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• pp.133-140
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• 2005

The prevalence of obesity at all ages in increasing epidemically worldwide. There were many study of an indirect method on fat mass measurement in obesity, but were few study to determine the possible relationships between local fat deposition and health-related fitness parameters in overweight and obesity. We has reviewed on the somatotype characteristics, ideal posture and biomechanics, and adipose tissue of connective tissue, myofacia continuity. We consider that these unique 'whole systems' view is of vital importance to understanding the role of adipose tissue in musculoskeletal system and to application of body shape correction program.

• 한국토양비료학회지
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• 제44권6호
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• pp.1207-1213
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• 2011

우리나라 농경지에서의 $N_2O$ 배출량을 1996과 2006 IPCC 방법론에 준하여 직접배출과 간접배출로 구분하여 산정하였다. 배출량 산정을 위한 활동자료는 농림수산식품부의 농림수산식품통계연보를 활용하였고, 배출계수는 1996 IPCC와 2006 IPCC에서 제시하고 있는 기본계수를 활용하였다. 직접배출량을 질소 투입원별로 산정한 결과 논과 밭에서 화학비료 시용에 의한 $N_2O$ 배출량은 각각 159,579 $CO_2$-eq Mg과 976,460 $CO_2$-eq Mg이었고, 축산분뇨 시용에 따른 $N_2O$ 배출량은 1,465,363 $CO_2$-eq Mg이었다. 두과작물의 질소 고정에 따른 $N_2O$ 배출량은 52,395 $CO_2$-eq Mg이었고, 작물잔사 환원에 의한 $N_2O$ 배출량은 14,562 $CO_2$-eq Mg 이었다. 간접배출에 의한 $N_2O$ 배출량을 대기 유출과 수계 유출로 구분하여 산정된 양은 각각 1,415,881 $CO_2$-eq Mg과 1,864,043 Mg이었다. 우리나라 농경지의 $N_2O$ 총배출량은 5,948,284 $CO_2$-eq Mg으로 직접배출량은 44.9%, 간접배출량은 55.1%를 차지하였으며, 경종부문 온실가스 전체 배출량의 48.7%를 점유하였다.