• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Journal of Sensor Science and Technology
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• v.27 no.2
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• pp.76-81
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• 2018

Au@ZnO core-shell nanoparticles (NPs) were prepared by a simple method followed by heat-treatment for gas sensor applications. The advantage of the core-shell morphology was investigated by comparing the gas sensing performances of Au@ZnO core-shell NPs with pure ZnO NPs and different wt% of Au-loaded ZnO NPs. The crystal structures, shapes, sizes, and morphologies of all sensing materials were characterized by XRD, TEM, and HAADF-STEM. Au@ZnO core-shell NPs were nearly spherical in shape and Au NPs were encapsulated in the center with a 40-45 nm ZnO shell outside. The gas sensing operating temperature for Au@ZnO core-shell NPs was $300^{\circ}C$, whereas it was $350^{\circ}C$ for pure ZnO NPs and Au-loaded ZnO NPs. The maximum response of Au@ZnO core-shell NPs to 1000 ppm CO at $300^{\circ}C$ was 77.3, which was three-fold higher than that of 2 wt% Au-loaded ZnO NPs. Electronic and chemical effects were the primary reasons for the improved sensitivity of Au@ZnO core-shell NPs. It was confirmed that Au@ZnO core-shell NPs had better sensitivity and stability than Au-loaded ZnO NPs.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.49-53
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• 2022

In this study, quantum dot light-emitting diodes (QLEDs) of the optimized EL performance with a radio frequency (RF) sputtered Zn_0.85Mg_0.15O thin film as an electron transport layer (ETL). In typical QLEDs, ZnO nanoparticles (NPs) are widely used materials for ETL layer due to their advantages of high electron mobility, suitable energy level and easy capable of solution processing. However, the instability problem of solution-type ZnO NPs has not yet been resolved. To solve this problem, ZnMgO thin film doped with 15% Mg of ZnO was fabricated by RF sputtering and optimized for the device applied as an ETL. The QLEDs of optimized ZnMgO thin film exhibited a maximum luminance of 15,972 cd/m² and a current efficiency of 7.9 cd/A. Efficient QLEDs using sputtering ZnMgO thin film show the promising results for the future display technology.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.949-956
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• 1997

With the increase of ZnO content, burnability of raw materials was improved and the formation of clinker minerals was accellerated. When ZnO was added 1wt%, the clinkering temperature was decreased about 30~5$0^{\circ}C$. As an increase of ZnO added, aluminate phase was decreased and ferrite phase was increased. When ZnO was added more than 3.0wt.%, the new phases, such as ZnO.Al2O3 and ZnO.Fe2O3 were formed. In the excess of amount of ZnO added, the decomposition of alite phase was intensed and the lamella structure in belite could not be observed due to the decomposition.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.101-106
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• 1992

Sintering behavior, distribution of dopant oxides and electrical properties in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems were studied. The linear shrinkage of ZnO varistors from 850 to 950$^{\circ}C$ was related to the decomposition reaction (py\longrightarrowsp+Bi2O3) of the pyrochlore phase. In the distribution of the dopant oxides (CoO, Sb2O3, Cr2O3), Co distribute uniformly throughout the sample, the distribution of Sb coincided with small particles (spinel phase, Zn7Sb2O12), and Cr distributed very consistently with Sb. The increase in breakdown voltage, due to the addition of Cr2O3, was not only attributed to the decrease in the ZnO grain size but also to the solution of Cr2O3 in the spinel phase. The leakage current (80% V60 ${\mu}\textrm{A}$) was increased by the addition of Cr2O3.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.610-616
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• 2011

A series of polyurethane acrylate/ZnO (PUA/ZnO) nanocomposite films with different ZnO contents were successfully prepared via a UV-curing system. The synthesis and physical properties including morphological structure, thermal properties, barrier properties and optical properties, and antimicrobial properties were investigated as a function of ZnO concentration. FTIR and SEM results showed that these PUA/ZnO nanocomposite films did not have a strong interaction between PUA and ZnO, which may lead to no increase in thermal stability. By incorporating ZnO nanoparticles, the UV blocking and antibacterial properties increased as the content of ZnO increased. Specially, the oxygen permeability in composite films changed from $2005cc/m^2/day$ to $150cc/m^2/day$ by adding the ZnO nanoparticle, which indicates that the PUA/ZnO nanocomposite films can be applied as good barrier packaging materials. Physical properties of the UV-cured PUA/ZnO nanocomposite film are strongly dependent upon the dispersion state of ZnO nanoparticles and their morphology in the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.436-439
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• 1997

We investigated a electrical and CO gas sensing properties of pure ZnO and ZnO-ZrO$_2$ composite ceramics. We made 0∼20mo1% ZrO$_2$added ZnO composite ceramics and observed a microstructure of the broken side of the samples. The properties of the samples were studied with temperature, composition, arid a concentration of carbon monoxid. The measured 1000ppm CO sensitivities of pure ZnO were about 1∼1.42, and that of ZnO-ZrO$_2$were about 1∼10.6. In order words, the 1000ppm CO sensitivities of ZnO-ZrO$_2$composite ceramics were about 1∼2 times larger than that of pure ZnO with temperature. The measured 250ppm, 500ppm CO sensitivities of ZnO-ZrO$_2$composite ceramics were about ∼3.28. ∼5.04, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.10
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• pp.1488-1493
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• 2017

Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on $SiO_2/Si$ wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.