• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.139-142
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• 2017

In this paper, InP-based InGaAs/InAlAs quantum cascade lasers(QCLs) providing nearly zero emission wavelength mismatch between the measured emission wavelength and the designed transition wavelength of QCLs is presented. The zero emission wavelength mismatch of QCLs influenced by both the accurate compositions and thicknesses of the low-pressure metal-organic vapor-phase epitaxy(MOVPE) grown InGaAs and InAlAs layers throughout the core and the abrupt composition transitions between InGaAs and InAlAs layers. The abrupt interfaces between InGaAs and InAlAs layers have been achieved throughout the core structure by means of controlling individually purged vent/run valves of a closed coupled showerhead reactor. In addition, maintaining substrate temperature constant during InGaAs/InAlAs core growth was a partial factor of uniformity improvement of QCLs. These approaches for reducing the possible discrepancies between the designed and MOVPE grown epitaxial structures could lead to improvement of QCL performance.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.808-816
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• 1990

The thermal behavior of transformation and characteristics of seeded sample powders prepared by simultaneous $\alpha$-Al2O3 seed addition with water on the Al-sec-butoxide hydrolysis were studied. $\alpha$-Al2O3 seed particles are shown to act as nuclei for transformation of $\theta$-to $\alpha$-Al2O3 and to result in an increase in thetransformation kinetics and lowering of the transformation temperature by as much as 143$^{\circ}C$. Simultaneous seed addition on the hydrolysis resulted in uniform dispersin and creation of nucleation site on seed surface and only 0.1wt% seeding lowered the transformation temperature by as much as 115$^{\circ}C$. For 3wt% seed addition, $\alpha$-Al2O3 single phase was obtained at 95$0^{\circ}C$ for 100 minutes and the specific surface area of products were lowered to 11.9$m^2$/g as compared with that of $\alpha$-Al2O3 powder prepared without seed at 115$0^{\circ}C$ ; 15.1$m^2$/g due to depression of vermicular structure growth.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.43-46
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• 1998

We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

• Korean Journal of Soil Science and Fertilizer
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• v.37 no.5
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• pp.329-335
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• 2004

Acid deposition in forest adjacent to the industrial complexes causes soil acidification resulting in the leaching of cations, decreases of buffering capacity and increases of toxic metal concentrations such as Al, Fe, Mn and Cu in soil solution. Changes of nutrient availability equilibria by acid deposition have been known to retard the growth of pine trees. Objective of this research was to assess the critical ratios of Ca/Al and Mg/Al limiting the growth of Pinus thunbergii in the hydroponic culture. The Ca concentration and Ca/Al ratio in stalks of pine tree were increased as increasing Ca/Al molar ratio in the nutrient solution, but were not changed when the Ca/Al molar ratio was adjusted to greater than 1. Growth of Pinus thunbergii was inhibited at the Ca/Al molar ratio lower than l due to the Ca deficiency. The molar ratios of Ca/Al in the needles of Pinus thunbergii showed the similar tendency with the stalks. This indicated that Ca/Al molar ratio of 1 in the growth media was the critical level limiting the growth of Pinus thunbergii. Concentration of Mg and Mg/Al molar ratios in the stalks of pine tree were increased as increasing Mg/Al molar ratio in nutrient solution. Molar ratios of Mg/Al in the needles were increased as increasing Mg/Al ratios in nutrient solution up to 0.83, which was the critical level limiting the growth of Pinus thunbergii.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.39 no.4
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• pp.291-297
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• 2003

Al-brass is usually used as the tube material of vessel's heat exchanger for seawater cooling system because it has high thermal conductivity and good mechanical properties and high corrosion resistance due to cuprous oxide (Cu20) layer against seawater. However, Al-brass tubes of heat exchanger for vessel at the actual environment is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment In this paper, the effect of corrosion environment on the stress corrosion cracking of Al-brass in various NH4OH of 3.5% NaCl solution, under flow by constant displacement tester. Based on the test results, the behavior of polarization, stress corrosion crack propagation and dezincification phenomenon of Al-brass are investigated. The main results are as follows：(1) Increasing range of potential from open circuit potential to repassivation gets lower, as the contain rate of NH4OH gets higher. (2) As contain rate of NH4OH gets higher, SCC of Al-brass is become activation but the protection film(Cu20) of Al-brass is created in 3.5% NaCl solution. (3) According as content of NH4OH increases in 3.5% NaCl solution, the dezincifiction area is spread. It is concluded that dezincification occurred by localized preferential anodic dissolution at stress focusing region.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.419-430
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• 1992

Fabrication possibility of low-shrinkage alumina without oxidation and wetting agent was presented on the basis of observation about oxidation behavior, microstructure and physical characteristics of such reaction agents free Al2O3-Al system. The composition less than Al 10w/o where Al can act as a sintering agent for Al2O3 was excluded. Under the condition of present experiments oxidation of Al2O3-Al system was dependent not on holding time but mainly on oxidation temperature. In thes case of Al powder not comminuted effectively during powder mixing of Al2O3-Al, columnar structure which would act as a hindrance to the densification during sintering developed more during oxidation with higher Al contents, and which made the fabrication of low-shrinkage Al2O3 ceramics impossible. If Al powder was comminuted effectively due to co-mixed Al2O3 characteristics, densification was improved because of no columnar structure and made the fabrication of sintered body with -2.7% dimensional change and 81% relative density possible. As a result, it is possible to fabricate dense low-shrinkage Al2O3 ceramics without oxidation and wetting agent under conditions such as smaller particle size of Al, Al contents below 50v/o, higher green density of Al2O3-Al compact and the use of Al2O3 powder used for high-density ceramics.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.