• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.316-318
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• 2003

양자우물 구조를 사용한 HEMT(High Electron Mobility Transistor)는 고속 스위칭 소자와 초고주파 통신용 소자 및 센서에에 우수한 동작특성을 갖고 있다. 본 논문에서는 AlInAs/InP HEMT의 heterostructure를 파동방정식과 Poisson 방정식을 self-consistent 한 방법으로 해석하였다. 파동방정식으로 junction의 전자농도를 계산하고, Poisson 방정식을 해석하여 potential profile에 의한 전자 농도가 heterostructure에서 self-consistent가 되도록 연산하였다. 끝으로 AlInAs/InP 구조에서 positively ionized donor, valance band에서의 hole, conduction band의 free electron과 구조내의 2DEG를 AlGaAs/GaAs 및 AlGaAs/InGaAs/GaAs와 비교하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.401-404
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• 1998

Recently, InGaP/GaAs HBTs have been much interested as a potential replacement for AlGaAs/GaAs HBTs because of their superior device and material properties. In this paper, DC characteristics of InGaP/GaAs HBTs and the temperature dependance as well as the reliability were investigated comparing with AlGaAs/GaAs HBTs. As a results InGaP/GaAs HBTs produced the superior performance to AlGaAs/GaAs HBTs.

• 수산해양기술연구
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• 제39권2호
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• pp.152-157
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• 2003

Most Recently, with rapid development in marine industries such as marine structures and ship, there occurs much interest in the study of corrosion characteristics which play an important role in design of cooling water system like heat-exchanger. Especially, as operating environment of fresh cooling water system in vessels is acidified, this system is seriously corroded. In this study, to study on the corrosion characteristics of Al-alloy shell for cooler, the electrochemical polarization test of materials for the marine fresh water cooler such as Al-alloy, Cu and naval brass was carried out in fresh water. And thus the polarization resistance and anodic polarization behavior of Al-alloy, Cu and naval brass are investigated. Also, galvanic corrosion characteristics of Al-alloy coupled with Cu and naval brass is considered. The main results obtained are as follows ; (1) The current density of corrosion is high in order of Al-alloy > naval brass > Cu (2) As anodic potential increases, the corrosion resistance of naval brass is better than that of Cu. (3) The galvanic corrosion of Al-alloy coupled with Cu and naval brass is activated than corrosion of Al-alloy.

• 대한전자공학회논문지SD
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• 제48권11호
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• pp.1-8
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• 2011

트랜지스터의 최대 출력 성능을 제한하는 요소 중 가장 중요한 하나가 항복 전압이다. GaAs 기판 위에 점진적으로 성장된 메타몰픽(Metamorphic) InAlAs/InGaAs HEMTs(MHEMT)는 InP 기판 위에 성정한 HEMT에 비해 비용 측면에서 특히 장점을 가지고 있다. 그러나 GaAs 나 InP 기반의 HEMT 소자들은 모두 우수한 마이크로파 및 밀리미터파 주파수 특성 및 이에 따른 저잡음 특성에 비해 낮은 항복전압으로 인해 파워 소자로서는 중간출력 정도의 소자로서만 사용 가능하다. 이러한 HEMT 소자의 항복 전압을 개선하기 위하여 본 논문에서는 InAlAs/$In_xGa_{1-x}As$/GaAs MHEMT 소자들의 항복 특성을 시뮬레이션하고 분석하였다. 2차원 소자 시뮬레이터의 hydrodynamic 전송 모델을 사용하여 $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ 이종접합 구조를 갖는 제작된 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT 소자에 대하여 파라미터 보정 작업을 수행한 후 항복 특성에 영향을 주는 요소들을 분석하였다. 깊은 준위 트랩 효과를 고려한 충돌 이온화 및 게이트 전계를 분석하였고, 인듐(In) 몰 성분 변화에 따른 $In_xGa_{1-x}As$ 채널에서의 항복 특성 예측을 위한 충돌 이온화 계수를 경험적으로 제안 적용하였다.

• 한국주조공학회지
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• 제20권2호
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• pp.89-96
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• 2000

The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

• 한국재료학회지
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• 제10권10호
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• pp.698-702
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• 2000

$Al_{0.24}Ga_{0.76}As/GaAs$ 다중 양자우물 구조의 고아 흡수 특성을 표면 광전압 방법을 사용하여 연구하였다. SPV 측정결과 1.42eV 부근에서 두 개의 신호가 나탔으며, 이는 화학적 에칭으로 GaAs 기판의 신호와 GaAs 완충층과 관련된 신호임을 확인 할 수 있었다. $Al_{0.24}Ga_{0.76}As$와 관련된 전이 에너지를 관찰하고, Kuech 등이 제안한 조성식을 이용하여 Al 조성(x=24%)을 결정하였다. 그리고 다중 양자우물에서 나타나는 전이 에너지 값들은 envelope-weve function approximation(EFA)로 계산한 이론치와 잘 일치하였다. 입사광의 세기에 따라 광 전압이 선형적으로 변한다는 것을 알 수 있었고, 온도가 감소함에 따른 전이 에너지의 변화를 관찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.158-158
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• 2010

본 연구에서는 분자선 박막성장 장비를 (MBE) 이용하여 droplet epitaxy 방법으로 성장시킨 GaAs/AlGaAs 양자점구조의 표면전기장변화에 관하여 photoreflectance spectroscopy (PR)를 이용하였다. 본 실험에 사용된 GaAs/AlGaAs 양자점 구조는 undoped-GaAs (001) 기판을 위에 성장온도 $580^{\circ}C$에서 GaAs buffer layer를 100 nm 성장 후 장벽층으로 AlGaAs을 100 nm 성장하였다. AlGaAs 장벽층을 성장한 후 기판온도를 $300^{\circ}C$로 설정하여 Ga을 3.75 원자층를 (ML) 조사하여 Ga drop을 형성하였다. Ga drop을 GaAs 나노구조로 결정화시키기 위하여 $As_4$를 beam equivalent pressure (BEP) 기준으로 $1{\times}10^{-4}$ Torr로 기판온도 $150^{\circ}C$에서 조사하였다. 결정화 직후 RHEED로 육각구조의 회절 페턴을 관측하여 결정화를 확인하였다. GaAs 나노 구조를 성장한 후 AlGaAs 장벽층을 성장하기위해 10 nm AlGaAs layer는 MEE 방법을 이용하여 $150^{\circ}C$에서 저온 성장 하였으며, 저온성장 후 기판온도를 $580^{\circ}C$로 설정하여 80 nm의 AlGaAs 층을 성장하고 최종적으로 GaAs 10 nm를 capping layer로 성장하였다. 저온성장 과정에서의 결정성의 저하를 보상하기위하여 MBE 챔버내에서 $650^{\circ}C$에서 열처리를 수행하였다. GaAs/AlGaAs 양자점의 광학적 특성은 photoluminescence를 이용하여 평가 하였으며 780 nm 근처에서 발광을 보여 주었다. 특히 PR 실험으로부터 시료의 전기장에 의한 Franz-Keldysh oscillation (FKO)의 변화를 관측하여 GaAs/AlGaAs 양자점의 존재에 의한 시료의 표면에 형성되는 표면전기장을 측정하였다. 또한 시료에 형성된 전기장의 세기를 계산하기위해 PR 신호로부터 fast Fourier transformation (FFT)을 이용하였다. 특히 온도의 존성실험을 통하여 표면전기장의 변화를 관측 하였으며 양자구속효과와 관련성에 대하여 고찰 하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.516-521
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• 2013

This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.

• Journal of Welding and Joining
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• 제18권3호
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• pp.51-59
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• 2000

Sink roll has been used in molten 55%Al-Zn alloy bath of continuous galvanizing line for sinking and stabilizing working steel strip in molten metal bath. In the process, the sink roll body inevitably build up dross compounds and pitting on the sink roll surface during 55%Al-Zn alloy coated strip production, and the life time of the sink roll is shorten by build up dross compounds and pitting. The present study examined the application of thermally sprayed ceramic coatings method on sink roll body for improving erosion resistance at molten 55% Al-Zn pool. In this experiment, the stainless steels such as STS 316L and STS 430F were used as the substrate materials. The CoNiCr and WE-Co powder were selected as bond coating materials. Moreover $Al_2O_3-ZrO_2-SiO_2 and ZrO_2-SiO_2$ powders selected as the top coating materials. Appearances of the specimens before and after dipping to molten 55%Al-Zn pool were compared and analyzed. As a result of this study, STS430F of substrate, WC-Co of bond spray coatings, $ZrO_2-SiO_2$ power of top spray coatings is the best quality in erosion resistance test at molten 55%Al-Zn pool

• Advances in materials Research
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• 제1권1호
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• pp.51-74
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• 2012

A powder metallurgy-based rapid consolidation technique, Plasma Pressure Compaction ($P^2C^{(R)}$), was utilized to produce near-net shape parts of gamma titanium aluminides (${\gamma}$-TiAl). Micron-sized ${\gamma}$-TiAl powders, composed of Ti-50%Al and Ti-48%Al-2%Cr-2%Nb (at%), were rapidly consolidated to form near-net shape ${\gamma}$-TiAl parts in the form of 1.0" (25.4 mm) diameter discs, as well as $3"{\times}2.25"$ ($76.2mm{\times}57.2mm$) tiles, having a thickness of 0.25" (6.35 mm). The ${\gamma}$-TiAl parts were consolidated to near theoretical density. The microstructural morphology of the consolidated parts was found to vary with consolidation conditions. Mechanical properties exhibited a strong dependence on microstructural morphology and grain size. Because of the rapid consolidation process used here, grain growth during consolidation was minimal, which in turn led to enhanced mechanical properties. Consolidated ${\gamma}$-TiAl samples corresponding to Ti-48%Al-2%Cr-2%Nb composition with a duplex microstructure (with an average grain size of $5{\mu}m$) exhibited superior mechanical properties. Flexural strength, ductility, elastic modulus and fracture toughness for these samples were as high as 1238 MPa, 2.3%, 154.58 GPa and 17.95 MPa $m^{1/2}$, respectively. The high temperature mechanical properties of the consolidated ${\gamma}$-TiAl samples were characterized in air and vacuum and were found to retain flexural strength and elastic modulus for temperatures up to $700^{\circ}C$. At high temperatures, the flexural strength of ${\gamma}$-TiAl samples with Ti-50%Al composition deteriorated in air by 10% as compared to that in vacuum. ${\gamma}$-TiAl samples with Ti-48%Al-2%Nb-2%Cr composition exhibited better if not equal flexural strength in air than in vacuum at high temperatures.