• 한국산학기술학회논문지
• /
• 제21권1호
• /
• pp.560-567
• /
• 2020

점진판재성형은 금형을 제작하지 않고 판재를 가공하는 방법으로서 빠른 시제품 제작과 소량 생산에 적합한 성형법이다. 이러한 점진판재성형의 공정 변수로 공구 직경, 매 스탭당 Z-방향 깊이, 공구 이송 속도, 공구 회전 속도 등은 성형품의 품질에 크게 영향을 미친다. 본 연구에서는 두께가 1.0mm인 Al3004판재를 사용하여 원뿔절두체(VWACF: Varying Wall Angle Conical Frustum) 모델의 점진성형을 실시하였으며, 각각의 변수들의 조합에서 성형성을 판단하였다. BP신경망 (BPNN: Back Propagation Neural Network)를 기반으로 Minitab 소프트웨어를 사용하여 성형 각도를 예측하는 2 차 수학적 모델을 구축하였다. 또한 이 모델을 유전 알고리즘의 목적함수로 사용하였으며 최대 성형 각도로 얻기 위한 최적의 변수 조합을 찾아내었다. 공구 직경은 6mm, 회전 속도는 180rpm, Z-방향 피치는 0.401mm, 이송 속도는 772.4mm/min일 경우 가장 큰 성형 각도인 87.071°를 갖는 컵을 성형할 수 있었다.

• Bulletin of the Korean Chemical Society
• /
• 제28권9호
• /
• pp.1553-1561
• /
• 2007

The new type of heterometallic chiral polymer salen complexes have been synthesized and it has been found that group 13 metal salts (AlCl3, GaCl3 and InCl3) combined to cobalt salen unit played the crucial role in the asymmetric kinetic resolution of racemic epoxides. Polymeric salen catalysts showed very high reactivity and enantioselectivity for the asymmetric ring opening of terminal epoxide with diverse nucleophiles. They provide the enantiopure useful chiral intermediates such as chiral terminal epoxides and α -aryloxy alcohols in one-step process. An efficient methodology for providing very high enantioselectivity can be achieved in the synthesis of valuable chiral building blocks via our catalytic system by combination of various asymmetric ring opening reactions.

• 대한전자공학회논문지SD
• /
• 제44권9호
• /
• pp.25-33
• /
• 2007

본 논문에서는 높은 격리특성과 광대역 특성을 갖고 IF 발룬을 필요로 하지 않는 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode 믹서를 설계 및 제작하였다. 또한 믹서의 높은 격리특성과 광대역 특성을 위한 94 GHz 대역의 3 dB tandem 커플러를 설계 및 제작하였다. MIMIC single balanced cascode 믹서는 $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor)를 이용하여 설계 및 제작되었다. 제작된 MHEMT는 드레인 전류 밀도 665 mA/mm, 최대 전달컨덕턴스(Gm)는 691 mS/mm를 얻었으며, RF 특성으로 $f_T$는 189 GHz, $f_{max}$는 334 GHz의 양호한 성능을 나타내었다. 94 GHz MIMIC 믹서의 개발을 위해 MHEMT의 비선형 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 MIMIC 믹서를 설계하였다. 설계된 믹서는 본 연구에서 개발된 MHEMT MIMIC 공정을 이용해 제작되었다. 94 GHz MIMIC single balanced cascode 믹서의 측정결과 변환손실 특성은 LO 신호의 크기가 10.9 dBm 일 때 94 GHz에서 9.8 dB의 양호한 특성을 나타내었다. 제작된 믹서의 LO-RF 격리도는 94 GHz에서 29.5 dB 그리고 100 GHz에서 39.5 dB의 측정 결과를 얻었다. 또한 제작된 믹서는 외부의 IF 발룬을 필요하지 않아 소형화가 가능하다. 본 논문에서 설계 및 제작된 94 GHz MIMIC single balanced cascode믹서는 기존의 balanced 믹서와 비교하여 높은 격리 특성을 나타내었다.

• Journal of Periodontal and Implant Science
• /
• 제40권3호
• /
• pp.105-110
• /
• 2010

Purpose: It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods: Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 $J/cm^2$. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results: At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 $J/cm^2$ (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 $J/cm^2$ energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 $J/cm^2$ energy fluency than in the control. Conclusions: The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.

• 한국광학회지
• /
• 제12권2호
• /
• pp.135-142
• /
• 2001

최근 플라스틱 광섬유(Plastic Optical Fiber, POF)가 홈 네트워크(Home Network) 및 LAN(Local Area Network)의 새로운 통신채널로 등장하였다. 특히 PMMA 계에 기반을 둔 언덕형 굴절률 분포 플라스틱 광섬유(Graded Index Plastic Optical Feiber)는 500nm와 650nm 근처에서 아주 적은 손실을 가지므로 이 파장영역에서의 광원으로서 극초단 광펄스 생성이 요구되고 있다. 본 연구에서는 650nm InGaAIP FP(fabry perot) LD와 간단한 RF(radio frequency)소자들을 이용한 회로를 구성하고 이득스위칭 기술을 사용하여 1GHz의 펄스 반복율을 가지고 33.3psec 정도의 짧은 반치선폭(FWHM)을 가지는 광펄스를 생성시키는데 성공하였다. 이득스위칭 된 광펄스는 주입되는 직류전류(DC bias current)와 변조되는 주파에 따라 반치선폭은 33.3-82.8 psec, 펄스 에너지는 0.97-9.69pJ의 값을 얻었다. 또한 CW 발진과 이득스위칭 된 광펄스의 스펙트럼 폭은 각각 0.44nm, 150nm로 됨을 측정하였다. 이러한 결과를 가지는 연속적인 광펄스는 직류전류와 VCO에 의한 변조주파수의 적절한 선택에 따라 초고속 근거리 광통신분야 뿐만 아니라 여러 가지 초고속 광소자 및 전자소자의 특성평가 등에 응용될수 있을 것으로 예상된다.

• 한국통신학회논문지
• /
• 제25권1B호
• /
• pp.8-14
• /
• 2000

광여기 MQW(Multiple Quantum Well)면형 광증폭기에 대한 이득해석과 더불어 제작 및 측정을 수행하였다. 제안된 광증폭기는 편광무의존성, 광섬유와의 높은 결합효율, 그리고 동작파장의 자유도가 높다는 등의 장점을 자니고 있다. 본 논문에서는 100내지 200주기 MQW의 이득특성을 격자왜곡과 선택도핑의 효과를 고려해 해석하였다. 그 결과, 3㏈정도의 단일경로이득과 넓은 동작파장특성을 나타내었으며 이 해석 결과는 우리들이 행한 실험결과와 거의 일치하였다. 면형 광증폭기의 단일경로이득이 낮으면 FPI(Fabry-Perot Interferometer)구조로 증폭률을 높이는데는 협대역성의 문제가 발생하나,2-3㏈이상의 적정한 단일경로이득을 가질 경우, FPI 구조로 고이득과 적정한 동작파장특성을 가지게 할 수 있다. 예를 들면 단일경로이득이 3㏈인 MQW를 FPI 구조로 할 경우, 최대이득 10.1㏈, 동작파장대역이 4.6nm의 특성을 가지도록 할 수 있음을 보였다.

• 전자공학회논문지A
• /
• 제32A권8호
• /
• pp.153-165
• /
• 1995

The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.258-292
• /
• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• 한국결정성장학회지
• /
• 제14권6호
• /
• pp.244-252
• /
• 2004

$CuISe_2$ 단결정 박막은 수평 전기로에서 합성한 $CuInSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $620^{\circ}C$, $410^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 선 요동곡선(DCRC) 으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs 였다. $CuAlSe_2$/Si(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 1.1851 eV-($8.99\times10^{-4} eV/K)T^2$/(T+153k)였다. 광전류 스펙트럼으로 부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.0087eV이며 spin-orbit Δso값은 0.2329 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n = 1일때 $A_1-, B_1$-와 $C_1$-exciton봉우리임을 알았다.

• Advances in nano research
• /
• 제2권3호
• /
• pp.157-172
• /
• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.