• 한국결정성장학회지
• /
• 제9권5호
• /
• pp.475-479
• /
• 1999

Langasite ($La_{3}Ga_{5}SiO_{14}$) was found to have wide application as a promising piezoelectric material. It has high thermal stability of the frequency and large electromechanical coupling factor. For the further development of new compounds with langasite type structure, powders in the La-Al-Si-O system were synthesized by a modified Pechini process. The evolution of the crystalline phase during calcination was studied using TG-DTA, XRD and TEM for the precursor powders. Decomposition proceeded via dehydration and removal of excess solvents at low temperatures ($T<500^{\circ}C$), followed by the crystallization of lanthanum aluminum silicate ($T>800^{\circ}C$) and phase transformation to $LaAlO_{3}$ phase ($T>1200^{\circ}C$). Transmission electron microscopy (TEM) of the calcined powders showed diffuse hollow rings corresponding to an amorphous phase at $800^{\circ}C$ and clear diffraction patterns corresponding to a crystalline phase from the P321 space group ($T<1200^{\circ}C$) and the R3m ($T<1200^{\circ}C$).

• 한국표면공학회지
• /
• 제47권2호
• /
• pp.81-85
• /
• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.156-156
• /
• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.165-165
• /
• 2010

AZO:H films were prepared by RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a temperature of $150^{\circ}C$. The annealing treatments were carried out in hydrogen ambient for 1hr at a temperature of $400^{\circ}C$. The AZO:H films were etched with 1 % HCl. The influence of the properties of AZO:H films deposited in various working pressures is investigated. As a result, the AZO:H film deposited in 4mTorr showed excellent electrical property of $\rho=5.036{\times}10^{-4}{\Omega}cm$ and strongly oriented (002) peak. The transmittance in the wavelength of 450nm was above 80%. It can be used as front electrode for increasing efficiency of GaN LED.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.99-99
• /
• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• ETRI Journal
• /
• 제33권5호
• /
• pp.818-821
• /
• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2005년도 추계종합학술대회
• /
• pp.857-860
• /
• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• 한국전기전자재료학회논문지
• /
• 제36권3호
• /
• pp.298-302
• /
• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• Structural Engineering and Mechanics
• /
• 제51권4호
• /
• pp.547-564
• /
• 2014

This study focuses on the application of an active tuned mass damper (ATMD) for controlling the seismic response of an 11-story building. The control action is achieved by combination of a fuzzy logic controller (FLC) and Particle Swarm Optimization (PSO) method. FLC is used to handle the uncertain and nonlinear phenomena while PSO is used for optimization of FLC parameters. The FLC system optimized by PSO is called PSFLC. The optimization process of the FLC system has been performed for an 11-story building under the earthquake excitations recommended by International Association of Structural Control (IASC) committee. Minimization of the top floor displacement has been used as the optimization criteria. The results obtained by the PSFLC method are compared with those obtained from ATMD with GFLC system which is proposed by Pourzeynali et al. and non-optimum FLC system. Based on the parameters obtained from PSFLC system, a global controller as PSFLCG is introduced. Performance of the designed PSFLCG has been checked for different disturbances of far-field and near-field ground motions. It is found that the ATMD system, driven by FLC with the help of PSO significantly reduces the peak displacement of the example building. The results show that the PSFLCG decreases the peak displacement of the top floor by about 10%-30% more than that of the FLC system. To show the efficiency and superiority of the adopted optimization method (PSO), a comparison is also made between PSO and GA algorithms in terms of success rate and computational processing time. GA is used by Pourzeynali et al for optimization of the similar system.

• 한국지구과학회지
• /
• 제26권8호
• /
• pp.800-808
• /
• 2005

광주광역시 향등지역에서 화강암의 풍화에 따른 토양단면의 지화학적 특성을 파악하기 위하여 11개의 시료를 화학분석 하였다. 모암에서부터 풍화암까지 주성분원소 중 Si, Ca, Na, Mg, P, Mn은 감소하고 Ti, Fe, K는 증가하는 경향을 보인다. 미량성분원소의 경우 Rb, Sr, Pb, Ba은 증가하는 경향을 보이며, As, Co늘 감소하는 경향을 보인다. 또한 Zn, Cr, Ni등은 부분적으로 집적된 경향을 보이나 전체적으로는 모암과 풍화토에서 거의 비슷한 함량을 갖는다. 희토류원소는 전체적으로 상부로 갈수록 증가하는데 경희토류원소(LREE)는 풍화초기에 기반암에서 용탈되어 풍화암(saprock)에서 집적되지만, 중희토류원소(HREE)의 경우는 상대적으로 집적되지 못하여 풍화초기에 약간 감소하는 경향을 나타낸다.