• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1267-1275
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• 1996

Green sheet was prepared by tape casting in the composition of (1-x)Pb(Mg1/3Nb2/3)O3-PbTiO3 system using Pb(Mg1/3Nb2/3)O3 and PbTiO3 synthesized with PbO, Nb2O5 MgO and TiO2 The densest green sheet was obtained in the weight ratio 70:30 of powder to binder. Green sheet wasmultilayered in metal mould and formed into lamination at 7$0^{\circ}C$, 300kg/cm2 The lamination was sintered at 110$0^{\circ}C$ 2hr, Dielectric constant and Curie temperature of disc type sintered body was highered with increasing the amount of PbTiO3 and was in the range of 19000-21000, -7~45$^{\circ}C$ respectively. Green and sintered relative density of lamination was 61% and 95% respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.658-664
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• 1997

The effect of metal oxides($K_2O, MgO, CaO,Al_2O_3$, and $TiO_2$) on the kinds of pure $SiO_2$ phase, and $SiO_2$ phases in the composition of vitreous porcelain body was investigated. Also, the effect of the ratio $SiO_2$ to $Al_2O_3$ in the composition of porcelain body with stabilized of cristobalite phase was investigated. In the case of the addition of $K_2O, MgO, CaO, Al_2O_3$, and $TiO_2$ to pure $SiO_2$, the major phase was $\alpha$-cristobalite, $\alpha$-cristobalite, $\alpha$-quartz, $\alpha$-quartz and amorphous, respectively. As the ratio of $SiO_2$ to $Al_2O_3$ in the composition of porcelain body was decreased, the stabilization of cristobalite phase was promoted and only the critical value of $SiO_2/Al_2O_3$ ratio that stabilizing the cristobalite phase in it was 68.10/22.75. The addition of $K_2$O, MgO, CaO,Al_2O_3$, and $TiO_2$ to the composition of porcelain body stabilized already did not affect on the formation of $\alpha$-cristobalite phase which degraded the thermal properties of porcelain body, and suppressed the formation of a, $\beta$-cristobalite.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.361-368
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• 1990

The properties of the powder of ZrO2＋3m/o Y2O3 system prepared by co-precipitation method at the pH values of 7, 9, 10 and 11 were investigated. ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Zirconium hydroxide near by Zr(OH)4 structure showed more excellent crystallinity and lower formation temperature of tetragonal ZrO2. In the range of this study, cubic ZrO2 was not formed and stability of tetragonal ZrO2 prepared in the conditiion of pH 7 was most excellent. Average particle sizes and specific surface areas of tetragonal ZrO2 powders, prepared as calcining amorphous zirconium hydroxides at $600^{\circ}C$ for 1h, were 0.6-0.8${\mu}{\textrm}{m}$ and 45-70$m^2$/g, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.422-425
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• 2001

The electrical properties of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-La$_2$O$_3$ based varistors were investigated with sintering temperature in the range of 1240~130$0^{\circ}C$. The varistors sintered at 1240~126$0^{\circ}C$ exhibited high density, which was 5.50~5.70 g/㎤ corresponding to 95.2~98.6% of theoretical density The varistor voltage was decreased in range of 718.47~108.00 V/mm with increasing sintering temperature. The varistors sintered at 1240~126$0^{\circ}C$ exhibited good electrical properties, in which the nonlinear exponent is in the range of 79.25~49.22 and leakage current is in the range of 0.26~1.00 $\mu$A. In particular, the varistor sintered at 1240\`c showed very excellent electrical properties, in which the nonlinear exponent is 79.25 and leakage current is 0.26 $\mu$A.A.A.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.42-52
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$ $HfO_2$. Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mechanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({ imes}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack(mc) and lateral crack(lc) under surface at the edge of indentation mark. Fracture toughness of Al2O3-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• Journal of the Korean Ceramic Society
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• v.11 no.3
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• pp.19-26
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• 1974

Mechanical properties of the system PbO-B2O3-V2O5 low melting glass during crystallization by heat-treatment were investigated. Wettability of the system PbO-B2O3-V2O5 was excellent and appropriate for commercial sealing as a low melting solder glass. Crystals, during heat-treated at 30$0^{\circ}C$ of the system PbO-B2O3-V2O5 were $\beta$-4PbO.B2O3, 5PbO.4B2O3, and Pb2V2O7 mainly. The percent of crystallinity was 82$\pm$5%. Mechanical properties of the system PbO-B2O3-V2O5 were influenced not only by the differences of density and coefficient of thermal expansion and the stress induced from the difference in the density and coefficient of thermal expansion between glass phase and crystals but also crystallization conditions.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.620-625
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• 2012

A general synthetic method to make $Fe_3O_{4-{\delta}}$ (activated magnetite) is the reduction of $Fe_3O_4$ by $H_2$ atmosphere. However, this process has an explosion risk. Therefore, we studied the process of synthesis of $Fe_3O_{4-{\delta}}$ depending on heat-treatment conditions using $FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. The thermal decomposition characteristics of $FeC_2O_4{\cdot}2H_2O$ and the ${\delta}$-value of $Fe_3O_{4-{\delta}}$ were analyzed with TG/DTA in Ar atmosphere. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was synthesized by precipitation method using $FeSO_4{\cdot}7H_2O$ and $(NH_4)_2C_2O_4{\cdot}H_2O$. The concentration of the solution was 0.1 M and the equivalent ratio was 1.0. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed to $H_2O$ and $FeC_2O$4 from $150^{\circ}C$ to $200^{\circ}C$. $FeC_2O4$ was decomposed to CO, $CO_2$, and $Fe_3O_4$ from $200^{\circ}C$ to $250^{\circ}C$. Single phase $Fe_3O_4$ was formed by the decomposition of ${\beta}-FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. However, $Fe_3C$, Fe and $Fe_4N$ were formed as minor phases when ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed in $N_2$ atmosphere. Then, $Fe_3O_4$ was reduced to $Fe_3O_{4-{\delta}}$ by decomposion of CO. The reduction of $Fe_3O_4$ to $Fe_3O_{4-{\delta}}$ progressed from $320^{\circ}C$ to $400^{\circ}C$; the reaction was exothermic. The degree of exothermal reaction was varied with heat treatment temperature, heating rate, Ar flow rate, and holding time. The ${\delta}$-value of $Fe_3O_{4-{\delta}}$ was greatly influenced by the heat treatment temperature and the heating rate. However, Ar flow rate and holding time had a minor effect on ${\delta}$-value.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.