• Korean Journal of Materials Research
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• v.19 no.1
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• pp.44-49
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• 2009

Conjugated nanocrystals using CdSe/ZnS core/shell nanocrystal quantum dots modified by organic linkers and glucose oxidase (GOx) were prepared for use as biosensors. The trioctylphophine oxide (TOPO)-capped QDs were first modified to give them water-solubility by terminal carboxyl groups that were bonded to the amino groups of GOx through an EDC/NHS coupling reaction. As the glucose concentration increased, the photoluminescence intensity was enhanced linearly due to the electron transfer during the enzymatic reaction. The UV-visible spectra of the as-prepared QDs are identical to that of QDs-MAA. This shows that these QDs do not become agglomerated during ligand exchanges. A photoluminescence (PL) spectroscopic study showed that the PL intensity of the QDs-GOx bioconjugates was increased in the presence of glucose. These glucose sensors showed linearity up to approximately 15 mM and became gradually saturated above 15 mM because the excess glucose did not affect the enzymatic oxidation reaction past that amount. These biosensors show highly sensitive variation in terms of their photoluminescence depending on the glucose concentration.

• 한국전자현미경학회:학술대회논문집
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• 2003.05a
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• pp.67-68
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• 2003

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2316-2318
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• 2011

A novel technology has been developed for the synthesis of thioglycolic acid (TGA)-capped CdSe quantum dots (QDs) in aqueous medium. The reaction was carried out in air atmosphere with one-pot by using $SeO_2$ to replace Se or $Na_2Se$. The technological parameters including refluxing time, pH values and molar ratios of selenium to cadmium had significant influence on the luminescence properties of CdSe QDs. Furthermore, the obtained QDs were characterized by fluorescent spectroscopy, X-ray powder diffraction (XRD) and transmission electron microscopy (TEM), respectively. The results demonstrated that the CdSe QDs were of zinc-blended crystal structure in a sphere-like shape.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.362-365
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• 2015

Silica encapsulated ZnSe quantum dots (QDs) were prepared by employing two microemulsion systems: AOT/water/cyclohexane microemulsions containing ZnSe quantum dots with NP5/water/cyclohexane microemulsions containing tetraethylorthosilicate (TEOS). Using this method, cubic zinc blende nanoparticles (3 nm in diameter) were synthesized and encapsulated by silica nanoparticles (20 nm in diameter). The temperature dependence of photoluminescence (PL) for silica-encapsulated ZnSe QDs was investigated to evaluate this material as a temperature sensor media. The fluorescence emission intensity of silica-encapsulated ZnSe nanoparticles (NPs) was decreased with an increase of ambient temperature over the range from $30^{\circ}C$ to $60^{\circ}C$ and a linear relationship between the temperature and the emission intensity was observed. In addition, the temperature dependence of PL intensity for silica-encapsulated ZnSe NPs showed a reversible pattern on ambient temperature. A reversible temperature dependence of the luminescence combined with its insensitivity toward quenching by oxygen due to silica coating established this material as an attractive media for temperature sensor applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.69-72
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• 2020

In this study, the inverted structured electroluminescence (EL) devices were fabricated with double electron transport layers (ETLs). The conduction band minimum (CBM) of TiO₂ NPs is lower than SnO₂ NPs. Therefore, it is expected that inserting TiO₂ NPs between the SnO₂ layer and the emission layer (EML) will reduce the energy barrier and transport electrons smoothly. The quantum dot light emitting diodes (QLEDs) with double ETLs showed the enhanced emission characteristics than those with only SnO₂ layer.

• Ceramist
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• v.21 no.1
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• pp.55-63
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• 2018

Recently, display technology has been focused in regard with with color reproduction, contrast ratio, image resolution and color bit. Among these technologies, the color reproducibliity of White, Red, Green, and Blue is associated with the TV plaform and is expressed as a major technology. Major TV platforms are divided into three categories since 2015, including LCD-based phosphor coverted LED BLU technology, QD sheet technology using nano-sized quantum dots, and OLED technology. In this paper, we describe the color reproducibility definition and background, luminescent materials with wide color gamut, color reproducibility of TV display performance, and discuss about next luminescent materials.

• Journal of the Korean institute of surface engineering
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• v.51 no.5
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• pp.257-262
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• 2018

Cesium lead halide perovskite quantum dots (QDs) have recently emerged as highly promising opto-electronic materials. Despite the relative facile anion exchange reactions in cesium lead halide perovskite QDs, in depth study of the anion exchange reactions such as reaction kinetics are required that can provide insight into the crystal transformation in the cesium lead halide perovskite QDs. Herein, we investigated the anion exchange reaction from $CsPbI_3$ QDs to $CsPbBr_3$ QDs with varying the particle size of the starting $CsPbI_3$ QDs. By characterizing the PL spectra in the anion exchange reaction process, we observed that discontinuous PL peak shifts during I-to-Br anion exchange reaction in starting $CsPbI_3$ QDs over a critical size. Origin of the discontinuous I-to-Br anion exchange kinetics are mainly due to thermodynamically unstable nature of the $CsPb(Br/I)_3$ alloy QDs.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.