• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.63-73
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• 2004

A simple analytical model has been presented for the study of the optical bistability using a $GaAs-Al_{0.32}Ga_{0.68}As$ multiple quantum well (MQW) p-i-n diode structure. The calculation of the optical absorption is based on a semi-emperical model which is accurately valid for a range of wells between 5 and 20 nm and the electric field F< 200kV/cm . The electric field dependent analytical expression for the responsivity is presented. An attempt has been made to derive the analytical relationship between the incident optical power ( $(P_{in})$ ) and the voltage V across the device when the diode is reverse biased by a power supply in series with a load resistor. The relationship between $P_{in}$ and $P_{out}$ (i.e. transmitted optical power) is also presented. Numerical results are presented for a typical case of well size $L_Z=10.5nm,\;barrier\;size\;L_B=9.5nm$ optical wave length l = 851.7nm and electric field F? 100kV/cm. It has been shown that for the values of $P_{in}$ within certain range, the device changes its state in such a way that corresponding to every value of $P_{in}$ , two stable states and one unstable state of V as well as of $P_{out}$ are obtained which shows the optically controlled bistable nature of the device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.27-32
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• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• Journal of Korean Physical Therapy Science
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• v.8 no.2
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• pp.1005-1013
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• 2001

The present study was designed to investigate the effect of low power GaAlAs laser on spinal Fos expression related to the anti-nociceptive effect of laser stimulation. Low power GaAlAs laser was applied to either acupoint or non-acupoint for 2 hour under light inhalation anesthesia. Spinal Fos expression in the dorsal horn was compared to that obtained in inhalation anesthesia control group. Furthermore, we analyzed the effect of the local treatment of lidocaine on the spinal Fos expression evoked by low power GaAlAs laser stimulation. The results were summarized as follows: 1. In the normal animals, only a few Fos like immunoreactive(Fos-IR) neurons were evident in the lumbar spinal cord dorsal horn. Similarly, following prolonged inhalation anesthesia, Fos-IR neurons were absent in the dorsal horn of the lumbar spinal cord. In animals treated with laser stimulation, Fos immunoreactive neurons were increased mainly in the medial half of ipsilateral laminae I-III at lumbar segments L3-5. These findings directly indicated that prolonged anesthesia used in this study did not affect the Fos expression in the spinal cord dorsal horn of intact animals and low power laser stimulation dramatically produced Fos expression in the spinal cord laminae that are related to the anti-nociceptive effect of laser stimulation. 2. In acupoint stimulated animals, 10mW of laser stimulation, not 3mW and 6mW intensity, significantly increased the number of Fos immunoreactive neurons in the spinal dorsal horn(p<0.05). However, laser stimulation on acupoint more dramatically increased the number of Fos immunoreactive neurons in the spinal cord rather than laser stimulatin on non acupoint. These result suggested that laser stimulatin on acupoint was more effective treatment to activate the spinal neuron than non acupoint stimulation. 3. The local treatment of lidocaine totally suppressed the activity of spinal neurons that were induced by lower power 1aser stimulation. These data indicated that the anti-nociceptive effect of laser stimulation was absolutely dependent upon the peripheral nerve activity in the stimulated location. In conclusion, these data indicate that 10mW of low power laser stimulation into acupoint is capable of inducing the spinal Fos expression in the dorsal horn related to the anti-nociceptive effect of laser stimulation, Furthermore, the induction of spinal Fos expression was totally related to the peripheral nerve activity in the laser stimulated area.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• The Journal of the Petrological Society of Korea
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• v.5 no.2
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• pp.142-160
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• 1996

Petrological and geochemical characteristics of A-type granite were studied from the Namsan and Tohamsan granites in the vicinity of Kyeongju city, southeastern Korea. The Namsan granite consists of hypersolvus alkali-feldspar granite in the northern part and subsolvus alkali-feldspar to biotite granite in the southern part. This hypersolvus granite usually has miarolitic cavities and is characteristically composed of quartz, single homogeneous one-feldspar (alkali feldspar) forming tabular microperthite crystals, or micrographic intergrowth with quartz, and interstitial biotite (Fe-rich annite), alkali amphibole (riebeckitic arfvedsonite) and fluorite. Petrographic and petrochemical characteristics indicate that the hypersolvus granite and subsolvus granite from the Namsan belogn to the A-type and I-type granitoid, respectively. The A-type granite is petrochemically distinguished from the I-type Bulgugsa granites of Late Cretaceous in South Korea, by higher abundance of $SiO_2$, $Na_2O$, $Na_2O+K_2O$, large highly charged cations such as Rb, Nb, Y, Zr, Ga, Th, Ce. U the REEs and Ga/Al ratio, and lower abundance of $TiO_2$, $Al_2O_3$, CaO, $P_2O_5$, MnO, MgO, Ba, Sr, Eu. The total abundance of REEs is 293 ppm to 466 ppm, showing extensively fractionated granitic compositon, and REEs/chondrite normalized pattern shows flat form with strong Eu '-' anomaly ($Eu/Eu^{\ast}$=0.03-0.05). A-type granite from the Namsan area is thought to have been generated late in the magmatic/orogenic cycle after the production of I-type granite and by direct, high-temperature partial melting of melt-depleted, relatively dry tonalitic/granulitic lower crustal material with underplating by mantle-derived basaltic magmas associated with subduction.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.61-68
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• 2005

In this paper, low conversion loss 94 GHz MIMIC resistive mixer was designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC's, was fabricated. The DC characteristics of MHEMT are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 189 GHz and the maximum oscillation frequency(fmax) is 334 GHz. A 94 GHz resistive mixer was fabricated using $0.1{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the 94 GHz resistive mixer was 8.2 dB at an LO power of 10 dBm. P1 dB(1 dB compression point) of input and output were 9 dBm and 0 dBm, respectively. LO-RF isolations of resistive mixer was obtained 15.6 dB at 94.03 GHz. We obtained in this study a lower conversion loss compared to some other resistive mixers in W-band frequencies.

• ETRI Journal
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• v.21 no.1
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• pp.1-27
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• 1999

We present a new description of envelope-function equation of the superlattice (SL). The SL wave function and corresponding effective-mass equation are formulated in terms of a linear combination of Bloch states of the constituent material with smaller band gap. In this envelope-function formalism, we review the fundamental concept on the motion of a wave packet in the SL structure subjected to steady and uniform electric fields F. The review confirms that the average of SL crystal momentums K = ($k_x,k_y,q$), where ($K_x,k_y$) are bulk inplane wave vectors and q SL wave vector, included in a wave packet satisfies the equation of motion = $_0+Ft/h$; and that the velocity and acceleration theorems provide the same type of group velocity and definition of the effective mass tensor, respectively, as in the Bulk. Finally, Schlosser and Marcus's method for the band theory of metals has been by Altarelli to include the interface-matching condition in the variational calculation for the SL structure in the multi-band envelope-function approximation. We re-examine this procedure more thoroughly and present variational equations in both general and reduced forms for SLs, which agrees in form with the proposed envelope-function formalism. As an illustration of the application of the present work and also for a brief investigation of effects of band-parameter difference on the subband energy structure, we calculate by the proposed variational method energies of non-strained $GaAs/Al_{0.32}Ga_{0.68}As$ and strained $In_{0.63}Ga_{0.37}As/In_{0.73}Ga_{0.27}As_{0.58}P_{0.42}SLs$ with well/barrier widths of $60{\AA}/500{\AA}$ and 30${\AA}/30{\AA}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.423-423
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• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.48-53
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• 2007

In this paper, a high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The W-band MIMIC single-balanced mixer was designed using the $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 154 GHz and the maximum oscillation frequency($f_{max}$) of 454 GHz. The designed MIMIC single-balanced mixer was fabricated using $0.1\;{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the single-balanced mixer was 12.8 dB at an LO power of 8.6 dBm. P1 dB(1 dB compression point) of input and output were 5 dBm and -8.9 dBm, respectively. The LO-RF isolations of single-balanced mixer was obtained 37.2 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.