• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.321-323
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• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.53.2-53.2
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• 2011

Dye-sensitized solar cells(DSSCs) have been recognized as an alternative to the conventional p-n junction solar cells because of their simple fabrication process, low production cost, and transparency. A typical DSSC consists of a transparent conductive oxide (TCO) electrode, a dye-sensitized oxide semiconductor nanoparticle layer, liquid redox electrolyte, and a Pt-counter electrode. In dye-sensitized solar cells, charge recombination processes at interfaces between coducting glass, $TiO_2$, dye, and electrolyte play an important role in limiting the photon-to-electron conversion efficiency. A layer of ZTO thin film less than ~200nm in thickness, as a blocking layer, was deposited by DC magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells(DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/I_3^-$). The presented DSCs were fabricated with working electrode of Ga-doped ZnO glass coated with blocking ZTO layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited GZO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.258-258
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• 2016

최근 디스플레이 산업의 발전에 따라 고성능 디스플레이가 요구되며, 디스플레이의 백플레인 (backplane) TFT (thin film transistor) 구동속도를 증가시키기 위한 연구가 활발히 진행되고 있다. 트랜지스터의 구동속도를 증가시키기 위해 높은 이동도는 중요한 요소 중 하나이다. 그러나, 기존 백플레인 TFT에 주로 사용된 amorphous silicon (a-Si)은 대면적화가 용이하며 가격이 저렴하지만, 이동도가 낮다는 (< $1cm2/V{\cdot}s$) 단점이 있다. 따라서 전기적 특성이 우수한 산화물 반도체가 기존의 a-Si의 대체 물질로써 각광받고 있다. 산화물 반도체는 비정질 상태임에도 불구하고 a-Si에 비해 이동도 (> $10cm2/V{\cdot}s$)가 높고, 가시광 영역에서 투명하며 저온에서 공정이 가능하다는 장점이 있다. 하지만, 차세대 디스플레이 백플레인에서는 더 높은 이동도 (> $30cm2/V{\cdot}s$)를 가지는 TFT가 요구된다. 따라서, 본 연구에서는 차세대 디스플레이에서 요구되는 높은 이동도를 갖는 TFT를 제작하기 위하여, amorphous In-Ga-Zn-O (a-IGZO) 채널하부에 화학적으로 안정하고 전도성이 뛰어난 SnO2 채널을 얇게 형성하여 TFT를 제작하였다. 표준 RCA 세정을 통하여 p-type Si 기판을 세정한 후, 열산화 공정을 거쳐서 두께 100 nm의 SiO2 게이트 절연막을 형성하였다. 본 연구에서 제안된 적층된 채널을 형성하기 위하여 5 nm 두계의 SnO2 층을 RF 스퍼터를 이용하여 증착하였으며, 순차적으로 a-IGZO 층을 65 nm의 두께로 증착하였다. 그 후, 소스/드레인 영역은 e-beam evaporator를 이용하여 Ti와 Al을 각각 5 nm와 120 nm의 두께로 증착하였다. 후속 열처리는 퍼니스로 N2 분위기에서 $600^{\circ}C$의 온도로 30 분 동안 실시하였다. 제작된 소자에 대하여 TFT의 전달 및 출력 특성을 비교한 결과, SnO2 층을 형성한 TFT에서 더 뛰어난 전달 및 출력 특성을 나타내었으며 이동도는 $8.7cm2/V{\cdot}s$에서 $70cm2/V{\cdot}s$로 크게 향상되는 것을 확인하였다. 결과적으로, 채널층 하부에 SnO2 층을 형성하는 방법은 추후 높은 이동도를 요구하는 디스플레이 백플레인 TFT 제작에 적용이 가능할 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.110-115
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• 2010

Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], $Ga_2O_3$ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[$^{\circ}C$], Ar flow rate of 50[sccm], $O_2$ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of $2.536{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $7.746{\times}10^{20}[cm^{-3}]$, and a carrier mobility of 31.77[$cm^2/V{\cdot}S$], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Journal of Information Display
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• v.13 no.4
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• pp.179-183
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• 2012

In this paper, a gate driver circuit for In-Ga-Zn-O thin-film transistors (TFTs) driven by only two clock signals is reported. In this circuit, the TFTs are turned off with a negative $V_{GS}$ by the two clock signals. As a result, it works properly and suppresses power consumption increase even though the TFT $V_T$ shifts in the negative direction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.426-426
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• 2012

The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.137-137
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.