• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.4
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• pp.129-133
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• 2020

In this paper, a temperature compensation circuit is presented in order to mitigate gain variability due to temperature in the W-band low-noise amplifier (LNA). The proposed cascode temperature compensation bias circuit automatically controls gate bias voltages of the common-source LNA in order to suppress variations of small-signal gain. The designed circuit was realized in a 100-nm GaAs pHEMT process. The simulated voltage gain of W-band LNA including the proposed bias circuit is >20 dB with gain variability less than ±0.8 dB in the range of temperatures between -35 to 71℃. We expect that the proposed circuit contributes to millimeter-wave receivers for stable performances in radar applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.227-231
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• 2004

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the schottky diode of InGaAs/CaAs p-HEMT process has been developed for receiver down converter of Ka-band. A different approach of MMIC mixer structure is applied for reducing the chip size by the exchange of ports between IF and LO. This MMIC covers with RF (30.6∼31.0㎓)and IF (20.8∼21.2㎓). According to the on-wafer measurement, the MMIC mixer with miniature size of 3.0mm1.5mm demonstrates conversion loss below 7.8㏈, LO-to-RF isolation above 27㏈, LO-to-IF isolation above 19㏈ and RF-to-IF isolation above 39㏈, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.57-62
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• 2005

This paper describes the design of a high performance microwave single pole double throw (SPDT) monolithic microwave integrated circuit switch using GaAs pHEMT process. The switch design proposes a novel coplanar waveguide (CPW) impedance transform network which results in the low insertion loss and high isolation by compensating for the FET parasitics to get the low on-resistance and low off-capacitance. The proposed switch has the measured isolation of better than 24 dB and insertion loss of less than 2.6 dB from 53 to 61 GHz. The chip is fabricated with the size of 2.2mm $\times$ 1.6 mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.5
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• pp.504-514
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• 2014

An MMIC multi-function chip with a low DC power consumption for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a compact size of $16mm^2(4mm{\times}4mm)$ exhibits a gain of 10 dB and a P1dB of 14 dBm from 7 GHz to 11 GHz with a DC low power consumption of only 0.6 W. The RMS(Root Mean Square) errors for the 64 states of the 6-bit phase shift and attenuation were measured to $3^{\circ}$ and 0.6 dB, respectively over the frequency.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.154.2-154.2
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• 2008

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.97-101
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• 2011

Quad band p-HEMT SP6T switch for handset applications was developed. To achieve the low insertion loss and high isolation, trade-off between "On" state and "Off" state was considered by optimization of unit cell. Especially, in case isolation between transmit port and receive port, it was achieved by large capacitors and miniaturization of chip size was achieved by common voltage control and ground using back via process. Designed SP6T switch has size of $950um{\times}100um$ and take into consideration the gate recess error, excellent loss and isolation was confirmed in operating frequency.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.179-182
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• 2000

BWLL용 Ka-Band MMIC 저잡음 증폭기 칩을 InGaAs/GaAs 0.15um Gate 길이의 p-HEMT 공정을 이용하여 개발하였다. 칩 크기 2.5$\times$1.5$\textrm{mm}^2$의 2단으로 설계된 칩의 On-wafer 측정 결과, 24～27 GHz BWLL 주파수 대역에서 최소 19$\pm$0.2dB 이득과 최대 1.7dB의 잡음 지수와 최소 13dB의 반사손실의 특성을 얻었다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.279-282
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• 2001

Ka-Band MMIC Mixer 칩 을 InGaAs/GaAs p-HEMT 공정의 Schottky Diode을 이용하여 개발하였다 설계된 칩은 상/하향 주파수 변환기로 사용할 수 있으며 Double Balance 구조로 되어있다. 크기 3.0$\times$2.4 $\textrm{mm}^2$ 칩의 On-wafer측정 결과, RF주파수 24～27 GHz와 LO주파수 16.28 GHz, IF 주파수 7.72～10.72GHz 상/하향에 대해서, 변환손실 <7dB와 Port별 격리도 >20dBc의 특성을 얻었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.53-61
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• 2014

In this paper, we present the design, fabrication and measurement of high efficiency GaN HEMT power amplifier using harmonic matching technique. In order to achieve high efficiency, harmonic load-pull simulation is performed, that is, the optimum load impedances are determined at $2^{nd}$ and $3^{rd}$ harmonic frequencies as well as at the fundamental. Then, the output matching circuit is designed based on harmonic load-pull simulation. The measurement of the fabricated power amplifier shows the linear gain of 20 dB and $P_{1dB}$(1 dB gain compression point) of 33.7 dBm at 1.85 GHz. The maximum power added efficiency(PAE) of 80.9 % is achieved at the output power of 38.6 dBm, which belongs to best efficiency performance among the reported high efficiency power amplifiers. For W-CDMA input signal, the power amplifier shows a PAE of 27.8 % at the average output power of 28.4 dBm, where an ACLR (Adjacent Channel Leakage Ratio) is measured to be -38.8 dBc. Digital predistortion using polynomial fitting was implemented to linearize the power amplifiers, which allowed about 6.2 dB improvement of an ACLR performance.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.