• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.636-639
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• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.41-45
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• 2003

Impurities transmuted in GaN thin film and GaN nanowires after neutron irradiation are studied in this work. The structural properties of GaN nanowires were shown using by Transmission Electron Microscope(TEM). Transmuted impurities that are expected to be doped into GaN thin film and GaN nanowires are then confirmed by photoluminescence(PL). Transmuted atom in GaN materials is Ge atom, Ge-related peaks in GaN thin film lead to emit at 2.9eV, 2.25eV. But emission bands at 2.9eV, 2.25eV are not shown in PL spectra of GaN nanowires. Our experimental results are expected to give deep impact on nano-material doping technology for the achievement of the fabrication of nano-devices.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.885-888
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• 2008

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.103-112
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• 2005

In this paper, in order to derive the current-voltage characteristics of n-AlGaN/GaN HEMTs with the piezoelectric and spontaneous polarizations, we suggested analytical solutions for the two-dimensional Poisson equation in the AlGaN and GaN regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing in the quantum well. Obtained expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the cutoff voltage decreases as drain voltage increases. Compared with the conventional models, the present model seems to provide more reasonable explanation for the drain-induced threshold voltage roll-off and the channel length modulation effect.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.285-286
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• 2007

Current distributions according to electrode patterns in vertical structured InGaN/GaN LED (light emitting diode) were investigated quantitatively by utilizing three dimensional electrical circuit modeling method. The uniformity of the injected current density in the active layer was compared among different electrode patterns. It was found that the current uniformity was greatly dependent on the electrode pattern in vertical InGaN/GaN LEDs.

• Korean Journal of Environmental Agriculture
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• v.42 no.4
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• pp.389-395
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• 2023

This study evaluated the effects of gibberellic acid (GA₃) on the growth and quality of creeping bentgrass (Agrostis palustris Huds.). Experimental treatments included a No application of fertilizer and GA₃ (NFG) Control [3 N active ingredient (a.i.) g/m²], 0.3GA₃ (GA₃ 0.3 a.i. mg/m²/200 mL), 0.6GA₃ (GA₃ 0.6 a.i. mg/m²/200 mL), 1.2GA₃ (GA₃ 1.2 a.i. mg/m²/200 mL), and 2.4GA₃ (GA₃ 2.4 a.i. mg/m²/200 mL). Additionally, the study included a 1.5N+GA₃ experiment with similar GA₃ treatments combined with 1.5N a.i. g/m² : NFG, Control (3N a.i. g/m²), 1.5N+ 0.3GA₃ (1.5N a.i. g/m²+GA₃ 0.3 a.i. mg/m²/200 mL), 1.5N+0.6GA₃ (1.5N a.i. g/m²+GA₃ 0.6 a.i. mg/m²/200 mL), 1.5N+1.2GA₃ (1.5N a.i. g/m²+GA₃ 1.2 a.i. mg/m²/ 200 mL), and 1.5N+2.4GA₃ (1.5N a.i. g/m²+GA₃ 2.4 a.i. mg/m²/200 mL). Compared to the NFG, turf color index chlorophyll content was not significantly different (p< 0.05). However, shoot length in 1.2GA₃, 2.4GA₃, 1.5N+0.3GA₃, 1.5N+0.6GA₃, 1.5N+1.2GA₃, and 1.5N+2.4GA₃ treatments increased by 0.8%, 10.6%, 5.15%, 8.3%, 13.5 %, and 21.6%, respectively, compared to the control. As compared to the control, clipping yield in 1.5N+1.2GA₃ and 1.5N+2.4GA₃ treatments increased by 7.1% and 14.3 %, respectively. These results indicated that GA₃ application increased shoot length, with the 1.2GA₃ treatment showing shoot length similar to the control (3N a.i. g /m² ).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.161-162
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• 2011

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 태양전지 연구가 활발히 진행되고 있다. GaN 물질은 높은 전자 이동도와 높은 포화 속도 등 광전자 소자에 유리한 광, 전기적 특성들을 가지고 있다. 또한, In의 함량을 변화시켜가며, 0.7eV에서 3.4eV까지 밴드갭을 조절함으로써, 자외선부터 적외선까지 태양빛 스펙트럼의 대부분을 흡수할 수 있는 장점이 있다. InGaN 태양전지의 효율을 높이기 위해서는 In의 함량을 늘려 밴드갭을 줄이는 것이 중요하다. 하지만 GaN 와 InN 간의 격자 부정합으로 인해 In 함량이 높은 단결정 InGaN 층을 두껍게 성장 하는 것이 어렵다. 때문에 GaN 기반 태양전지 관련 연구 그룹들이 태양전지의 효율 향상을 위해 활성층에 양자우물(MQWs) 구조, Supper Lattice (SLs) 구조와 같이 얇은 InGaN/GaN 층을 주기적으로 반복하여 적층함으로써 높은 조성의 In을 함유한 상질의 InGaN/GaN 층을 성장하는 연구들을 진행해 왔다. 본 연구에서는, p-i-n 구조와 MQW 구조를 갖는 InGaN 기반 태양전지를 제작하여, 각각의 특성을 분석해 봄으로써, In0.1Ga0.9N 태양전지 활성층의 구조에 따른 장/단점에 대해 논의하였다. 먼저 MOCVD를 이용하여 200 nm의 i-In0.1Ga0.9N 활성층을 갖는 p-i-n 구조와 In0.19Ga0.81N/GaN(3 nm/8 nm) MQWs (8 periods) 구조를 갖는 태양전지 에피를 각각 성장하였고, 그 후 공정을 통해 그림 1과 같이 InGaN 태양전지 소자를 제작하였다. 그 후, 각 태양전지의 전류/전압 곡선과 외부양자효율을 측정하여 그림 2와 같은 결과를 얻었다. p-i-n과 MQW 샘플의 외부양자효율은 각각 ~70%, ~25%로 측정 되었다. MQW 샘플의 외부 양자효율이 높지 않음에도 불구하고 p-i-n 구조에 비해 높은 In 함량을 가지고 있으므로, 더 넓은 파장의 빛을 흡수하여, 높은 단락전류(0.778 mA/cm2)를 보이고 있다. 또한 p-i-n 구조에 비해 높은 개방전압(2.3V)를 가지고 있으므로, MQW 샘플이 약 17% 정도 높은 변환효율(1.4%)를 보이고 있다. 이후 추가적으로 p-i-n 과 MQW 구조의 InGaN 태양전지에 나타나는 Voc와 Jsc의 차이를 Polarization 효과를 비롯한 다양한 측면에서 분석해 보고자 한다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.56.2-56.2
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• 2010

An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as $1030^{\circ}C$ and $900^{\circ}C$ were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN.