• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.158-158
• /
• 2010

본 연구에서는 분자선 박막성장 장비를 (MBE) 이용하여 droplet epitaxy 방법으로 성장시킨 GaAs/AlGaAs 양자점구조의 표면전기장변화에 관하여 photoreflectance spectroscopy (PR)를 이용하였다. 본 실험에 사용된 GaAs/AlGaAs 양자점 구조는 undoped-GaAs (001) 기판을 위에 성장온도 $580^{\circ}C$에서 GaAs buffer layer를 100 nm 성장 후 장벽층으로 AlGaAs을 100 nm 성장하였다. AlGaAs 장벽층을 성장한 후 기판온도를 $300^{\circ}C$로 설정하여 Ga을 3.75 원자층를 (ML) 조사하여 Ga drop을 형성하였다. Ga drop을 GaAs 나노구조로 결정화시키기 위하여 $As_4$를 beam equivalent pressure (BEP) 기준으로 $1{\times}10^{-4}$ Torr로 기판온도 $150^{\circ}C$에서 조사하였다. 결정화 직후 RHEED로 육각구조의 회절 페턴을 관측하여 결정화를 확인하였다. GaAs 나노 구조를 성장한 후 AlGaAs 장벽층을 성장하기위해 10 nm AlGaAs layer는 MEE 방법을 이용하여 $150^{\circ}C$에서 저온 성장 하였으며, 저온성장 후 기판온도를 $580^{\circ}C$로 설정하여 80 nm의 AlGaAs 층을 성장하고 최종적으로 GaAs 10 nm를 capping layer로 성장하였다. 저온성장 과정에서의 결정성의 저하를 보상하기위하여 MBE 챔버내에서 $650^{\circ}C$에서 열처리를 수행하였다. GaAs/AlGaAs 양자점의 광학적 특성은 photoluminescence를 이용하여 평가 하였으며 780 nm 근처에서 발광을 보여 주었다. 특히 PR 실험으로부터 시료의 전기장에 의한 Franz-Keldysh oscillation (FKO)의 변화를 관측하여 GaAs/AlGaAs 양자점의 존재에 의한 시료의 표면에 형성되는 표면전기장을 측정하였다. 또한 시료에 형성된 전기장의 세기를 계산하기위해 PR 신호로부터 fast Fourier transformation (FFT)을 이용하였다. 특히 온도의 존성실험을 통하여 표면전기장의 변화를 관측 하였으며 양자구속효과와 관련성에 대하여 고찰 하였다.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.208-212
• /
• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.517-522
• /
• 2002

In this study, the effect of the processing parameters in PVD process on the size and the distribution of deposited Si quantum dots was quantitatively investigated by computational simulation utilizing Monte Carlo method. The processing parameters, substrate temperature, deposition time, gas pressure and target-substrate distance were selected as variables since those parameters are often selected as variables in PVD experiments. It is predicted that the density of $1{\times}10^{12}cm^{-2}$ Si quantum dots can be deposited on the substrate when the deposition rate is 0.05 nm/sec at the substrate temperature of 490${\circ}$, deposition time of 7 sec, gas pressure of 3 mTorr and target-substrate distance of 8 cm.

• Journal of the Korean Vacuum Society
• /
• v.15 no.5
• /
• pp.493-498
• /
• 2006

Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.

• Membrane Journal
• /
• v.30 no.5
• /
• pp.293-306
• /
• 2020

Increasing harmful effects of climate change, such as its effect on water scarcity, has led to a focus on developing effective water purification methods to obtain pure water. Additionally, rising levels of water pollution is increasing levels of environmental degradation, calling for sources of water treatment to remove contaminants. To purify water, osmotic processes across a semipermeable membrane can take place, and recent studies are showing that incorporating nanoparticles, including carbon quantum dots (CQDs), graphene carbon dots (GQDs), and graphene oxide quantum dots (GOQDs) are making thin film composite (TFC) membranes more effective by increasing water flux while maintaining similar levels of salt rejection, increasing the hydrophilicity of the membrane surface, showing bactericidal properties, exhibiting antifouling properties to prevent accumulation of bacteria or other microorganisms from reducing the effectiveness of the membrane, and more. In the review, the synthesis process, applications, functionality, properties, and the role of several types of quantum dots are discussed in the composite membrane for water purification.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.217-223
• /
• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.216-222
• /
• 2006

In this paper, we investigated the effect of hydrogen-plasma (H-plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5-stacked InAs dots in an InGaAs/GaAs well structure and $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) current blocking layer. It has been observed that H-plasma treatment didn't affect the band structure of QDIP. It has been also observed that the H-plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in $Al_{0.3}Ga_{0.7}As/GaAs$ SL but also introduce defects in QDIP structure. The H-plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo-current (PC) of QDIP whose PC was not detectable without the H-plasma treatment due to the high dark current.

• Journal of the Korean Vacuum Society
• /
• v.18 no.4
• /
• pp.266-271
• /
• 2009

We have investigated the lasing characteristics of GaAs-based 1300 nm wavelength region InAs Quantum Dot Laser Diode grown by Migration Enhanced Molecular Beam Epitaxy. Under a pulsed and CW operation, we observed the state switching of lasing wavelength from ground state (1302 nm) to excited state (1206 nm) due to the gain saturation of ground state. Under a pulsed operation, $J_{th}=92A/cm^2$, $\lambda_L=1311\;nm$ and under a CW operation, $J_{th}=247A/cm^2$, $\lambda_L=1320\;nm$.

• Analytical Science and Technology
• /
• v.28 no.1
• /
• pp.33-39
• /
• 2015

CdS-QD particles are a nano-sized semiconducting crystal that emits light. Their optical properties show great potential in many areas of applications such as disease-diagnostic reagents, optical technologies, media industries and solar cells. The wavelength of emitting light depends on the particle size and thus the quality control of CdS-QD particle requires accurate determination of the size distribution. In this study, CdS-QD particles were synthesized by a simple ${\gamma}$-ray irradiation method. As a particle stabilizer polyvinyl pyrrolidone (PVP) were added. In order to determine the size and size distribution of the CdS-QD particles, sedimentation field-flow fractionation (SdFFF) was employed. Effects of carious parameters including the the flow rate, external field strength, and field programming conditions were investigated to optimize SdFFF for analysis of CdS-QD particles. The Transmission electron microscopy (TEM) analysis show the primary single particle size was ~4 nm, TEM images indicate that the primarty particles were aggregated to form secondary particles having the mean size of about 159 nm. As the concentration of the stabilizer increases, the particle size tends to decrease. Mean size determined by SdFFF, TEM, and dynamic light scattering (DLS) were 126, 159, and 152 nm, respectively. Results showed SdFFF may become a useful tool for determination of the size and its distribution of various types of inorganic particles.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.1
• /
• pp.25-28
• /
• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.