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Effects of Ag on the Characteristics of Sn48In52Agx (wt%) Low-Melting Solders for Photovoltaic Ribbon (태양광 리본용 Sn48In52Agx (wt%) 저융점 솔더의 특성에 미치는 Ag의 영향)

  • Seung-Han Lee;Dong-Hyeon Shin;Tae-Sik Cho;Il-Sub Kim
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.1
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    • pp.74-78
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    • 2024
  • We have studied the effects of Ag on the characteristics of Sn48In52Agx (wt%) low-melting solders for photovoltaic ribbons. The Sn48In52 (wt%) solder coexisted in the InSn4 and In3Sn alloys. Ag atoms added in the solder formed an AgIn2 alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn48In52Agx (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn48In52 (wt%) solder was 53.6 N/mm2, and that of the Sn48In52Ag1 (wt%) solder largely increased to 125.1 N/mm2. In the meanwhile, the melting temperature of the Sn48In52 (wt%) solder was 119.2℃, and that of the Sn48In52Ag1 (wt%) solder decreased to 114.0℃.

Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors (In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구)

  • Rho, Tae-Beom;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.324-327
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    • 2020
  • The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.

RESULTS ON THE ALGEBRAIC DIFFERENTIAL INDEPENDENCE OF THE RIEMANN ZETA FUNCTION AND THE EULER GAMMA FUNCTION

  • Xiao-Min Li;Yi-Xuan Li
    • Bulletin of the Korean Mathematical Society
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    • v.60 no.6
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    • pp.1651-1672
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    • 2023
  • In 2010, Li-Ye [13, Theorem 0.1] proved that P(ζ(z), ζ'(z), . . . , ζ(m)(z), Γ(z), Γ'(z), Γ"(z)) ≢ 0 in ℂ, where m is a non-negative integer, and P(u0, u1, . . . , um, v0, v1, v2) is any non-trivial polynomial in its arguments with coefficients in the field ℂ. Later on, Li-Ye [15, Theorem 1] proved that P(z, Γ(z), Γ'(z), . . . , Γ(n)(z), ζ(z)) ≢ 0 in z ∈ ℂ for any non-trivial distinguished polynomial P(z, u0, u1, . . ., un, v) with coefficients in a set Lδ of the zero function and a class of nonzero functions f from ℂ to ℂ ∪ {∞} (cf. [15, Definition 1]). In this paper, we prove that P(z, ζ(z), ζ'(z), . . . , ζ(m)(z), Γ(z), Γ'(z), . . . , Γ(n)(z)) ≢ 0 in z ∈ ℂ, where m and n are two non-negative integers, and P(z, u0, u1, . . . , um, v0, v1, . . . , vn) is any non-trivial polynomial in the m + n + 2 variables u0, u1, . . . , um, v0, v1, . . . , vn with coefficients being meromorphic functions of order less than one, and the polynomial P(z, u0, u1, . . . , um, v0, v1, . . . , vn) is a distinguished polynomial in the n + 1 variables v0, v1, . . . , vn. The question studied in this paper is concerning the conjecture of Markus from [16]. The main results obtained in this paper also extend the corresponding results from Li-Ye [12] and improve the corresponding results from Chen-Wang [5] and Wang-Li-Liu-Li [23], respectively.

Involvement of α1B-adrenoceptors and Rho kinase in contractions of rat aorta and mouse spleen

  • Hadeel A. Alsufyani;James R. Docherty
    • The Korean Journal of Physiology and Pharmacology
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    • v.27 no.4
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    • pp.325-331
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    • 2023
  • α1-adrenoceptors link via the G-protein Gq/G11 to both Ca2+ entry and release from stores, but may also activate Rho kinase, which causes calcium sensitization. This study aimed to identify the subtype(s) of α1-adrenoceptor involved in Rho kinase-mediated responses in both rat aorta and mouse spleen, tissues in which contractions involve multiple subtypes of α1-adrenoceptor. Tissues were contracted with cumulative concentrations of noradrenaline (NA) in 0.5 log unit increments, before and in the presence of an antagonist or vehicle. Contractions produced by NA in rat aorta are entirely α1-adrenoceptor mediated as they are competitively blocked by prazosin. The α1A-adrenoceptor antagonist RS100329 had low potency in rat aorta. The α1D-adrenoceptor antagonist BMY7378 antagonized contractions in rat aorta in a biphasic manner: low concentrations blocking α1D-adrenoceptors and high concentrations blocking α1B-adrenoceptors. The Rho kinase inhibitor fasudil (10 µM) significantly reduced aortic contractions in terms of maximum response, suggesting inhibition of α1B-adrenoceptor mediated responses. In the mouse spleen, a tissue in which all 3 subtypes of α1-adrenoceptor are involved in contractions to NA, fasudil (3 µM) significantly reduced both early and late components to the NA contraction, the early component involving α1B- and α1D-adrenoceptors, and the late component involving α1B- and α1A-adrenoceptors. This suggests that fasudil inhibits α1B-adrenoceptor mediated responses. It is concluded that α1D- and α1B-adrenoceptors interact in rat aorta and α1D-, α1A- and α1B-adrenoceptors interact in the mouse spleen to produce contractions and these interactions suggest that one of the receptors preferentially activates Rho kinase, most likely the α1B-adrenoceptor.

Bernoulli and Euler Polynomials in Two Variables

  • Claudio Pita-Ruiz
    • Kyungpook Mathematical Journal
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    • v.64 no.1
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    • pp.133-159
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    • 2024
  • In a previous work we studied generalized Stirling numbers of the second kind S(a2,b2,p2)a1,b1 (p1, k), where a1, a2, b1, b2 are given complex numbers, a1, a2 ≠ 0, and p1, p2 are non-negative integers given. In this work we use these generalized Stirling numbers to define Bernoulli polynomials in two variables Bp1,p2 (x1, x2), and Euler polynomials in two variables Ep1p2 (x1, x2). By using results for S(1,x2,p2)1,x1 (p1, k), we obtain generalizations, to the bivariate case, of some well-known properties from the standard case, as addition formulas, difference equations and sums of powers. We obtain some identities for bivariate Bernoulli and Euler polynomials, and some generalizations, to the bivariate case, of several known identities for Bernoulli and Euler numbers and polynomials of the standard case.

Effects of Ga doping on the superconducting properties of (B1-xGax) (Ba1.25Sr0.75)(Ca0.5Er0.5)Cu2Oz

  • Ho Keun Lee
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.4
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    • pp.14-18
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    • 2023
  • We have investigated the behavior induced by Ga substitution in B-1212 system and observed an anomalous superconductor-like resistivity drop with an onset near 260 K and an offset at 248 K in the nominal (B0.65Ga0.35)(Ba1.25Sr0.75)(Er0.5Ca0.5)Cu2Oz compound. However, this property degraded with repeated cycling. Systematic studies of the superconducting properties of the (B1-xGax)(Ba1.25Sr0.75)(Er0.5Ca0.5)Cu2Oz compounds are reported and discussed in the context of the anomalous resistivity transition.

Investigation of Nanometals (Ni and Sn) in Platinum-Based Ternary Electrocatalysts for Ethanol Electro-oxidation in Membraneless Fuel Cells

  • Ponmani, K.;Kiruthika, S.;Muthukumaran, B.
    • Journal of Electrochemical Science and Technology
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    • v.6 no.3
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    • pp.95-105
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    • 2015
  • In the present work, Carbon supported Pt100, Pt80Sn20, Pt80Ni20 and Pt80Sn10Ni10 electrocatalysts with different atomic ratios were prepared by ethylene glycol-reduction method to study the electro-oxidation of ethanol in membraneless fuel cell. The electrocatalysts were characterized in terms of structure, morphology and composition by using XRD, TEM and EDX techniques. Transmission electron microscopy measurements revealed a decrease in the mean particle size of the catalysts for the ternary compositions. The electrocatalytic activities of Pt100/C, Pt80Sn20/C, Pt80Ni20/C and Pt80Sn10Ni10/C catalysts for ethanol oxidation in an acid medium were investigated by cyclic voltammetry (CV) and chronoamperometry (CA). The electrochemical results showed that addition of Ni to Pt/C and Pt-Sn/C catalysts significantly shifted the onset of ethanol and CO oxidations toward lower potentials. The single membraneless ethanol fuel cell performances of the Pt80Sn10Ni10/C, Pt80Sn20/C and Pt80Ni20/C anode catalysts were evaluated at room temperature. Among the catalysts investigated, the power density obtained for Pt80Sn10Ni10/C (37.77 mW/cm2 ) catalyst was higher than that of Pt80Sn20/C (22.89 mW/cm2 ) and Pt80Ni20/C (16.77 mW/ cm2 ), using 1.0 M ethanol + 0.5 M H2SO4 as anode feed and 0.1 M sodium percarbonate + 0.5 M H2SO4 as cathode feed.

Facile Synthesis of In2S3 Modified Ag3PO4 Nanocomposites with Improved Photoelectrochemical Properties and Stabilities

  • Zeng, Yi-Kai;Bo, Shenyu;Wang, Jun-hui;Cui, Bin;Gu, Hao;Zhu, Lei;Oh, Won-Chun
    • Korean Journal of Materials Research
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    • v.30 no.11
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    • pp.601-608
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    • 2020
  • In this work, Ag3PO4/In2S3 nanocomposites with low loading of In2S3 (5-15 wt %) are fabricated by two step chemical precipitation approach. The microstructure, composition and improved photoelectrochemical properties of the as-prepared composites are studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photocurrent density, EIS and amperometric i-t curve analysis. It is found that most of In2S3 nanoparticles are deposited on the surfaces of Ag3PO4. The as-prepared Ag3PO4/In2S3 composite (10 wt%) is selected and investigated by SEM and TEM, which exhibits special morphology consisting of lager size substrate (Ag3PO4), particles and some nanosheets (In2S3). The introduction of In2S3 is effective at improving the charge separation and transfer efficiency of Ag3PO4/In2S3, resulting in an enhancement of photoelectric behavior. The origin of the enhanced photoelectrochemical activity of the In2S3-modified Ag3PO4 may be due to the improved charge separation, photocurrent stability and oriented electrons transport pathways in environment and energy applications.

Hydrogen sensor using Pt-loaded porous In2O3 nanoparticle structures (백금 담지 다공성 산화인듐 나노입자 구조를 이용한 수소센서)

  • Sung Do Yun;Yoon Myung;Chan Woong Na
    • Journal of Surface Science and Engineering
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    • v.56 no.6
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    • pp.420-426
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    • 2023
  • We prepared a highly sensitive hydrogen (H2) sensor based on Indium oxides (In2O3) porous nanoparticles (NPs) loaded with Platinum (Pt) nanoparticle in the range of 1.6~5.7 at.%. In2O3 NPs were fabricated by microwave irradiation method, and decorations of Pt nanoparticles were performed by electroless plating on In2O3 NPs. Crystal structures, morphologies, and chemical information on Pt-loaded In2O3 NPs were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, respectively. The effect of the Pt nanoparticles on the H2-sensing performance of In2O3 NPs was investigated over a low concentration range of 5 ppm of H2 at 150-300 ℃ working temperatures. The results showed that the H2 response greatly increased with decreasing sensing temperature. The H2 response of Pt loaded porous In2O3 NPs is higher than that of pristine In2O3 NPs. H2 gas selectivity and high sensitivity was explained by the extension of the electron depletion layer and catalytic effect. Pt loaded porous In2O3 NPs sensor can be a robust manner for achieving enhanced gas selectivity and sensitivity for the detection of H2.

Influence of various concentrations of aflatoxin B1 on in vitro rumen fermentation of a buffalo diet

  • Singh, Ram;Park, Sungkwon;Koo, Jin Su;Balasubramanian, Balamuralikrishnan
    • Korean Journal of Agricultural Science
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    • v.47 no.1
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    • pp.131-138
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    • 2020
  • The aim of this study was to evaluate the effect of aflatoxin B1 (AFB1) on in vitro rumen fermentation at various dose levels of 0 (T1), 100 (T2), 200 (T3), and 300 (T4) ppb in a wheat straw-based buffalo diet. The results show that the truly degradable dry matter, truly degradable organic matter, gas production, microbial biomass production and partitioning factor values in the control group (T1) were higher (p < 0.05) than those of the T2, T3, and T4 groups. The total volatile fatty acids, acetate, propionate, and butyrate values in the control group (T1) were higher (p < 0.05) than those of the T2, T3, and T4 groups. The partitioning factor value in the control group (T1) was higher (p < 0.05) than those of the T2, T3, and T4 groups. The partitioning factor values of the T2 and T3 groups were higher (p < 0.05) than that of the T4 group. There was no significant variation in the partitioning factor value between the T2 and T3 group. The acetate : propionate (A : P) ratio in the control group (T1) was lower (p < 0.05) than those of the T2, T3, and T4 groups. The A : P ratio in the T2 group was lower (p < 0.05) than those of the T3 and T4 groups. It was concluded that different levels of AFB1 contamination in feed significantly affect the in vitro rumen fermentation characteristics. Thus, these findings could help to determine the influences of AFB1 in a wheat straw-based buffalo diet. Additionally, it is necessary to manage AFB1 contamination in ruminants.